BRT11/ 12/ 13
Document Number 83689
Rev. 1.4, 11-Apr-05
Vishay Semiconductors
www.vishay.com
1
i179041
1
2
3
6
5
4
MT2
MT1
NC
A
C
NC
Optocoupler, Phototriac Output
Features
•I
TRMS = 300 mA
• High Static dVcrq/dt < 10,000 V/µs
• Electrically Insulated between Input
and output circuit
• Microcomputer compatible - Very Low Trigger
Current
• Non-zero voltage detectors High input Sensitivity
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code J
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
Industrial controls
Office equipment
Consumer appliances
Description
The BRT11/12/13 are AC optocouplers non-zero volt-
age detectors consisting of two electrically insulated
lateral power ICs which integrate a thyristor system, a
photo detector and noise suppression at the output
and an IR GaAs diode input.
Order Information
For additional information on the available options refer to
Option Information.
Part Remarks
BRT12-F 600 V VDRM, 1.2 mA IFT, DIP-6
BRT11-H 400 V VDRM, 2 mA IFT, DIP-6
BRT12-H 600 V VDRM, 2 mA IFT, DIP-6
BRT13-H 800 V VDRM, 2 mA IFT, DIP-6
BRT11-M 400 V VDRM, 3 mA IFT, DIP-6
BRT12-M 600 V VDRM, 3 mA IFT, DIP-6
BRT13-M 800 V VDRM, 3 mA IFT, DIP-6
BRT12-F-X006 600 V VDRM, 1.2 mA IFT, DIP-6 400 mil
(option 6)
BRT12-F-X007 600 V VDRM, 1.2 mA IFT, DIP-6 400 mil
(option 7)
BRT12-H-X006 600 V VDRM, 2 mA IFT, DIP-6 400 mil
(option 6)
BRT12-H-X007 600 V VDRM, 2 mA IFT, SMD-6 (option 7)
BRT12-H-X009 600 V VDRM, 2 mA IFT, SMD-6 (option 9)
BRT13-H-X006 800 V VDRM, 2 mA IFT, DIP-6 400 mil
(option 6)
BRT13-H-X007 800 V VDRM, 2 mA IFT, SMD-6 (option 7)
BRT13-H-X009 800 V VDRM, 2 mA IFT, SMD-6 (option 9)
BRT12-M-X006 600 V VDRM, 3 mA IFT, DIP-6 400 mil
(option 6)
e3
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2
Document Number 83689
Rev. 1.4, 11-Apr-05
BRT11/ 12/ 13
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
1) Test AC voltage in acc. with DIN 57883, June 1980
Parameter Test condition Symbol Value Unit
Reverse voltage VR6V
Forward continuous current IF20 mA
Surge forward current IFSM 1.5 A
Power dissipation t ≤ 10 µsP
diss 30 mW
Parameter Test condition Part Symbol Value Unit
Repetitive peak off-state voltage BRT11 VDRM 400 V
BRT12 VDRM 600 V
BRT13 VDRM 800 V
RMS on-state current ITRMS 300 mA
Single cycle surge current 50 Hz ITSM 3A
Power dissipation Pdiss 600 mW
Parameter Test condition Symbol Value Unit
Max. power dissipation Ptot 630 mW
Ambient temperature Tamb - 40 to + 100 °C
Storage temperature Tstg - 40 to + 150 °C
Insulation test voltage 1)
between input/output circuit
(climate in acc. with DIN 40046,
part 2, Nov. 74)
VISO 5300 VRMS
Reference voltage in acc. with
VDE 0110 b
Vref 500 VRMS
Reference voltage in acc. with
VDE 0110 b (insulation group C)
Vref 600 VDC
Creepage resistance (in acc.
with DIN IEC 112/VDE 0303,
part 1)
(group IIIa acc. to DIN VDE
0109)
CTI 175
Insulation resistance VIO = 500 V, Tamb = 25 ° C RIO ≥ 1012 Ω
VIO = 500 V, Tamb = 100 ° C RIO ≥ 1011 Ω
DIN humidity category,
DIN 40 040
F
Creepage distance
(input/output circuit)
≥ 7.2 mm
Clearance (input/output circuit) ≥ 7.2 mm
BRT11/ 12/ 13
Document Number 83689
Rev. 1.4, 11-Apr-05
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
2) Static air, SITAC soldered in pcb or base plate.
