© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 7 1Publication Order Number:
MJD122/D
MJD122 (NPN)
MJD127 (PNP)
Preferred Device
Complementary Darlington
Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
•Lead Formed for Surface Mount Applications in Plastic Sleeves
•Surface Mount Replacements for 2N6040−2N6045 Series,
TIP120−TIP122 Series, and TIP125−TIP127 Series
•Monolithic Construction With Built−in Base−Emitter Shunt Resistors
•High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
•Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 100 Vdc
Collector−Base Voltage VCB 100 Vdc
Emitter−Base Voltage VEB 5 Vdc
Collector Current − Continuous
− Peak IC8
16 Adc
Base Current IB120 mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD20
0.16 W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD1.75
0.014 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance
Junction−to−Case RqJC 6.25 °C/W
Thermal Resistance
Junction−to−Ambient (Note1) RqJA 71.4 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
MARKING DIAGRAM
Y = Year
WW = Work Week
x = 2 or 7
G = Pb−Free Package
DPAK
CASE 369C
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
YWW
J12xG
123
4
SILICON
POWER TRANSISTOR
8 AMPERES
100 VOLTS, 20 WATTS
† For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device Package Shipping†
ORDERING INFORMATION
MJD122 DPAK 75 Units/Rail
MJD122T4 DPAK 2500/Tape & Reel
MJD122T4G DPAK
(Pb−Free) 2500/Tape & Reel
DPAK 75 Units/Rail
MJD127G DPAK
(Pb−Free) 75 Units/Rail
MJD127
DPAK 2500/Tape & Reel
MJD127T4G DPAK
(Pb−Free) 2500/Tape & Reel
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MJD122G DPAK
(Pb−Free) 75 Units/Rail
MJD127T4
MJD122 (NPN)
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2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0) VCEO(sus) 100 − Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0) ICEO − 10 mAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0) ICBO − 10 mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0) IEBO − 2 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 8 Adc, VCE = 4 Vdc)
hFE 1000
100 12,000
−
−
Collector−Emitter Saturation Voltage
(IC = 4 Adc, IB = 16 mAdc)
(IC = 8 Adc, IB = 80 mAdc)
VCE(sat) −
−2
4
Vdc
Base−Emitter Saturation Voltage (Note 2)
(IC = 8 Adc, IB = 80 mAdc) VBE(sat) − 4.5 Vdc
Base−Emitter On Voltage
(IC = 4 Adc, VCE = 4 Vdc) VBE(on) − 2.8 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) |hfe| 4 − MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD127
MJD122
Cob −
−300
200
pF
Small−Signal Current Gain
(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) hfe 300 − −
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
Figure 1. Power Derating
25
25
T, TEMPERATURE (°C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
TATC
TA
SURFACE
MOUNT
TC
MJD122 (NPN)
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VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
500
0.2
5000
2000
10,000
hFE, DC CURRENT GAIN
0.1 0.7
3000
0.5 1
20,000
1000
23 5
3
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.3 0.5 1 7352
1
IC, COLLECTOR CURRENT (AMP)
2
1.5
V, VOLTAGE (VOLTS)
3
2.5
1
0.5
0.2 30.1 0.70.3 1 5
10 20 30
200
300
0.3 7 10
0.7
0.5 7210
PNP MJD127 NPN MJD122
IC, COLLECTOR CURRENT (AMP)
500
0.2
5000
2000
10,000
hFE, DC CURRENT GAIN
VCE = 4 V
TJ = 150°C
7000
0.1 0.7
25°C
−55 °C
3000
0.5 1
20,000
700
1000
23 5
3
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.3 0.5 1 735
4 A
IC = 2 A
2
TJ = 25°C
1
IC, COLLECTOR CURRENT (AMP)
2
1.5
V, VOLTAGE (VOLTS)
3
2.5
1
0.5
TJ = 25°C
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4 V
VCE(sat) @ IC/IB = 250
0.2 30.1 0.70.3 1 5
10 20 30
