TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland. 6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
RF01012 Rev A, August 2010 High Reliability Product Group Page 1 of 5
DEVICES MRT100KP40A thru MRT100KP400CA, e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Suppresses transients up to 100 kW @ 6.4/69 µs
Fast response with less than 5ns turn-on time
Preferred 100kW TVS for aircraft power bus protection
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to MicroNote 129 for more details on the screening options.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
Protection from high power switching transients, induced RF, and lightning threats with
comparatively small package size (0.25 inch diameter)
Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4
Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 4 (6.4/69 µs) on all
devices
Pin injection protection per RTCA/DO-160E up to Level 5 for Waveform 4 (6.4/69 µs) on device
types MRT100KP33A or CA up to MRT100KP260A or CA
Pin injection protection per RTCA/DO-160E up to Level 3 for Waveform 5A (40/120 µs) on all
devices
Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 5A (40/120 µs) on
device types MRT100KP33A or CA up to MRT100KP64A or CA
Consult Factory for other voltages with similar Peak Pulse Power capabilities
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 100 kW at @ 6.4/69 µs in Figure 8 (also see Figures 1
and 2)
impulse repetition rate (duty factor) of 0.005 %
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65 ºC to +150 °C
Thermal Resistance: 17.5 °C/W junction to lead, or 77.5 °C/W junction to ambient when
mounted on FR4 PC board with 4 mm2 copper pads (1 oz ) and track width 1 mm, length 25
mm
Steady-state power dissipation: 7 Watts @ TL = 27.5 °C or 1.61 Watts at TA = 25 °C when
mounted on FR4 PC Board described above for thermal resistance
Forward surge: 250 Amps 8.3 ms half-sine wave for unidirectional devices only
Solder temperatures: 260 °C for 10 s (maximum)
CASE 5A
Unidirectional and Bidirectional
Transient Voltage Suppressor
- High Reliability controlled devices
- Economical series for thru hole mounting
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 40 to 400 V standoff voltages (VWM)
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland. 6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01012 Rev A, August 2010 High Reliability Product Group Page 2 of 5
MECHANICAL AND PACKAGING
Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements
Tin-Lead (90 % Sn, 10 % Pb) or RoHS (100% Sn) Compliant annealed matte-Tin plating readily solderable per
MIL-STD-750, method 2026
Body marked with part number
Cathode indicated by band. No cathode band on bi-directional devices.
Weight: 1.7 grams (approximate)
Available in bulk or custom tape-and-reel packaging
TAPE-AND-REEL standard per EIA-296 (add “TR” suffix to part number)
PACKAGE DIMENSIONS
SYMBOLS & DEFINITIONS
Symbol
Symbol
Definition
VWM
IPP
Peak Pulse Current
PPP
VC
Clamping Voltage
VBR
IBR
Breakdown Current for VBR
ID
NOTE: Cathode indicated by band
All dimensions in inches
millimeters
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland. 6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01012 Rev A, August 2010 High Reliability Product Group Page 3 of 5
ELECTRICAL CHARACTERISTICS @ 25oC
NOTE 1:
For bidirectional construction, indicate a CA suffix (instead of A) after the part number
NOTE 2:
Clamping voltage does not include any variable parasitic lead inductance effects observed during the 6.4 µs rise time
due to lead length
NOTE 3:
The Maximum Peak Pulse Current (IPP) shown represents the performance capabilities by design.