Output
2) Static air, SITAC soldered in pcb or base plate.
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage IF = 10 mA VF1.1 1.35 V
Reverse current VR = 6 V IR10 µA
Thermal resistance 2) junction - ambient Rthja 750 °C/W
Parameter Test condition Symbol Min Ty p. Max Unit
Critical rate of rise of off-state
voltage
VD = 0.67 VDRM, TJ = 25 °C dV/dtcr 10 kV/µs
VD = 0.67 VDRM, TJ = 80 °C dV/dtcr 5kV/µs
Critical rate of rise of voltage at
current commutation
VD = 0.67 VDRM, TJ = 25 °C,
dI/dtcrq ≤ 15 A/ms
dV/dtcrq 10 kV/µs
VD = 0.67 VDRM, TJ = 80 °C,
dI/dtcrq ≤ 15 A/ms
dV/dtcrq 5kV/µs
Critical rate of rise of on-state
current
dI/dtcr 8A/µs
Pulse current tp ≤ 5 µs, f 0 100 Hz,
dItp/dt ≤ 8 A/µs
Itp 2A
On-state voltage IT = 300 mA VT2.3 V
Off-state current TC = 80 °C, VDRM ID0.5 100 µA
Holding current VD = 10 V IH80 500 µA
Thermal resistance 2) junction -
ambient
RthJA Rthja 125 °C/W
Parameter Test condition Symbol Min Ty p. Max Unit
Trigger current VD = 10 V, F - Versions IFT 1.2 mA
VD = 10 V, H - Versions IFT 0.4 2 mA
VD = 10 V, M - Versions IFT 0.8 3 mA
Trigger current temperature
gradient
∆IFT/∆Tj714µA/°C
Capacitance (input-output) VR = 0 V, f = 1 kHz CIO 2pF
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4
Document Number 83689
Rev. 1.4, 11-Apr-05
BRT11/ 12/ 13
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Typical Trigger Delay Time
Figure 2. Power Dissipation 40 to 60 Hz Line Operation
Figure 3. Typical Off-State Current
17239
t
gd
=
f
(
I
F
/
I
FT25°C
)
V
D
=200V
17240
P
tot= (
I
TRMS
)
17241
I
D=
f
(
T
j)
V
D=800V
Figure 4. Pulse Trigger Current
Figure 5. Typical Input Characteristics
Figure 6. Typical Output Characteristics
17242
I
FTN=
f
(
t
pIF)
I
FTN normalized to
I
FT refering
to
t
pIF ≥1m
V
op=220V,
f
= 4 0 ...60Hz typ.
17243
I
F
=ƒ(
V
F
)
17244
I
T
=ƒ(
V
T
)
BRT11/ 12/ 13
Document Number 83689
Rev. 1.4, 11-Apr-05
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in Inches (mm)
Figure 7. Current Reduction
17245
I
TRMS = ƒ(
T
A)
R
thJA = 125 K/W 3)
Figure 8. Current Reduction
17246
I
TRMS
=ƒ(
T
PIN5
)
R
thJ-PIN5 = 16,5 K/W 4)
i178014
.008 (.20)
.012 (.30)
.130 (3.30)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.033 (0.84) typ.
.300 (7.62)
typ.
.033 (0.84) typ.
.100 (2.54) typ
.039
(1.00)
Min.
.018 (0.46)
.020 (0.51)
.048 (1.22)
.052 (1.32)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ .
ISO Method A
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6
Document Number 83689
Rev. 1.4, 11-Apr-05
BRT11/ 12/ 13
Vishay Semiconductors
min.
.315 (8.00)
.020 (.51)
.040 (1.02)
.300 (7.62)
ref.
.375 (9.53)
.395 (10.03)
.012 (.30) typ.
.0040 (.102)
.0098 (.249)
15° max.
Option 9
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.307 (7.8)
.291 (7.4)
.407 (10.36)
.391 (9.96)
Option 6
.315 (8.0)
MIN.
.300 (7.62)
TYP.
.180 (4.6)
.160 (4.1)
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.028 (0.7)
MIN.
Option 7
18450
BRT11/ 12/ 13
Document Number 83689
Rev. 1.4, 11-Apr-05
Vishay Semiconductors
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
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Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
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therein, which apply to these products.
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