D2SBAL| @ 4etikR OUTLINE DIMENSIONS mi 2 27 ARR BLS Bey had () Type No., Class Date code 20103 3. 600V 1.5A C25. : | he 7 D2SBA // : S60 68 = + _ _ 2 5102 + ~ _ a ~ rt 1.529? | a | +02 8 : + yiol | | | 8 0.5201 x: I B ~ ' 1 1 1 yi 1 u 5 5 QO Unit : mm BtKR RATINGS fEXtRARH Absolute Maximum Ratings " #5 | x ft ee penny BERL item Symbol Cenditions Type Ne. Bie BA | P2SBAS Unit RIF iE ] meray y Storage Temperature Tstg 7 40~150 C fe Mba . : Operating Junction Temperature Ti 150 c A SIE ae Maximum Reverse Voltage VRM 200 600 Vv Le ee To | DOHz IF SkIR, HARB, 7 Uy b BCR, Ta=25C is A Average Rectified Forward Current 50Hz sine wave, R-load, On glass-epoxi substrate, Ta=25C th A SAY 2 IEE Irsm 50Hz Fake, SEMAN L 14 7 Ltt A SANA, Tj=25C 60 A Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25C . ike 2 HUSH A 2 =9n 2 Current Squared Time lt | ilmsSt<10ms Tco=25C 16 As Baty) - MAM Electrical Characteristics (T/=25C) ME JAE | _ 2X ARIE, 1 BF OPE MAX 1 Forward Voltage VF | Ir=0.75A, Pulse measurement, Rating of per diode . 4.05 Vv aH iol WW ABE, 1 REY ORES fl MAX 190 Reverse Current Ir | VR=VRM, Pulse measurement, Rating of per diode _ : | A 631 Sep -U- FA MAX 10 SAFE j Between junction and lead CS 4 C/W Thermal Resistance 63 Heth - FAM Max 47 J3 | Between junction and ambient aM@ HtER CHARACTERISTIC DIAGRAMS Wy eee BARA tARU 7 RET Forward Voltage Power Dissipation Surge Forward Current Capability 10 TL=150C( WA ie Iv CA) pulse test | per one diode; WA @ HE Vr (VJ t BH P Cw) HABE Io (A) {sine wave Tj=150C 70 sine wave non-repetitive C A TY vB Irsm (AJ HEB (cycle) F4b-F4+GAT Talo Derating Curve Talo on glass-epoxi substrate P. soldering land 3mm sine wave R-load in HARE To (A) BGiabe Ta (CC)