STTH12002TV1 - STMicroelectronics

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STTH12002TV

February 2004 - Ed: 1

HIGH EFFICIENCY ULTRAFAST DIODE

IF(AV) 2x60A

VRRM 200 V

Tj (max) 150 °C

VF(typ) 0.73 V

trr (typ) 35 ns

MAIN PRODUCT CHARACTERISTICS

ISOTOP

STTH12002TV1

Dual center tap rectifier suited for welding

equipment and high power industrial application.

Packaged in ISOTOP, this device is intended for

use in the secondary rectification of power

converters.

DESCRIPTION

■Suited for welding and high power equipment

■Very low forward losses

■Low recovery times

■High surge current capability

■Insulated:

Insulating voltage = 2500 VRMS

Capacitance < 45 pF

■Low leakage current

FEATURES AND BENEFITS

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 200 V

IF(RMS) RMS forward current Per diode 100 A

IF(AV) Average forward current δ=0.5 Tc = 105°C Per diode 60 A

IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal per diode 700 A

Tstg Storage temperature range - 55 + 150 °C

Tj Maximum operating junction temperature 150 °C

ABSOLUTE RATINGS (limiting values, per diode)

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Symbol Parameter Tests conditions Min. Typ. Max. Unit

IR*Reverse leakage

current

Tj = 25°C VR=V

RRM 50 µA

Tj = 125°C 50 500

VF** Forward voltage drop Tj = 25°C IF=60A 1.05 V

Tj = 25°C IF= 120 A 1.15

Tj = 150°C IF=60A 0.73 0.82

Tj = 150°C IF= 120 A 0.98

Pulse test: * tp = 5ms, δ<2%

** tp = 380µs, δ<2%

To evaluate the maximum conduction losses use the following equation :

P = 0.66 x IF(AV) + 0.00266 IF2(RMS)

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

trr Reverse

recovery time

Tj = 25°C IF=1A V

R= 30V

dIF/dt = 200 A/µs

35 43 ns

IRM Reverse

recovery current

Tj = 125°C IF=60A V

R= 160V

dIF/dt = 200 A/µs

10.4 13.5 A

tfr Forward

recovery time

Tj = 25°C IF=60A dI

F/dt = 200 A/µs

VFR = 1.1 x VFmax

560 ns

VFP Forward

recovery voltage

Tj = 25°C IF=60A dI

F/dt = 200 A/µs 2.5 V

DYNAMIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Maximum Unit

Rth (j-c) Junction to case Per diode 0.76 °C/W

Per device 0.43

Rth (j-c) Coupling 0.1 °C/W

When the diodes 1 and 2 are used simultaneously:

∆Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

THERMAL PARAMETERS

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100

150

200

250

300

350

400

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

I(A)

δ=tp/T tp

P = 40W

P = 60W

P = 80W

Fig. 1: Peak current versus duty cycle (per diode).

100

120

140

160

180

200

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

V (V)

I (A)

T =150°C

T =25°C

Fig. 2-1: Forward voltage drop versus forward

current (typical values, per diode).

0.1

1.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Z/R

th(j-c) th(j-c)

Single pulse

t(s)

Fig. 3: Relative variation of thermal impedance

junction to case versus pulse duration.

100

1000

0 50 100 150 200

C(pF)

V (V)

F=1MHz

V =30mV

T =25°C

OSC RMS

Fig. 4: Junction capacitance versus reverse

voltage applied (typical values, per diode).

100

150

200

250

300

350

400

450

500

550

600

650

10 100 1000

Q (nC)

dI /dt(A/µs)

I =60A

V =160V

T =125°C

T =25°C

Fig. 5: Reverse recovery charges versus dIF/dt

(typical values, per diode).

100

120

140

160

180

200

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

I (A)

V (V)

T =150°C

T =25°C

Fig. 2-2: Forward voltage drop versus forward

current (maximum values, per diode).

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100

10 100 1000

t(ns)

dI /dt(A/µs)

T =25°C

T =125°C

I =60A

V =160V

Fig. 6: Reverse recovery time versus dIF/dt

(typical values, per diode).

10 100 1000

I(A)

dI /dt(A/µs)

T =25°C

T =125°C

I =60A

V =160V

Fig. 7: Peak reverse recovery current versus dIF/dt

(typical values, per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

25 50 75 100 125 150

IRM

Qrr

T (°C)

rr I [T ]/Q ;I [T =125°C]

RM j rr RM j

I =60A

V =160V

Fig. 8: Dynamic parameters versus junction

temperature.

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-

thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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All other names are the property of their respective owners.

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PACKAGE MECHANICAL DATA

ISOTOP

O P

G2 E

C2 C

E1 G1

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004

E1 23.85 24.15 0.939 0.951

E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594

G1 12.60 12.80 0.496 0.504

G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

Ordering code Marking Package Weight Base qty Delivery mode

STTH12002TV1 STTH12002TV1 ISOTOP 27 g

(without screws)

(with screws)

Tube

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