TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com Unidirectional and Bidirectional Transient Voltage Suppressor DEVICES - High Reliability controlled devices - Economical series for thru hole mounting - Unidirectional (A) and Bidirectional (CA) construction - Selections for 40 to 400 V standoff voltages (VWM) MRT100KP40A thru MRT100KP400CA, e3 LEVELS M, MA, MX, MXL FEATURES High reliability controlled devices with wafer fabrication and assembly lot traceability 100 % surge tested devices Suppresses transients up to 100 kW @ 6.4/69 s Fast response with less than 5ns turn-on time Preferred 100kW TVS for aircraft power bus protection Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options. Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B RoHS Compliant devices available by adding "e3" suffix 3 lot norm screening performed on Standby Current ID CASE 5A APPLICATIONS / BENEFITS Protection from high power switching transients, induced RF, and lightning threats with comparatively small package size (0.25 inch diameter) Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4 Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 4 (6.4/69 s) on all devices Pin injection protection per RTCA/DO-160E up to Level 5 for Waveform 4 (6.4/69 s) on device types MRT100KP33A or CA up to MRT100KP260A or CA Pin injection protection per RTCA/DO-160E up to Level 3 for Waveform 5A (40/120 s) on all devices Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 5A (40/120 s) on device types MRT100KP33A or CA up to MRT100KP64A or CA Consult Factory for other voltages with similar Peak Pulse Power capabilities MAXIMUM RATINGS Peak Pulse Power dissipation at 25 C: 100 kW at @ 6.4/69 s in Figure 8 (also see Figures 1 and 2) impulse repetition rate (duty factor) of 0.005 % tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional Operating and Storage temperature: -65 C to +150 C Thermal Resistance: 17.5 C/W junction to lead, or 77.5 C/W junction to ambient when 2 mounted on FR4 PC board with 4 mm copper pads (1 oz ) and track width 1 mm, length 25 mm Steady-state power dissipation: 7 Watts @ TL = 27.5 C or 1.61 Watts at TA = 25 C when mounted on FR4 PC Board described above for thermal resistance Forward surge: 250 Amps 8.3 ms half-sine wave for unidirectional devices only Solder temperatures: 260 C for 10 s (maximum) RF01012 Rev A, August 2010 High Reliability Product Group Page 1 of 5 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ MECHANICAL AND PACKAGING Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements Tin-Lead (90 % Sn, 10 % Pb) or RoHS (100% Sn) Compliant annealed matte-Tin plating readily solderable per MIL-STD-750, method 2026 Body marked with part number Cathode indicated by band. No cathode band on bi-directional devices. Weight: 1.7 grams (approximate) Available in bulk or custom tape-and-reel packaging TAPE-AND-REEL standard per EIA-296 (add "TR" suffix to part number) PACKAGE DIMENSIONS NOTE: Cathode indicated by band All dimensions in inches millimeters SYMBOLS & DEFINITIONS Symbol VWM PPP VBR ID Definition Symbol Working Peak (Standoff) Voltage Peak Pulse Power Breakdown Voltage Standby Current RF01012 Rev A, August 2010 IPP VC IBR Definition Peak Pulse Current Clamping Voltage Breakdown Current for VBR High Reliability Product Group Page 2 of 5 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ ELECTRICAL CHARACTERISTICS @ 25oC Part Number (1) (4) RT100KP40A RT100KP43A RT100KP45A RT100KP48A RT100KP51A RT100KP54A RT100KP58A RT100KP60A RT100KP64A RT100KP70A RT100KP75A RT100KP78A RT100KP85A RT100KP90A RT100KP100A RT100KP110A RT100KP120A RT100KP130A RT100KP150A RT100KP160A RT100KP170A RT100KP180A RT100KP200A RT100KP220A RT100KP250A RT100KP260A RT100KP280A RT100KP300A RT100KP350A RT100KP400A VOLTS VOLTS mA VC VOLTS Maximum Reverse Leakage @ VWM ID Amps 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170 180 200 220 250 260 280 300 350 400 44.4-49.1 47.8-52.8 50.0-55.3 53.3-58.9 56.7-62.7 60.0-66.3 64.4-71.2 66.7-73.7 71.1-78.6 77.8-86.0 83.3-92.1 86.7-95.8 94.4-104 100-111 111-123 122-135 133-147 144-159 167-185 178-197 189-209 200-221 222-245 245-271 278-308 289-320 311-345 333-369 389-431 444-492 20 