©2008 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FCA20N60F Rev. A1
FCA20N60F 600V N-CHANNEL FRFET
FCA20N60F
600V N-CHANNEL FRFET
Features
•650V @T
J = 150°C
Typ. Rds(on)=0.15Ω
Fast Recovery Type ( trr = 160ns )
Ultra low gate charge (typ. Qg=75nC)
Low effective output capacitance (typ. Coss.eff=165pF)
100% avalanche tested
Description
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
GSDTO-3PN
FCA Series
Symbol Parameter FCA20N60F Unit
VDSS Drain-Source Voltage 600 V
IDDrain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) 20
12.5 A
A
IDM Drain Current - Pulsed (Note 1) 60 A
VGSS Gate-Source voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ
IAR Avalanche Current (Note 1) 20 A
EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns
PDPower Dissipation (TC = 25°C)
- Derate above 25°C208
1.67 W
W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 °C
Symbol Parameter FCA20N60F Unit
RθJC Thermal Resistance, Junction-to-Case 0.6 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 40 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
RoHS Compliant
December 2008
SuperFET
TM
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FCA20N60F Rev. A1
FCA20N60F 600V N-CHANNEL FRFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 20A, di/dt 1200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FCA20N60F FCA20N60F TO-3PN -- -- 30
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C600 -- -- V
VGS = 0V, ID = 250μA, TJ = 150°C-- 650 -- V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250μA, Referenced to 25°C-- 0.6 -- V/°C
BVDSS Drain-Source Avalanche Breakdown
Voltage VGS = 0V, ID = 20A -- 700 -- V
IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C--
-- --
-- 10
100 μA
μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10V, ID = 10A -- 0.15 0.19 Ω
gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) -- 17 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V,
f = 1.0MHz -- 2370 3080 pF
Coss Output Capacitance -- 1280 1665 pF
Crss Reverse Transfer Capacitance -- 95 -- pF
Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF
Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300V, ID = 20A
RG = 25Ω
(Note 4, 5)
-- 62 135 ns
trTurn-On Rise Time -- 140 290 ns
td(off) Turn-Off Delay Time -- 230 470 ns
tfTurn-Off Fall Time -- 65 140 ns
QgTotal Gate Charge VDS = 480V, ID = 20A
VGS = 10V
(Note 4, 5)
-- 75 98 nC
Qgs Gate-Source Charge -- 13.5 18 nC
Qgd Gate-Drain Charge -- 36 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 20 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 20A
dIF/dt =100A/μs (Note 4) -- 160 -- ns
Qrr Reverse Recovery Charge -- 1.1 -- μC
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FCA20N60F Rev. A1
FCA20N60F 600V N-CHANNEL FRFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 100101
100
101
102
V GS
Top : 15.0 V
10 .0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250μs P ulse Test
2. TC = 25oC
ID, Drain Current [A]
VDS, Drain-Source Voltage [V] 246810
100
101
102
* Note:
1. VDS = 40V
2. 250μs Pulse Test
-55oC
150oC
25oC
ID , Drain Current [A]
VGS , Gate-Source Voltage [V]
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
0.0
0.1
0.2
0.3
0.4
VGS = 20V
VGS = 10V
* Note : TJ = 25oC
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
100
101
102
25oC
150oC
* Notes :
1. VGS = 0V
2. 25 0 μs Pulse Test
IDR , Reverse Drain Current [A]
VSD , Source-Drain Voltage [V]
10-1 100101
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 1020304050607080
0
2
4
6
8
10
12
VDS = 250V
VDS = 100V
VDS = 400V
* Note : ID = 20A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [n C]
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FCA20N60F Rev. A1
FCA20N60F 600V N-CHANNEL FRFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9-1. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Note s :
1. VGS = 0 V
2. ID = 250 μA
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC] -100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. VGS = 10 V
2. ID = 20 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
100101102103
10-2
10-1
100
101
102Operation in This Area
is Limited by R DS(on)
DC 10 ms
1 ms
100 μs
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. S in g le Pulse
ID, Drain Current [A]
VDS, Drain-Source Vo ltage [V]
25 50 75 100 125 150
0
5
10
15
20
25
ID, Drain Current [A ]
TC, Case Temperature [ oC]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
* N otes :
1 . Z θJC(t) = 0 .6oC/W Max.
2 . Duty F a c to r , D=t1/t2
3 . T JM - T C = PDM * Z θJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC(t), Thermal Response
t1, S q u a re Wa v e P u ls e Du ra tio n [s e c]
t
1
P
DM
t
2
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FCA20N60F Rev. A1
FCA20N60F 600V N-CHANNEL FRFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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FCA20N60F Rev. A1
FCA20N60F 600V N-CHANNEL FRFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
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FCA20N60F Rev. A1
FCA20N60F 600V N-CHANNEL FRFET
Mechanical Dimensions TO-3PN
Dimensions in Millimeters
Rev. I37
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tm
®
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FCA20N60F Rev. A1
FCA20N60F 600V N-CHANNEL FRFET