Product Folder Sample & Buy Support & Community Tools & Software Technical Documents LM2767 SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 LM2767 Switched Capacitor Voltage Converter 1 Features 3 Description * * * * The LM2767 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of 1.8 V to 5.5 V. Two low-cost capacitors and a diode are used in this circuit to provide at least 15 mA of output current. 1 Doubles Input Supply Voltage SOT-23 5-Pin Package 20- Typical Output Impedance 96% Typical Conversion Efficiency at 15 mA 2 Applications * * * * * * Cellular Phones Pagers PDAs, Organizers Operational Amplifier Power Suppliers Interface Power Suppliers Handheld Instruments The LM2767 operates at 11-kHz switching frequency to avoid audio voice-band interference. With an operating current of only 40 A (operating efficiency greater than 90% with most loads), the LM2767 provides ideal performance for battery-powered systems. The device is manufactured in a 5-pin SOT-23 package. Device Information(1) PART NUMBER LM2767 PACKAGE SOT-23 (5) BODY SIZE (NOM) 2.90 mm x 1.60 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. space space space space Typical Application 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM2767 SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 www.ti.com Table of Contents 1 2 3 4 5 6 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 4 4 5 6 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics ............................................. 7 Parameter Measurement Information .................. 7 8 Detailed Description .............................................. 8 7.1 Test Circuit ................................................................ 7 8.1 Overview ................................................................... 8 8.2 Functional Block Diagram ......................................... 8 8.3 Feature Description................................................... 8 8.4 Device Functional Modes.......................................... 8 9 Application and Implementation .......................... 9 9.1 Application Information.............................................. 9 9.2 Typical Application ................................................... 9 10 Power Supply Recommendations ..................... 13 11 Layout................................................................... 13 11.1 Layout Guidelines ................................................. 13 11.2 Layout Example .................................................... 13 12 Device and Documentation Support ................. 14 12.1 12.2 12.3 12.4 12.5 Device Support...................................................... Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 14 14 14 14 14 13 Mechanical, Packaging, and Orderable Information ........................................................... 14 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision C (May 2013) to Revision D * Added Device Information and Pin Configuration and Functions sections, ESD Rating table, Feature Description, Device Functional Modes, Application and Implementation, Power Supply Recommendations, Layout, Device and Documentation Support, and Mechanical, Packaging, and Orderable Information sections ................................................. 1 Changes from Revision B (May 2013) to Revision C * 2 Page Page Changed layout of National Data Sheet to TI format ........................................................................................................... 12 Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 5 Pin Configuration and Functions DBV Package 5-Pin SOT-23 Top View 1 5 2 3 4 Pin Functions PIN TYPE DESCRIPTION NUMBER NAME 1 VOUT Power Positive voltage output. 2 GND Ground Power supply ground input. 3 CAP- Power Connect this pin to the negative terminal of the charge-pump capacitor. 4 V+ Power Power supply positive voltage input. 5 CAP+ Power Connect this pin to the positive terminal of the charge-pump capacitor. Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 3 LM2767 SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MAX UNIT Supply voltage (V+ to GND, or V+ to VOUT) MIN 5.8 V VOUT continuous output current 30 mA Output short-circuit duration to GND (3) 1 sec 400 mW 150 C 150 C Continuous power dissipation (TA = 25C) (4) TJMax (4) -65 Storage temperature, Tstg (1) (2) (3) (4) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. If Military/Aerospace specified devices are required, contact the TI Sales Office/ Distributors for availability and specifications. VOUT may be shorted to GND for one second without damage. For temperatures above 85C, VOUT must not be shorted to GND or device may be damaged. The maximum allowable power dissipation is calculated by using PDMax = (TJMax - TA)/RJA, where TJMax is the maximum junction temperature, TA is the ambient temperature, and RJA is the junction-to-ambient thermal resistance of the specified package. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) 2000 Machine model (CDM), per JEDEC specification JESD22-C101 (2) 200 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MAX UNIT Junction temperature MIN -40 NOM 100 C Ambient temperature -40 85 C 240 C Lead temperature (soldering, 10 sec.) 6.4 Thermal Information LM2767 THERMAL METRIC (1) DBV (SOT-23) UNIT 5 PINS RJA (1) 4 Junction-to-ambient thermal resistance 210 C/W For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 6.5 Electrical Characteristics Unless otherwise specified, typical limits are for TJ = 25C, minimum and maximum limits apply over the full operating temperature range: V+ = 5 V, C1 = C2 = 10 F. (1) PARAMETER TEST CONDITIONS MIN V+ Supply voltage IQ Supply current No load IL Output current 1.8 V V+ 5.5 V ROUT Output resistance (2) IL = 15 mA OSC Oscillator frequency See (3) 8 SW Switching frequency See (3) 4 PEFF Power efficiency VOEFF Voltage conversion efficiency (1) (2) (3) TYP 1.8 5.5 40 90 15 UNIT V A mA 20 40 22 50 kHz 11 25 kHz RL (5 k) between GND and OUT 98% IL = 15 mA to GND 96% No load MAX 99.96% In the test circuit, capacitors C1 and C2 are 10-F, 0.3- maximum ESR capacitors. Capacitors with higher ESR may increase output resistance, and reduce output voltage and efficiency. Specified output resistance includes internal switch resistance and capacitor ESR. See the details in Application and Implementation for positive voltage doubler. The output switches operate at one half of the oscillator frequency, OSC = 2 x SW. Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 5 LM2767 SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 www.ti.com 6.6 Typical Characteristics (Circuit of Figure 9, VIN = 5 V, TA = 25C unless otherwise specified). 6 Figure 1. Supply Current vs Supply Voltage Figure 2. Output Resistance vs Capacitance Figure 3. Output Resistance vs Supply Voltage Figure 4. Output Resistance vs Temperature Figure 5. Output Voltage vs Load Current Figure 6. Switching Frequency vs Supply Voltage Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 Typical Characteristics (continued) (Circuit of Figure 9, VIN = 5 V, TA = 25C unless otherwise specified). Figure 7. Switching Frequency vs Temperature Figure 8. Output Ripple vs Load Current 7 Parameter Measurement Information 7.1 Test Circuit Figure 9. LM2767 Test Circuit Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 7 LM2767 SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 www.ti.com 8 Detailed Description 8.1 Overview The LM2767 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of 1.8 V to 5.5 V. Two low-cost capacitors and a diode (needed during start-up) are used in this circuit. 8.2 Functional Block Diagram LM2767 V+ OUT Oscillator Switch Array Switch Drivers CAP+ CAPGND 8.3 Feature Description The LM2767 contains four large CMOS switches which are switched in a sequence to double the input supply voltage. Energy transfer and storage are provided by external capacitors. Figure 11 illustrates the voltage conversion scheme. When S2 and S4 are closed, C1 charges to the supply voltage V+. During this time interval, switches S1 and S3 are open. In the next time interval, S2 and S4 are open; at the same time, S1 and S3 are closed, the sum of the input voltage V+ and the voltage across C1 gives the 2V+ output voltage when there is no load. The output voltage drop when a load is added is determined by the parasitic resistance (Rds(on) of the MOSFET switches and the ESR of the capacitors) and the charge transfer loss between capacitors. Details are discussed in Application and Implementation. 8.4 Device Functional Modes The LM2767 is always enabled when power is applied to the V+ pin (1.8 V VIN 5.5 V). To disable the part, power must be removed. 8 Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI's customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The LM2767 provides a simple and efficient means of creating an output voltage level equal to twice that of the input voltage. Without the need of an inductor, the application solution size can be reduced versus the magnetic DC-DC converter solution. 