DATE NAME
DRAWN
CHECKED
APPROVED
DWG.NO.
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
Date :
H04-004-05
2SK4004-01MR
MS5F5983
MS5F5983
1 / 18
Power MOSFET
Jan.-31-2005
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
Jan.-31-'05
Jan.-31-'05
Jan.-31-'05
a
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
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for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
Revised Records
Date Classification
Index
Content Drawn
Checked Checked Approved
enactment
Jan.-31
2005
a
July.-3
2006 Revision Revised RDS(on)-tch
graph.
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for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
1.Scope This specifies Fuji Power MOSFET 2SK4004-01MR
2.Construction N-Channel enhancement mode power MOSFET
3.Applications for Switching
4.Outview TO-220F Outview See to 8/18 page
5.Absolute Maximum Ratings at Tc=25
C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
VDS 500 V
VDSX 500 V VGS=-30V
Continuous Drain Current IDA
Pulsed Drain Current IDP ± 36.0 A
Gate-Source Voltage VGS ± 30 V
IAR 9.0 A
EAS mJ
EAR mJ
Maximum Drain-Source dV/dt dVDS/dt kV/μs
Peak Diode Recovery dV/dt dV/dt kV/μs
Tc=25°C
2.16 Ta=25°C
Operating and Storage Tch 150
C
Temperature range Tstg -55 to +150 C
Isolation Voltage VISO kVrms
6.Electrical Characteristics at Tc=25
C (unless otherwise specified)
Static Ratings
Description Symbol Conditions min. typ. max. Unit
Drain-Source ID=250μA
Breakdown Voltage BVDSS VGS=0V 500 - - V
Gate Threshold ID=250μA
Voltage VGS(th) VDS=VGS 2.5 - 3.5 V
Zero Gate Voltage VDS=500V
VGS=0V Tch=25°C - - 25
Drain Current IDSS VDS=400V
VGS=0V Tch=125°C - - 250
Gate-Source VGS= ± 30V
Leakage Current IGSS VDS=0V - - 100 nA
Drain-Source ID=4.5A
On-State Resistance RDS(on) VGS=10V - 0.65 0.85 Ω
9.0
5
Drain-Source Voltage
Note *2
Note *3
PD48
Repetitive and Non-repetitive
Maximum Avalanche Current
349
Repetitive
Maximum Avalanche Energy 4.8
μA
Note *1
Non-Repetitive
Maximum Avalanche Energy
Note *4
20 VDS≦500V
2t=60sec
f=60Hz
WMaximum Power Dissipation
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for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
Dynamic Ratings
Description Symbol Conditions min. typ. max. Unit
Forward ID=4.5A
Transconductance gfs VDS=25V 6.0 12.0 - S
Input Capacitance Ciss VDS=25V - 800 1200
Output Capacitance Coss VGS=0V - 100 150
Reverse Transfer f=1MHz 6.0 9 pF
Capacitance Crss -
td(on) Vcc=300V - 12 18
Turn-On Time tr VGS=10V - 5.6 8.4
td(off) ID=4.5A - 40 60 ns
Turn-Off Time tf RGS=10Ω - 8.0 12
Total Gate Charge QGVcc=250V - 24 36
Gate-Source Charge QGS ID=9.0A - 7.0 10.5 nC
Gate-Drain Charge QGD VGS=10V - 6.0 9.0
Reverse Diode
Description Symbol Conditions min. typ. max. Unit
Diode Forward IF=9.0A
On-Voltage VSD VGS=0V Tch=25°C - 0.95 1.43 V
Reverse Recovery IF=9.0A
Time trr VGS=0V - 0.5 - μs
Reverse Recovery -di/dt=100A/μs
Charge Qrr Tch=25°C - 4.5 - μC
7.Thermal Resistance
Description Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) 2.604
C/W
Channel to Ambient Rth(ch-a) 58 C/W
Note *1 : Tch≦150°C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25℃,IAS=4.0A,L=40.0mH,Vcc=50V,RG=50Ω,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
See to the 'Maximum Avalanche Energy' graph of page 17/18.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Maximum Transient Thermal impedance' graph of page 18/18.