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 78.6 84.5 88.5 94.3 101 106 114 118 126 138 147 153 166 178 197 216 235 254 296 315 334 354 392 434 493 512 552 590 690 787 1500 500 150 150 50 25 15 15 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Rated Stand-off Voltage VWM Breakdown Voltage V(BR) Volts @ I(BR) V(BR) I(BR) Maximum Clamping @ IPP (2) Maximum Peak Pulse Current (3) @6.4/69 s IPP Amps Maximum V(BR) temperature Coefficient V(BR) mV/oC 1273 * 1184 * 1130 * 1061 * 990 * 943 * 878 848 795 725 680 655 602 563 508 463 426 394 338 318 300 283 256 231 203 196 181 170 145 127 46 50 52 56 60 63 68 71 76 83 89 93 102 109 121 133 145 157 183 195 207 219 243 269 306 318 344 368 430 490 NOTE 1: For bidirectional construction, indicate a CA suffix (instead of A) after the part number NOTE 2: Clamping voltage does not include any variable parasitic lead inductance effects observed during the 6.4 s rise time due to lead length NOTE 3: The Maximum Peak Pulse Current (IPP) shown represents the performance capabilities by design. * Surge test screening is only performed up to 900 Amps (test equipment limitations) NOTE 4: Part numbers in bold italics are preferred devices RF01012 Rev A, August 2010 High Reliability Product Group Page 3 of 5 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ Peak Pulse Power (PPP) or continuous Power in % of 25oC rating PPP Peak Pulse Power vs. Pulse Time - kW Non-Repetitive Pulse GRAPHS tp - Pulse Time - sec. TL Lead Temperature oC FIGURE 1 Peak Pulse Power vs. Pulse Time To 50% of Exponentially Decaying Pulse FIGURE 2 POWER DERATING NOTE: This PPP versus time graph allows the designer to use these parts over a broad power spectrum using the guidelines illustrated in MicroNote 104 on www.microsemi.com. Aircraft transients are described with exponential decaying waveforms. For suppression of square-wave impulses, derate power and current to 66% of that for exponential decay shown in Figure 1. Correct FIGURE 3 INSTALLATION TVS devices used across power lines are subject to relatively high magnitude surge currents and are more prone to adverse parasitic inductance effects in the mounting leads. Minimizing the shunt path of the lead inductance and their V = -Ldi/dt effects will optimize the TVS effectiveness. Examples of optimum installation and poor installation are illustrated in Figures 3 to 6. Figure 3 illustrates minimal parasitic inductance with attachment at end of device. Inductive voltage drop is across input leads. Virtually no "overshoot" voltage results as illustrated with Figure 4. The loss of effectiveness in protection caused by excessive parasitic inductance is illustrated in Figures 5 and 6. Also see MicroNote 111 for further information on "Parasitic Lead Inductance in TVS". FIGURE 4 RF01012 Rev A, August 2010 Incorrect FIGURE 5 FIGURE 6 High Reliability Product Group Page 4 of 5 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ GRAPHS Cond. t t - time t - time Note: frequency is 1MHz t - Time FIGURE 7 - Waveform 3 FIGURE 8 - Waveform 4 FIGURE 9 - Waveform 5A NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4 s. Equivalent peak pulse power at each of the pulse widths represented in RTCA/DO-160E for waveforms 3, 4 and 5A (above) have been determined referencing Figure 1 herein as well as MicroNotes 104 and 120 (found on www.microsemi.com) and are listed below. WAVEFORM NUMBER PULSE WIDTH PEAK PULSE POWER Peak Pulse Current Conversion Factor * from Rated IPP at 6.4/69 s 3 4 5A s 4 6.4/69 40/120 kW 340 100 70 3.40x 1.00x 0.70x * Multiply by the conversion factor shown with reference to the maximum rated IPP in the Electrical Characteristics Table on page 2. NOTE 1: High current fast rise-time transients of 250 ns or less can more than triple the V C from parasitic inductance effects (V= -Ldi/dt) compared to the clamping voltage shown in the initial Electrical Characteristics as also described in Figures 5 and 6 herein NOTE 2: Also see MicroNotes 127, 130, and 132 on www.microsemi.com for further information on Transient Voltage Suppressors with reference to aircraft industry specification RTCA/DO-160E. RF01012 Rev A, August 2010 High Reliability Product Group Page 5 of 5