* Surge test screening is only performed up to 900 Amps (test equipment limitations)
NOTE 4:
Part numbers in bold italics are preferred devices
Part
Number
(1) (4)
Rated
Stand-off
Voltage
VWM
Breakdown Voltage
V(BR) Volts
@ I(BR)
V(BR) I(BR)
Maximum
Clamping
@ IPP (2)
VC
Maximum
Reverse
Leakage
@ VWM
ID
Maximum
Peak Pulse
Current (3)
@6.4/69 µs
IPP
Maximum
V(BR)
temperature
Coefficient
V(BR)
VOLTS
VOLTS
mA
VOLTS
Amps
Amps
mV/oC
RT100KP40A
RT100KP43A
40
43
44.4-49.1
47.8-52.8
20
10
78.6
84.5
1500
500
1273 *
1184 *
46
50
RT100KP45A
RT100KP48A
45
48
50.0-55.3
53.3-58.9
5
5
88.5
94.3
150
150
1130 *
1061 *
52
56
RT100KP51A
RT100KP54A
51
54
56.7-62.7
60.0-66.3
5
5
101
106
50
25
990 *
943 *
60
63
RT100KP58A
RT100KP60A
58
60
64.4-71.2
66.7-73.7
5
5
114
118
15
15
878
848
68
71
RT100KP64A
RT100KP70A
64
70
71.1-78.6
77.8-86.0
5
5
126
138
10
10
795
725
76
83
RT100KP75A
RT100KP78A
75
78
83.3-92.1
86.7-95.8
5
5
147
153
10
10
680
655
89
93
RT100KP85A
RT100KP90A
85
90
94.4-104
100-111
5
5
166
178
10
10
602
563
102
109
RT100KP100A
RT100KP110A
100
110
111-123
122-135
5
5
197
216
10
10
508
463
121
133
RT100KP120A
RT100KP130A
120
130
133-147
144-159
5
5
235
254
10
10
426
394
145
157
RT100KP150A
RT100KP160A
150
160
167-185
178-197
5
5
296
315
10
10
338
318
183
195
RT100KP170A
RT100KP180A
170
180
189-209
200-221
5
5
334
354
10
10
300
283
207
219
RT100KP200A
RT100KP220A
200
220
222-245
245-271
5
5
392
434
10
10
256
231
243
269
RT100KP250A
RT100KP260A
250
260
278-308
289-320
5
5
493
512
10
10
203
196
306
318
RT100KP280A
RT100KP300A
280
300
311-345
333-369
5
5
552
590
10
10
181
170
344
368
RT100KP350A
RT100KP400A
350
400
389-431
444-492
5
5
690
787
10
10
145
127
430
490
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland. 6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01012 Rev A, August 2010 High Reliability Product Group Page 4 of 5
GRAPHS
Correct Incorrect
FIGURE 3 FIGURE 5
FIGURE 4 FIGURE 6
NOTE: This PPP versus time graph allows the designer to use these parts over a broad
power spectrum using the guidelines illustrated in MicroNote 104 on
www.microsemi.com. Aircraft transients are described with exponential decaying
waveforms. For suppression of square-wave impulses, derate power and current to
66% of that for exponential decay shown in Figure 1.
PPP Peak Pulse Power vs. Pulse Time – kW
Non-Repetitive Pulse
tp – Pulse Time – sec.
FIGURE 1
Peak Pulse Power vs. Pulse Time
To 50% of Exponentially Decaying Pulse
Peak Pulse Power (PPP) or continuous
Power in % of 25oC rating
TL Lead Temperature oC
FIGURE 2
POWER DERATING
INSTALLATION
TVS devices used across power lines are
subject to relatively high magnitude surge
currents and are more prone to adverse
parasitic inductance effects in the
mounting leads. Minimizing the shunt
path of the lead inductance and their
V = -Ldi/dt effects will optimize the TVS
effectiveness. Examples of optimum
installation and poor installation are
illustrated in Figures 3 to 6. Figure 3
illustrates minimal parasitic inductance
with attachment at end of device.
Inductive voltage drop is across input
leads. Virtually no “overshoot” voltage
results as illustrated with Figure 4. The
loss of effectiveness in protection caused
by excessive parasitic inductance is
illustrated in Figures 5 and 6. Also see
MicroNote 111 for further information on
“Parasitic Lead Inductance in TVS”.
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland. 6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01012 Rev A, August 2010 High Reliability Product Group Page 5 of 5
GRAPHS Cond.
t – time t – time t - Time
Note: frequency is 1MHz
FIGURE 7 – Waveform 3 FIGURE 8 – Waveform 4 FIGURE 9 – Waveform 5A
NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4 s. Equivalent peak pulse power at each of
the pulse widths represented in RTCA/DO-160E for waveforms 3, 4 and 5A (above) have been determined referencing Figure 1
herein as well as MicroNotes 104 and 120 (found on www.microsemi.com) and are listed below.
WAVEFORM
NUMBER
PULSE
WIDTH
s
PEAK PULSE
POWER
kW
Peak Pulse Current Conversion Factor
* from Rated IPP at 6.4/69 µs
3
4
340
3.40x
4
6.4/69
100
1.00x
5A
40/120
70
0.70x
* Multiply by the conversion factor shown with reference to the maximum rated IPP in the Electrical Characteristics Table on page 2.
NOTE 1:
High current fast rise-time transients of 250 ns or less can more than triple the VC from parasitic inductance effects
(V= -Ldi/dt) compared to the clamping voltage shown in the initial Electrical Characteristics as also described in
Figures 5 and 6 herein
NOTE 2:
Also see MicroNotes 127, 130, and 132 on www.microsemi.com for further information on Transient Voltage
Suppressors with reference to aircraft industry specification RTCA/DO-160E.
t