Diodes RB471E @Applications Low current rectification @Features 1)Designed for mounting on small surface areas (SMD5) 2)High reliability @Construction Silicon epitaxial schottky Barrier Diode @External dimensions (Units: mm) 40.1 g) 218 0.06 |S ot 3! (1) 2) SMD5 @Absolute maximum ratings (Ta=25C) Parameter Symbo! Limits Unit Peak reverse voltage Va 20 Vv Peak reverse voltage Va 10 Vv Mean rectifying current lo 0.1 A Peak forward surge current lg 1 A Junction temperature T 125 c Storage temperature Tstg 40~125 c * 60 Hz for 1 A> @Electrical characteristics (Ta=25C) Parameter Symbol | Min. Typ. Max. Unit Conditions Vet _ 0.28 0.34 v le=10mA Forward voltage Ve ~ 0.45 0.55 Vv lF=100mA Reverse current Ir _ 1 30 uA Va==10V Capacitance between terminals} Cr _ 6.0 - pF Va=10V, 1MHz * Special precautions required concerning static electricity when being handled. 119 Smoll signals a Schottky barrier diodesDiodes RB471E @Electrical characteristic curves (Ta=25C) 1 < Typ Typ. ad measurement measurement rs = < tm 8 = = z : : @ 10m Z 100 - E 2 5 ira Q im 2 04 2 z iy a = & us 3 100 BR 3 = 2 104 Qin = o1 Oo Of 02 03 04 05 O06 O7 o 5 tt 1 2 2 30 3 So 5 10 15 20 25 FORWARD VOLTAGE : Ve {V) REVERSE VOLTAGE: Va (V) REVERSE VOLTAGE: Ve (V) Fig. 1 Forward temperature Fig. 2 Reverse temperature Fig. 3 Capacitance between characteristic characteristic terminalis characteristic 120 RENT