TOSHIBA YTAF840 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (x-MOSV) YTAF840 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS Unit in_mm 2.7202 @ Low Drain-Sorce ON Resistance : Rps (ON) =0.75Q (Typ.) @ High Forward Transfer Admittance : [Yf|=7.0S (Typ.) Low Leakage Current : Ingg=100.A (Max.) (Vpg=500V) @ Enhancement-Mode =: Vip,=2.0~4.0V (Vpg=10V, Ip=1mA) MAXIMUM RATINGS (Ta = 25C) 0.75 40.15 CILARACTERISTIC SYMBOL | RATING | UNIT || 224222 25420. Drain-Source Voltage Vpss 500 Vv = os Drain-Gate Voltage (Rg=20k1)) VDGR 500 Vv | 123 F |S 2 Gate-Source Voltage Vass +30 Vv ly Dente Mecsnee DC Ip 8 A 1. GATE wrain VUurrent Pulse IppP 32 A 2. DRAIN 36 at P 3. SOURCE Drain Power Dissipation (Te=25C) Pp AQ Ww Queda Dolan Avalancha Puacesy em Tan 219 aT JEDEC WATS pst AVdaniCme ergy AS wae itie Avalanche Current IAR 8 A KIAJ 5C-67 Repetitive Avalanche Energy* EAR 4 mJ TOSHIBA 2-10R1B Channel Temperature Tech 150 C Weight : 1.9 Storage Temperature Range Tstg 55~150 C THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL | MAX. | UNIT Thermal Resistance, Channel to Case Rth (che) | 3.125 [C/W Thermal Resistance, Channel to Ambient Rth (ch-a) | 62.5 (C/W Note ; * Repetitive rating ; Pulse Width Limited by Max, junction temperature, * Vpop=90V, Teh =25C, L=8.3mH, Rg=250, I~AR=8A This transistor is an electrostatic sensitive device. Please handle with caution. 96100 1EAAZ @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products ar used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intelectual property or other rights oT the third parties which may resuit from its use. No iicense is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. oe the information contained herein is subject to change without notice. 1998-03-04 1/5TOSHIBA YTAF840 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. | MAX, | UNIT Gate Leakage Current Igse | Vag=2t25V, Vps-0V | 10] #A Gate-Source Breakdown + = + | Voltage V (BR) GSs|IG=+10zA, Vpg=0V +30 Vv Drain Cut-off Current Ipss | Vpg=500V, Vag=0V LOU | vA Drain-Source Breakdown Voltage V (BR) DSS |Ip=10mA, Vag=0V 500 Vv Gate Threshold Voltage Vth Vps=10V, Ip=lmA 2.0 | 4.0 Vv Drain-Source ON Resistance |RDS(ON) | Vag=10V, Ip=4A _ 0.75 | 0.85 | Forward Transfer Admittance iY tsi Vps=10V, Ip=4A 3.5 70; 5 Input Capacitance Ciss | 1300; Reverse Transfer Capacitance Cres Vps=10V, Vqag=0V, f=1MHz _ 130} pF Output Capacitance Coss OR Btw. PM. a aAtv7_ Tp=4A on Dube Lite ur Vv Avy 20 GS oy Turn-on Time t = 45) Switching on S RL =500 . 