Note *4 : IF≦-ID,-di/dt=50A/μs,Vcc≦BVDSS,Tch≦150°C
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
Fig.1 Test circuit
Fig.2 Operating waveforms
50ΩD.U.T
L
Vcc
-15V
0
BVDSS
IDP
VGS
ID
VDS
+10V
Vcc=50V
Single Pulse Test
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a
8.Reliabilitytest items
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conform to EIAJED4701
/
0 method104
standards.
Test items required without fail
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (
Solder Dipping
,
260
±
5
°
C(265
°
Cmax.),10
±
1sec,2 times)
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 Terminal Pull force
Strength TO-220,TO-220F : 10N EIAJ
(Tensile) TO-3P,TO-3PF,TO-247 : 25N ED4701/400 15
TO-3PL : 45N method 401
T-Pack,K-Pack : 10N
Force maintaining duration :30±5sec
2 Terminal Load force
Strength TO-220,TO-220F : 5N EIAJ
(Bending) TO-3P,TO-3PF,TO-247 : 10N ED4701/400 15
TO-3PL : 15N method 401
T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
3 Mounting Screwing torque value: (M3) EIAJ (0:1)
Strength TO-220,TO-220F : 40±10N・cm ED4701/400 15
TO-3P,TO-3PF,TO-247 : 50±10N・cm method 402
TO-3PL : 70±10N・cm
4 Vibration frequency : 100Hz to 2kHz EIAJ
Acceleration : 200m/s2ED4701/400 15
Sweeping time : 4min. method 403
48min. for each X,Y&Z directions.
5 Shock Peak amplitude: 15km/s2EIAJ
Duration time : 0.5ms ED4701/400 15
3times for each X,Y&Z directions. method 404
6 Solderability Solder temp. : 2455C
Immersion time : 5
0.5sec
Each terminal shall be immersed in ----- 15
the solder bath within 1 to 1.5mm from
the body.
7 Resistance to Solder temp. : 2605CEIAJ
Soldering Heat Immersion time : 101sec ED4701/300 15
Number of times : 1times method 302
Mechanical test methodsMechanical test methods
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a
Failure Criteria Symbols Unit
Lower Limit Upper Limit
Breakdown Voltage BVDSS LSL ----- V
Zero gate Voltage Drain-Source Current IDSS ----- USL A
Gate-Source Leakage Current IGSS ----- USL A
Gate Threshold Voltage VGS(th) LSL USL V
Drain-Source on-state Resistance RDS(on) ----- USL
Forward Transconductance gfs LSL ----- S
Diode forward on-Voltage VSD ----- USL V
Marking
Soldering ----- With eyes or Microscope -----
and other damages
* LSL : Lower Specification Limit * USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Item Failure Criteria
Characteristics
Outview
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 High Temp. Temperature : 150+0/-5°C EIAJ 22
Storage Test duration : 1000hr ED4701/200
method 201
2 Low Temp. Temperature : -55+5/-0°C EIAJ 22
Storage Test duration : 1000hr ED4701/200
method 202
3 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22
Storage Test duration : 1000hr method 103
4 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22
BIAS Bias Voltage : VDS(max) * 0.8 method 103
Test duration : 1000hr
5 Unsaturated Temperature : 130±2°C EIAJ (0:1)
Pressurized Relative humidity : 85±5% ED4701/100 22
Vapor Vapor pressure : 230kPa method 103
Test duration : 48hr
6 Temperature High temp.side : 150±5°C/30min. EIAJ
Cycle Low temp.side : -55±5°C/30min. ED4701/100 22
RT : 5°C
〜
35°C/5min.
method 105
Number of cycles : 100cycles
7 Thermal Shock Fluid : pure water(running water)
High temp.side : 100+0/-5°C EIAJ 22
Low temp.side : 0+5/-0°C ED4701/300
Duration time : HT 5min,LT 5min method 307
Number of cycles : 100cycles
8 Intermittent ΔTc=90degree EIAJ
Operating Tch≦Tch(max.) ED4701/100 22
Life Test duration : 3000 cycle method 106
9 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Gate-source) Bias Voltage : +VGS(max) ED4701/100 22 (0:1)
Test duration : 1000hr method 101
10 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Drain-Source) Bias Voltage : VDS(max) ED4701/100 22
Test duration : 1000hr method 101
Climatic test methodsEndurance test methods
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
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This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
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9.Cautions
･Although FujiElectric iscontinuallyimprovingproduct quality andreliability,asmall percentage of
semiconductorproductsmaybecomefaulty.WhenusingFujiElectricsemiconductorproductsinyour
equipment,you arerequested to take adequatesafety measurestoprevent the equipmentfrom causing
physicalinjury,fire,orotherproblemin caseany of theproductsfail. Itis recommendedto makeyour
design fail-safe,flameretardant,andfreeofmalfunction.