Figure 2. DC Current Gain
Figure 3. Collector Saturation Region
Figure 4. “On” Voltages
200
300
0.3 7 10
0.7
0.5 7210
6 A
VCE = 4 V
TJ = 150°C
25°C
−55 °C
TJ = 25°C
4 A
IC = 2 A 6 A
TJ = 25°C
VBE @ VCE = 4 V
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
TYPICAL ELECTRICAL CHARACTERISTICS
MJD122 (NPN)
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4
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
IC, COLLECTOR CURRENT (AMP)
0.2
*IC/IB ≤ hFE/3
0.1
−55 °C to 25°C
123 10
104
VBE, BASE−EMITTER VOLTAGE (VOLTS)
10−1
0+0.4
, COLLECTOR CURRENT (A)μIC
103
102
101
100
−0.2 −0.4 −0.6
TJ = 150°C
100°C
REVERSE FORWARD
25°C
VCE = 30 V
105
+0.6 +0.2 −0.8 −1 −1.2 −1.4
104
VBE, BASE−EMITTER VOLTAGE (VOLTS)
10−1
, COLLECTOR CURRENT (A)μIC
103
102
101
100
105
+5
−5
qVB for VBE 25°C to 150°C
qVC for VCE(sat)
Figure 5. Temperature Coefficients
VR, REVERSE VOLTAGE (VOLTS)
Cib
30
1 5 20 100
TJ = 25°C
300
50
70
100
0.1 2 10 50
PNP
NPN
0.50.2
Figure 6. Collector Cut−Off Region
Figure 7. Small−Signal Current Gain
1
f, FREQUENCY (kHz)
100
210
500
5000
TC = 25°C
VCE = 4 Vdc
IC = 3 Adc
3000
55020 100
10,000
200
300
200 500 1000
PNP MJD127 NPN MJD122
−4
−3
−2
−1
0
+4
+3
+2
+1
0.50.3 75
IC, COLLECTOR CURRENT (AMP)
0.20.1 1 2 30.50.3 75
2000
1000
10
50
20
30 PNP
NPN
200
Figure 8. Capacitance
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+5
−5
−4
−3
−2
−1
0
+4
+3
+2
+1
0.7 10
0−0.4 +0.2 +0.4 +0.6−0.6 −0.2 +0.8 +1 +1.2 +1.4
hfe , SMALL−SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)
−55 °C to 25°C
25°C to 150°C
*IC/IB ≤ hFE/3
25°C to 150°C
−55 °C to 25°C
25°C to 150°C
−55 °C to 25°C
*qVC for VCE(sat)
qVB for VBE
REVERSE FORWARD
VCE = 30 V
TJ = 150°C
100°C
25°C
Cob
TYPICAL ELECTRICAL CHARACTERISTICS
MJD122 (NPN)
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5
t, TIME OR PULSE WIDTH (ms)
1
0.01 1000
0.3
0.2
0.07
r(t), EFFECTIVE TRANSIENT
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
THERMAL RESISTANCE (NORMALIZED)
0.7
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1 0.5 30.3
0.2 0.7 1
5
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
t, TIME (s)μ
3
2
0.7
0.5
0.3
0.2
ts
tf
tr
td @ VBE(off) = 0 V
PNP
NPN
Figure 9. Switching Times Test Circuit Figure 10. Switching Times
0.1
1
10752
Figure 11. Thermal Response
V2
APPROX
+8 V
0≈ 8 k
SCOPE
VCC
−30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25 ms
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
+ 4 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V1
APPROX
−12 V
TUT
RB
D1≈ 120
0.07
0.05
0.1
0.01
IC, COLLECTOR CURRENT (AMP)
5
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2 BONDING WIRE LIMIT
THERMAL LIMIT
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
10 507
TJ = 150°C
100m
σ
1ms
dc
0.1
1
3
15
20
3020 70
CURVES APPLY BELOW RATED VCEO
5ms
Figure 12. Maximum Forward Bias
Safe Operating rea
321
10
0.05
0.02
0.03
500m
σ
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
MJD122 (NPN)
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6
Figure 13. Darlington Schematic
BASE
EMITTER
COLLECTOR
≈8 k ≈120
PNP
BASE
EMITTER
COLLECTOR
≈8 k ≈120
NPN
MJD122 (NPN)
http://onsemi.com
7
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
D
A
K
B
R
V
S
FL
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
−T− SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.22
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.180 0.215 4.57 5.45
S0.025 0.040 0.63 1.01
U0.020 −−− 0.51 −−−
V0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244 3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
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MJD122/D
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