9.2 Typical Application The main application of the LM2767 is to double the input voltage. The range of the input supply voltage is 1.8 V to 5.5 V. Figure 10. LM2767 Typical Application 9.2.1 Design Requirements For typical switched-capacitor voltage converter applications, use the parameters listed in Table 1. Table 1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Minimum input voltage 1.8 to 5.5 V Output current (minimum) 15 mA Switching frequency 11 kHz (typical) 9.2.2 Detailed Design Procedure 9.2.2.1 Positive Voltage Doubler Figure 11. Voltage Doubling Principle Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 9 LM2767 SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 www.ti.com The output characteristics of this circuit can be approximated by an ideal voltage source in series with a resistance. The voltage source equals 2 V+. The output resistance Rout is a function of the ON resistance of the internal MOSFET switches, the oscillator frequency, and the capacitance and ESR of C1 and C2. Because the switching current charging and discharging C1 is approximately twice the output current, the effect of the ESR of the pumping capacitor C1 is multiplied by four in the output resistance. The output capacitor C2 is charging and discharging at a current approximately equal to the output current, therefore, its ESR only counts once in the output resistance. A good approximation of Rout is: R OUT 2R SW + 2 + 4ESR C1 + ESR C2 &OSC x C1 where * RSW is the sum of the ON resistance of the internal MOSFET switches shown in Figure 11. (1) The peak-to-peak output voltage ripple is determined by the oscillator frequency as well as the capacitance and ESR of the output capacitor C2: VRIPPLE = IL + 2 x IL x ESRC2 &OSC x C2 (2) High capacitance, low ESR capacitors can reduce both the output resistance and the voltage ripple. The Schottky diode D1 is only needed to protect the device from turning on its own parasitic diode and potentially latching up. During start-up, D1 also quickly charges up the output capacitor to VIN minus the diode drop thereby decreasing the start-up time. Therefore, the Schottky diode D1 must have enough current carrying capability to charge the output capacitor at start-up, as well as a low forward voltage to prevent the internal parasitic diode from turning on. A Schottky diode like 1N5817 can be used for most applications. If the input voltage ramp is less than 10 V/ms, a smaller Schottky diode like MBR0520LT1 can be used to reduce the circuit size. 9.2.2.2 Capacitor Selection As discussed in Positive Voltage Doubler, the output resistance and ripple voltage are dependent on the capacitance and ESR values of the external capacitors. The output voltage drop is the load current times the output resistance, and the power efficiency is D= POUT IL 2 RL = 2 2 PIN IL RL + IL ROUT + IQ (V+) where * * IQ(V+) is the quiescent power loss of the device; and IL2Rout is the conversion loss associated with the switch on-resistance, the two external capacitors and their ESRs. (3) The selection of capacitors is based on the allowable voltage droop (which equals Iout Rout), and the desired output voltage ripple. Low-ESR capacitors (Table 2) are recommended to maximize efficiency, reduce the output voltage drop and voltage ripple. Table 2. Low-ESR Capacitor Manufacturers PHONE WEBSITE Nichicon Corp. MANUFACTURER (847)-843-7500 www.nichicon.com PL & PF series, through-hole aluminum electrolytic AVX Corp. (843)-448-9411 www.avxcorp.com TPS series, surface-mount tantalum Sprague (207)-324-4140 www.vishay.com 593D, 594D, 595D series, surface-mount tantalum Sanyo (619)-661-6835 www.sanyovideo.com OS-CON series, through-hole aluminum electrolytic Murata (800)-831-9172 www.murata.com Ceramic chip capacitors Taiyo Yuden (800)-348-2496 www.t-yuden.com Ceramic chip capacitors Tokin (408)-432-8020 www.tokin.com Ceramic chip capacitors 10 CAPACITOR TYPE Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 9.2.2.3 Paralleling Devices Any number of LM2767 devices can be paralleled to reduce the output resistance. Because there is no closed loop feedback, as found in regulated circuits, stable operation is assured. Each device must have its own pumping capacitor C1, while only one output capacitor COUT is needed as shown in Figure 12. The composite output resistance is: R OUT = R OUT of each LM 2767 (4) Number of Devices Figure 12. Lowering Output Resistance by Paralleling Devices 9.2.2.4 Cascading Devices Cascading the several LM2767 devices is an easy way to produce a greater voltage (a two-stage cascade circuit is shown in Figure 13). The effective output resistance is equal to the weighted sum of each individual device: ROUT = 1.5 ROUT_1 + ROUT_2 (5) Note that increasing the number of cascading stages is practically limited because it significantly reduces the efficiency, increases the output resistance and output voltage ripple. Figure 13. Increasing Output Voltage By Cascading Devices 9.2.2.5 Regulating VOUT It is possible to regulate the output of the LM2767 by use of a low dropout regulator (such as LP2980-5.0). The whole converter is depicted in Figure 14. A different output voltage is possible by use of LP2980-3.3, LP2980-3.0, or LP2980-ADJ. The following conditions must be satisfied simultaneously for worst case design: 2VIN_MIN > VOUT_MIN + VDROP_MAX (LP2980) + IOUT_MAX x ROUT_MAX 2VIN_MAX < VOUT_MAX + VDROP_MIN (LP2980) + IOUT_MIN x ROUT_MIN (6) (7) Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 11 LM2767 SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 www.ti.com Figure 14. Generate a Regulated 5-V From 3-V Input Voltage 9.2.3 Application Curve Figure 15. Efficiency vs Load Current 12 Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 10 Power Supply Recommendations The LM2767 is designed to operate from as an inverter over an input voltage supply range from 1.8 V and 5.5 V. This input supply must be well-regulated and capable to supply the required input current. If the input supply is located far from the device, additional bulk capacitance may be required in addition to the ceramic bypass capacitors. 