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FDD4243 40V P-Channel PowerTrench(R) MOSFET -40V, -14A, 44m Features General Description Max rDS(on) = 44m at VGS = -10V, ID = -6.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench(R) technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Max rDS(on) = 64m at VGS = -4.5V, ID = -5.5A High performance trench technology for extremely low rDS(on) RoHS Compliant Application Inverter Power Supplies S D G S G D -PA K -2 52 TO (TO -252) D MOSFET Maximum Ratings TC = 25C unless otherwise noted Parameter Symbol VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current ID V -Continuous (Silicon limited) TC= 25C (Note 1) -24 -Continuous TA= 25C (Note 1a) -6.7 -14 A -60 (Note 3) Power Dissipation TC= 25C Power Dissipation TJ, TSTG 20 TC= 25C -Pulsed PD Units V -Continuous (Package limited) Single Pulse Avalanche Energy EAS Ratings -40 84 42 (Note 1a) Operating and Storage Junction Temperature Range 3 -55 to +150 mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 3.0 (Note 1a) 40 C/W Package Marking and Ordering Information Device Marking FDD4243 (c)2007 Fairchild Semiconductor Corporation FDD4243 Rev. 1.3 Device FDD4243 Package D-PAK(TO-252) 1 Reel Size 13'' Tape Width 16mm Quantity 2500 units www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench(R) MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = -250A, referenced to 25C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V -40 -32 VDS = -32V, VGS = 0V mV/C -1 TJ = 125C -100 VGS = 20V, VDS = 0V A 100 nA -3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250A, referenced to 25C 4.7 VGS = -10V, ID = -6.7A 36 44 rDS(on) Drain to Source On Resistance VGS = -4.5V, ID = -5.5A 48 64 VGS = -10V, ID = -6.7A, TJ = 125C 53 69 VDS = -5V, ID = -6.7A 16 gFS Forward Transconductance -1.4 -1.6 mV/C m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz 1165 1550 pF 165 220 pF 90 135 pF f = 1MHz 4 VDD = -20V, ID = -6.7A VGS = -10V, RGEN = 6 6 12 ns 15 26 ns 22 35 ns 7 14 ns 21 29 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = -20V, ID = -6.7A VGS = -10V 3.4 nC 4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -6.7A (Note 2) IF = -6.7A, di/dt = 100A/s 0.86 1.2 V 29 43 ns 30 44 nC Notes: 1: RJA is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJC is determined by the user's board design. a. 40C/W when mounted on a 1 in2 pad of 2 oz copper b. 96C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting TJ = 25C, L = 3mH, IAS = 7.5A, VDD = 40V, VGS = 10V. FDD4243 Rev. 1.3 2 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 50 40 3.5 VGS = -10V VGS = -4.5V VGS = - 6V VGS = -5V VGS = -4V 30 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 20 VGS = - 3.0V 10 0 0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 60 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 ID = -6.7A VGS = -10V 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 40 TJ = 150oC TJ = 25oC 30 20 TJ = -55oC 10 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 VGS = -6V 2.0 1.5 VGS = -10V 1.0 0.5 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0 10 20 30 40 -ID, DRAIN CURRENT(A) 50 60 ID = -6.7A 100 80 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX TJ = 125oC 60 TJ = 25oC 40 20 2 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 30 VGS = 0V 10 TJ = 150oC TJ = 25oC 1 TJ = -55oC 0.1 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics FDD4243 Rev. 1.3 VGS = -5V Figure 4. On-Resistance vs Gate to Source Voltage 60 50 2.5 120 1.8 1.6 VGS = -4V VGS = -4.5V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics VGS = -3.0V 3.0 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 3000 ID = -6.7A 6 CAPACITANCE (pF) VDD = -10V 8 VDD = -20V VDD = -30V 4 2 0 1000 Coss 100 0 4 8 12 16 20 50 0.1 24 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Crss 30 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 25 8 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) f = 1MHz VGS = 0V Figure 8. Capacitance vs Drain to Source Voltage 10 6 TJ = 25oC 4 2 TJ = 125oC 20 VGS = -10V 15 10 Limited by Package VGS = -4.5V 5 o RJC = 3.0 C/W 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 10 0 25 30 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 P(PK), PEAK TRANSIENT POWER (W) 100us 10 1ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED 100ms TC = 25OC 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDD4243 Rev. 1.3 75 TC, CASE TEMPERATURE ( C) 100 0.1 0.5 50 o Figure 9. Unclamped Inductive Switching Capability -ID, DRAIN CURRENT (A) Ciss FOR TEMPERATURES VGS = -10V ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 150 - TC ---------------------125 I = I25 TC = 25oC 100 SINGLE PULSE 30 -5 10 -4 10 -3 -2 -1 10 10 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZJC 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.01 SINGLE PULSE 0.003 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD4243 Rev. 1.3 5 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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