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© 2000 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 300 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW300 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 35N30 35 A
40N30 40 A
IDM TC= 25 °C, pulse width limited by TJM 35N30 140 A
40N30 160 A
IAR TC= 25 °C 35N30 35 A
40N30 40 A
EAR TC= 25°C30mJ
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ £ 150°C, RG = 2 W
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 3 00 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 mA 300 V
VGS(th) VDS = VGS, ID = 4 mA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 200 mA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 35N30 0.100 W
FH40N30 0.085 W
FM40N30 0.088 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
VDSS ID25 RDS(on)
IXFH/IXFM 35 N30 300 V 35 A 100 mW
IXFH 40 N30 300 V 40 A 85 mW
IXFM 40 N30 300 V 40 A 88 mW
trr £ 200 ns
TO-247 AD (IXFH)
TO-204 AE (IXFM)
DG
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
G = Gate, D = Drain,
S = Source, TAB = Drain
91523F (07/00)
(TAB)
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 ID25, pulse test 2 2 2 5 S
Ciss 4800 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 7 45 p F
Crss 280 pF
td(on) 20 30 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 60 90 ns
td(off) RG = 2 W (External) 75 1 00 ns
tf45 90 ns
Qg(on) 177 200 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 28 50 nC
Qgd 78 105 nC
RthJC 0.42 K/W
RthCK 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 35N30 35 A
40N30 40 A
ISM Repetitive; 35N30 140 A
pulse width limited by TJM 40N30 160 A
VSD IF = IS, VGS = 0 V, 1 .5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr IF = IS, -di/dt = 100 A/ms, TJ =25°C 200 ns
VR = 100 V TJ = 125°C 350 ns
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-204 AE (IXFM) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 38.61 39.12 1.520 1.540
B - 22.22 - 0.875
C 6.40 11.40 0.252 0.449
D 1.45 1.60 0.057 0.063
E 1.52 3.43 0.060 0.135
F 30.15 BSC 1.187 BSC
G 10.67 11.17 0.420 0.440
H 5.21 5.71 0.205 0.225
J 16.64 17.14 0.655 0.675
K 11.18 12.19 0.440 0.480
Q 3.84 4.19 0.151 0.165
R 25.16 26.66 0.991 1.050
IXFH 35N30 IXFH 40N30
IXFM 35N30 IXFM 40N30
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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© 2000 IXYS All rights reserved
IXFH 35N30 IXFH 40N30
IXFM 35N30 IXFM 40N30
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© 2000 IXYS All rights reserved
IXFH 35N30 IXFH 40N30
IXFM 35N30 IXFM 40N30
VDS - Volts
110100
I
D
- Amperes
1
10
100
Gate Charge - nCoulombs
0 25 50 75 100 125 150 175 200
V
GE
- Vo lt s
0
2
4
6
8
10
VSD - Volts
0.00.20.40.60.81.01.21.41.6
I
D
- Amperes
0
10
20
30
40
50
60
70
80
Vds - Volts
0 5 10 15 20 25
Capacitance - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
Crss
300
10µs
100µs
1ms
10ms
100ms
Coss
Limited by RDS(on)
VDS = 150V
ID = 21A
IG = 10mA
Ciss
Single Pulse
TJ = 125°C
TJ = 25°C
f = 1 MHz
VDS = 25V
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source
Fig.11 Transient Thermal Impedance
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