･The products describedin thisSpecificationare intendedforuse inthe followingelectronicandelectrical
equipmentwhichhasnormalreliabilityrequirements.
･Computers ･OAequipment ･Communicationsequipment(Terminaldevices)
･Machinetools ･AVequipment ･Measurementequipment
･Personalequipment ･Industrialrobots ･Electricalhomeappliances etc.
･The products describedin thisSpecificationare not designedormanufacturedtobeusedinequipmentor
systemsusedunderlife-threateningsituations.Ifyouareconsi
deringusing theseproductsinthe equipment
listedbelow,firstcheck thesystem constructionand requiredreliability, and take adequatesafetymeasures
suchasa backupsystem toprevent the equipment frommalfunctioning.
･Backbonenetworkequipment ･Transportation equipment(automobiles,trains,ships,etc.)
･Traffic-signalcontrolequipment ･Gasalarms,leakagegasauto breakers
･Submarine repeaterequipment ･Burglaralarms,fire alarms,emergency equipment
･Medicalequipment ･Nuclearcontrolequipment etc.
･DonotusetheproductsinthisSpecificationforequipment requiringstrictreliabilitysuchas(butnotlimited
to):
･Aerospaceequipment ･Aeronauticalequipment
10.Warnings
･The MOSFETs should be used inproductswithintheirabsolutemaximum rating(voltage,current,
temperature,etc.).
･The MOSFETsmaybedestroyed if usedbeyondthe rating.
･Weonlyguaranteethenon-repetitive andrepetitiveAvalanchecapability and notforthecontinuous
Avalanchecapability whichcan be assumedas abnormalcondition .Please notethedevicemaybe
destructedfromtheAvalancheoverthe specifiedmaximumrating.
･The equipmentcontaining MOSFETs shouldhave adequatefuses orcircuitbreakerstoprevent the
equipmentfromcausing secondarydestruction(ex.fire,explosionetc…).
･UsetheMOSFETswithintheirreliabilityandlifetimeunder certainenvironments or conditions. The
MOSFETsmay fail beforethetargetlifetimeofyourproductsif usedundercertain reliabilityconditions.
･Becareful when handlingMOSFETsforESD damage. (Itisanimportant consideration.)
･ When handling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals.
･It isrecommended thatany handling ofMOSFETs isdoneongrounded electricallyconductivefloorand
tablemats.
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
･BeforetouchingaMOSFETterminal,Dischargeany staticelectricity from yourbodyandclothesby
groundingoutthroughahigh impedanceresistor (about 1M
)
･Whensoldering, in orderto protecttheMOSFETsfrom staticelectricity, groundthesolderingironor
soldering baththrough alowimpedance resistor.
･Youmust design theMOSFETstobeoperated withinthe specifiedmaximum ratings(voltage,current,
temperature, etc.) topreventpossible failureordestruction of devices.
･Considerthepossibletemperaturerise notonly forthechannel andcase,but alsofor theouter leads.
･Do not directly touch theleadsorpackageoftheMOSFETswhilepowerissuppliedor duringoperationin
ordertoavoid electricshockand burns.
･TheMOSFETsaremadeofincombustiblematerial.However,ifaMOSFETfails,itmayemitsmoke or
flame.Also,operatingtheMOSFETsnearanyflammableplaceormaterialmaycausetheMOSFETsto
emitsmokeorflameincasethe MOSFETsbecomeeven hotter duringoperation. Designthe arrangement
topreventthe spread offire.
･TheMOSFETs should not used in anenvironmentinthepresenceofacid,organic matter,orcorrosive
gas(hydrogen sulfide, sulfurousacidgas etc.)
･TheMOSFETs should notused in anirradiatedenvironmentsincethey arenotradiation-proof.
Installation
･Solderinginvolvestemperatureswhichexceedthedevicestorage temperature rating.Toavoid device
damageand toensurereliability,observethe followingguidelinesfromthequalityassurance standard.