11 Layout 11.1 Layout Guidelines Use the following steps as a reference to ensure the device is stable across its intended operating voltage and current range. * Place CIN on the top layer (same layer as the LM2767) and as close to the device as possible. Connecting the input capacitor through short, wide traces to both the V+ and GND pins reduces the inductive voltage spikes that occur during switching which can corrupt the V+ line. * Place COUT on the top layer (same layer as the LM2767) and as close as possible to the OUT and GND pin. The returns for both CIN and COUT must come together at one point, as close to the GND pin as possible. Connecting COUT through short, wide traces reduce the series inductance on the OUT and GND pins that can corrupt the VOUT and GND lines and cause excessive noise in the device and surrounding circuitry. * Place C1 on the top layer (same layer as the LM2767 device) and as close to the device as possible. Connect the flying capacitor through short, wide traces to both the CAP+ and CAP- pins. 11.2 Layout Example LM2767 VOUT CAP+ GND CAP- V+ Figure 16. LM2767 Layout Example Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 13 LM2767 SNVS069D - FEBRUARY 2000 - REVISED AUGUST 2015 www.ti.com 12 Device and Documentation Support 12.1 Device Support 12.1.1 Third-Party Products Disclaimer TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE. 12.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2ETM Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.5 Glossary SLYZ022 -- TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 14 Submit Documentation Feedback Copyright (c) 2000-2015, Texas Instruments Incorporated Product Folder Links: LM2767 PACKAGE OPTION ADDENDUM www.ti.com 17-Mar-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (C) Device Marking (4/5) LM2767M5 NRND SOT-23 DBV 5 1000 TBD Call TI Call TI -40 to 85 S17B LM2767M5/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 S17B LM2767M5X/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 S17B (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 17-Mar-2017 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 20-Dec-2016 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) LM2767M5 SOT-23 DBV 5 1000 178.0 8.4 LM2767M5/NOPB SOT-23 DBV 5 1000 178.0 LM2767M5X/NOPB SOT-23 DBV 5 3000 178.0 3.2 3.2 1.4 4.0 8.0 Q3 8.4 3.2 3.2 1.4 4.0 8.0 Q3 8.4 3.2 3.2 1.4 4.0 8.0 Q3 Pack Materials-Page 1 W Pin1 (mm) Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 20-Dec-2016 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM2767M5 SOT-23 DBV 5 1000 210.0 185.0 35.0 LM2767M5/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM2767M5X/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 Pack Materials-Page 2 PACKAGE OUTLINE DBV0005A SOT-23 - 1.45 mm max height SCALE 4.000 SMALL OUTLINE TRANSISTOR C 3.0 2.6 1.75 1.45 PIN 1 INDEX AREA 1 0.1 C B A 5 2X 0.95 1.9 1.45 MAX 3.05 2.75 1.9 2 4 0.5 5X 0.3 0.2 3 (1.1) C A B 0.15 TYP 0.00 0.25 GAGE PLANE 8 TYP 0 0.22 TYP 0.08 0.6 TYP 0.3 SEATING PLANE 4214839/C 04/2017 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. Refernce JEDEC MO-178. www.ti.com EXAMPLE BOARD LAYOUT DBV0005A SOT-23 - 1.45 mm max height SMALL OUTLINE TRANSISTOR PKG 5X (1.1) 1 5 5X (0.6) SYMM (1.9) 2 2X (0.95) 3 4 (R0.05) TYP (2.6) LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:15X SOLDER MASK OPENING METAL SOLDER MASK OPENING METAL UNDER SOLDER MASK EXPOSED METAL EXPOSED METAL 0.07 MIN ARROUND 0.07 MAX ARROUND NON SOLDER MASK DEFINED (PREFERRED) SOLDER MASK DEFINED SOLDER MASK DETAILS 4214839/C 04/2017 NOTES: (continued) 4. Publication IPC-7351 may have alternate designs. 