1 ns Time Fall Time te ; 40} Vpp =200V . VIN : ty, te<Sns, Turn-off Time toff Duty =1%, tyw=10ps _ 140; Total Gate Charge (Gate- vy _ 30| _ Source Plus Gate-Drain) SE Vans400V. Vae=10V. In=s8A C Gate-Source Charge Ques DD > YGS= > *D= 17); n Gate-Drain (Miiier) Charge Qod ig; SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Continuous Drain Reverse I _ _ _ al A Current DR Pulse Drain Reverse Current IDRP 32) A Diode Forward Voltage Vosr |Ipr=8A, Vas=oVv |-17] V Reverse Recovery Time ter IpR=8A, Veg=0V |} 1200); ns Reverse Recovery Charge Qrr dIpr/dt=100A/ ps 10} | 2C MARKING Fyta * Lot Number Fs4o7;_ TYPE 000 Week (01 to 53) Lo Year (Last Number of the Christian Era) Z z 1998-03-04 2/5TOSHIBA YTAF840 Ip - Vps COMMON SOURCE 16 Te=25C 4 a BR 4 & m a ~ o 2 Z 0 2 4 5 8 10 DRAIN-SOURCE VOLTAGE Vpg (V) Ip - Yas COMMON SOURCE Vpg=20V = a & a 2 oa ~ La) & g 0 2 4 6 8 10 GATE-SOURCE VOLTAGE Vag (V) lYfs] ID COMMON SOURCE Te= 55C Vns=20V [Yys| <8) FORWARD TRANSFER ADMITTANCE 03 03 1 3 5 10 30 DRAIN CURRENT Ip (A) DRAIN CURRENT Ip (A) (V) DRAIN-SOURCE VOLTAGE Vpog (9 DRAIN-SOURCE ON RESISTANCE RDS (ON) Ip - VDs COMMON SOURCE Te=25C 45 Vgga4v 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE Vps (V) Vos Vas COMMON SOURCE Tc=25C 6 4 8 12 16 20 GATE-SOURCE VGLTAGE Vag <(V} RDS (ON) ID COMMON SOURCE 3 Te=25C VQg=10, LBV 0.3 05 1 3 5 10 30 DRAIN CURRENT Ip (A) 1998-03-04 3/5TOSHIBA YTAF840 DRAIN-SOURCE ON RESISTANCE Rps(on) (2) CAPACITANCE C (pF) (W) DRAIN POWER DISSIPATION Pp RDS (ON) Te COMMON SOURCE Vag=10 0 80 -40 0 40 80 120 160 CASE TEMPERATURE Te (C) CAPACITANCE Vps COMMON SOURCE Vag =0V f=1MHz Te=285C. 0.1 03 656 1 8 5 10 30 50 100 DRAIN-SOURCE VOLTAGE Vpg (V) Pp Te 0 40 80 120 160 200 CASE TEMPERATURE Te (C) (A) DRALN REVERSE CURRENT Ipr Vv) Vib GATE THRESHOLD VOLTAGE wv) DRAIN-SOURCE VOLTAGE Vos IDR - Vps COMMON SOURCE Te=25C 30 10 5 3 = an o> ea Vgsg=0, 1V 0 -0.2 -0.4 -0.6 -0,.8 -10 -12 DRAIN-SOURCE VOLTAGE Vpg () Vth Te COMMON SOURCE Vpg=10 ip=imaA 0 -86 46 0 40 80 126 160 CASE TEMPERATURE Tc (OC) DYNAMIC INPUT /OUTPUT COMMON SOURCE Ip=10A Te= 25C Vpp=100vV 0 10 20 30 40 50 TOTAL GATE CHARGE Q, (nC) WW) GATE-SOURCE VOLTAGE Vag 1998-03-04 4/5TOSHIBA YTAF840 (A) Ip DRAIN CURRENT Tth tw = o 9 bo 2 an 9.05 0.08 GLE PULSE IMPEDANCE = rtht)/ Rta teh co a = Duty =t/T 0.005 Rth (ch-c) = 3-125C / W 0.003 10 NORMALIZED TRANSIENT THERMAL fe 1002 Im 10m 100m 1 10 PULSE WIDTH ty {s) SAFE OPERATING AREA Eas Tch 100 590 ip MAX. (PULSE) * 2 30 tn a fe Ip MAX, 10}(CONTINUGUS) | to 5 Zz fe] 3 ma a 5 Zz 3 1 < S oO DC OPERATION < Te= 25C 4 03 25 50 18 100 125 150 CHANNEL TEMPERATURE Teh (C) O1 *% SINGLE 0.05 NONREPETITIVE PULSE Paes Te 9aoC [ ByDSS UO oe Curves must be derated linearly Voss I with increase in temperature. MAX. 15V | | ] AR f se 3 10 30 100) 300s -15V I. mA \ DRAIN-SOURCE VOLTAGE pg (V) ow Vpp /% | vps c \ TEST CIRCUIT WAVE FORM Peak IAR=S8A, RQ=250 _l., ByDSss T7_.. aan , aa or EAS= 9 LI ( Bimea_Vnn DD=20, L=o.omno LWW? Ds 1998-03-04 5/5