Soldertemperatureand duration (through-holepackage)
Soldertemperature Duration
2605C 101 seconds
350
10
C 3.5
0.5seconds
･Theimmersion depthof the leadshouldbasicallybe upto thelead stopper andthe distanceshouldbea
maximum of 1.5mmfrom the device.
･Whenflow-soldering,be careful toavoidimmersingthepackage inthesolderbath.
･Refertothefollowingtorquereferencewhenmountingthedevice ona heatsink. Excess torque applied to
themountingscrewcausesdamageto the deviceand weak torquewill increasethethermalresistance,
bothofwhichconditionsmaydestroythedevice.
Table1:Recommendedtightening torques.
Packagestyle Screw Tighteningtorques Note
TO-220
TO-220F M3 30 –50Ncm
TO-3P
TO-3PF
TO-247 M3 40 –60Ncm
TO-3PL M3 60–80Ncm
flatness:<=±30
m
roughness:<=10m
Plane off theedges :
C<=1.0mm
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
･The heat sink should have a flatness within±30μm and roughness within 10μm. Also, keep the tightening
torquewithinthelimitsofthisspecification.
･Improperhandlingmaycauseisolationbreakdownleadingto a critical accident.
ex.) Over planeofftheedgesof screwhole. (RecommendedplaneofftheedgeisC<1.0mm)
･Werecommendthe useof thermal compoundto optimize the efficiency ofheat radiation.It isimportantto
evenlyapplythecompoundand toeliminate anyair voids.
Storage
･TheMOSFETsmustbestoredat astandardtemperatureof 5to35ｰC andrelativehumidity of 45to75%.
･Ifthestorage areaisverydry,a humidifiermaybe required. Insuchacase, use onlydeionizedwateror boiled
water,sincethechlorineintapwatermaycorrodetheleads.
･TheMOSFETs should notbesubjectedtorapidchangesintemperaturetoavoidcondensation on thesurface
of theMOSFETs.ThereforestoretheMOSFETsinaplacewherethetemperatureissteady.
･TheMOSFETs should notbestoredontopof eachother,sincethismaycauseexcessiveexternal forceonthe
case.
･TheMOSFETs shouldbestoredwiththeleadterminalsremaining unprocessed.Rustmaycausepresoldered
connectionstofailduringlaterprocessing.
･TheMOSFETs shouldbestoredin antistaticcontainersor shipping bags.
11.Appendix
･This products doesnotcontainPBBs(PolybrominatedBiphenyl)or PBDEs(Polybrominated DiphenylEther ),
substances.
･This products doesnotcontainClass-IODSandClass-IIODSsubstancesset forceby ‘Clean Air Act of US’
law.
･If you haveanyquestions aboutanypartofthisSpecification,pleasecontactFuji
Electricoritssales agentbeforeusing theproduct.
･Neither Fujinorits agentsshallbeheldliableforanyinjurycausedby usingtheproducts
notin accordancewiththe instructions.
･Theapplicationexamplesdescribedinthis specificationaremerelytypical usesof Fuji
Electricproducts.
･This specificationdoes notconferany industrial propertyrightsor other rights, nor
constitute alicense forsuchrights.
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
0 25 50 75 100 125 150
0
10
20
30
40
50
60
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [C]
0 2 4 6 8 10 12 14 16 18 20 22
0
2
4
6
8
10
12
14
16
18
20
20V 10V
6.0V
5.5V
5.0V
4.5V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25 C
VGS=4.0V
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
0.1 1 10
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C
012345678910
0.01
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
0 2 4 6 8 10 12 14 16 18 20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
6.0V
RDS(on) [ ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 s pulse test,Tch=25 C
10V
20V
5.5V
5.0V4.5V
VGS=
4.0V
-50 -25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
RDS(on) [ ]
Tch [C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4.5A,VGS=10V
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
VGS(th) [V]
Tch [C]
0 5 10 15 20 25 30 35 40 45
0
2
4
6
8
10
12
14
16
18
20
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=9A,Tch=25 C
VGS [V]
400V
250V
Vcc= 100V
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
10-1 100101102103
1p
10p
100p
1n
10n
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25 C
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
IAS=4A
IAS=9A
IAS=6A
EAS [mJ]
starting Tch [C]
Maximum Avalanche Energyvs. starting Tch
EAS=f(starting Tch):Vcc=50V
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for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
a
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25C,Vcc=50V
Avalanche Current IAV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [℃/W]
t [sec]