5. Solder mask tolerances between and around signal pads can vary based on board fabrication site. www.ti.com EXAMPLE STENCIL DESIGN DBV0005A SOT-23 - 1.45 mm max height SMALL OUTLINE TRANSISTOR PKG 5X (1.1) 1 5 5X (0.6) SYMM (1.9) 2 2X(0.95) 4 3 (R0.05) TYP (2.6) SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL SCALE:15X 4214839/C 04/2017 NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 7. Board assembly site may have different recommendations for stencil design. www.ti.com PACKAGE OUTLINE DBV0005A SOT-23 - 1.45 mm max height SCALE 4.000 SMALL OUTLINE TRANSISTOR C 3.0 2.6 1.75 1.45 PIN 1 INDEX AREA 1 0.1 C B A 5 2X 0.95 1.9 1.45 MAX 3.05 2.75 1.9 2 4 0.5 5X 0.3 0.2 3 (1.1) C A B 0.15 TYP 0.00 0.25 GAGE PLANE 8 TYP 0 0.22 TYP 0.08 0.6 TYP 0.3 SEATING PLANE 4214839/C 04/2017 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. Refernce JEDEC MO-178. www.ti.com EXAMPLE BOARD LAYOUT DBV0005A SOT-23 - 1.45 mm max height SMALL OUTLINE TRANSISTOR PKG 5X (1.1) 1 5 5X (0.6) SYMM (1.9) 2 2X (0.95) 3 4 (R0.05) TYP (2.6) LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:15X SOLDER MASK OPENING METAL SOLDER MASK OPENING METAL UNDER SOLDER MASK EXPOSED METAL EXPOSED METAL 0.07 MIN ARROUND 0.07 MAX ARROUND NON SOLDER MASK DEFINED (PREFERRED) SOLDER MASK DEFINED SOLDER MASK DETAILS 4214839/C 04/2017 NOTES: (continued) 4. Publication IPC-7351 may have alternate designs. 5. Solder mask tolerances between and around signal pads can vary based on board fabrication site. www.ti.com EXAMPLE STENCIL DESIGN DBV0005A SOT-23 - 1.45 mm max height SMALL OUTLINE TRANSISTOR PKG 5X (1.1) 1 5 5X (0.6) SYMM (1.9) 2 2X(0.95) 4 3 (R0.05) TYP (2.6) SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL SCALE:15X 4214839/C 04/2017 NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 7. Board assembly site may have different recommendations for stencil design. www.ti.com IMPORTANT NOTICE Texas Instruments Incorporated (TI) reserves the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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TI's provision of technical, application or other design advice, quality characterization, reliability data or other services or information, including, but not limited to, reference designs and materials relating to evaluation modules, (collectively, "TI Resources") are intended to assist designers who are developing applications that incorporate TI products; by downloading, accessing or using TI Resources in any way, Designer (individually or, if Designer is acting on behalf of a company, Designer's company) agrees to use any particular TI Resource solely for this purpose and subject to the terms of this Notice. TI's provision of TI Resources does not expand or otherwise alter TI's applicable published warranties or warranty disclaimers for TI products, and no additional obligations or liabilities arise from TI providing such TI Resources. TI reserves the right to make corrections, enhancements, improvements and other changes to its TI Resources. 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IN NO EVENT SHALL TI BE LIABLE FOR ANY ACTUAL, DIRECT, SPECIAL, COLLATERAL, INDIRECT, PUNITIVE, INCIDENTAL, CONSEQUENTIAL OR EXEMPLARY DAMAGES IN CONNECTION WITH OR ARISING OUT OF TI RESOURCES OR USE THEREOF, AND REGARDLESS OF WHETHER TI HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Unless TI has explicitly designated an individual product as meeting the requirements of a particular industry standard (e.g., ISO/TS 16949 and ISO 26262), TI is not responsible for any failure to meet such industry standard requirements. Where TI specifically promotes products as facilitating functional safety or as compliant with industry functional safety standards, such products are intended to help enable customers to design and create their own applications that meet applicable functional safety standards and requirements. Using products in an application does not by itself establish any safety features in the application. Designers must ensure compliance with safety-related requirements and standards applicable to their applications. Designer may not use any TI products in life-critical medical equipment unless authorized officers of the parties have executed a special contract specifically governing such use. Life-critical medical equipment is medical equipment where failure of such equipment would cause serious bodily injury or death (e.g., life support, pacemakers, defibrillators, heart pumps, neurostimulators, and implantables). Such equipment includes, without limitation, all medical devices identified by the U.S. Food and Drug Administration as Class III devices and equivalent classifications outside the U.S. TI may expressly designate certain products as completing a particular qualification (e.g., Q100, Military Grade, or Enhanced Product). Designers agree that it has the necessary expertise to select the product with the appropriate qualification designation for their applications and that proper product selection is at Designers' own risk. Designers are solely responsible for compliance with all legal and regulatory requirements in connection with such selection. Designer will fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of Designer's noncompliance with the terms and provisions of this Notice. Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright (c) 2018, Texas Instruments Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Texas Instruments: LM2767M5 LM2767M5/NOPB LM2767M5X LM2767M5X/NOPB