80812 TKIM/30712PA TKIM TC-00002731 No.8699-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
July, 2013
VEC2315
P-Channel Power MOSFET
–60V, –2.5A, 137mΩ, Dual VEC8
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
• ON-resistance RDS(on)1=105mΩ(typ.)
• 4V drive
• High-density mounting
• Protection diode in
• Halogen free compliance
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID--2.5 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --10 A
Allowable Power Dissipation PD
When mounted on ceramic substrate (900mm
2
×0.8mm) 1unit
0.9 W
Total Dissipation PT
When mounted on ceramic substrate (900mm
2
×0.8mm)
1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7012-002
Ordering number : EN8699A
2.9
0.65
2.8
0.250.25 2.3
0.75
0.07
0.3
1234
8765 0.15
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
VEC8
VEC2315-TL-H
Product & Package Information
• Package : VEC8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
TL
UM
LOT No.
8765
1234
VEC2315
No.8699-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --60 V
Zero-Gate Voltage Drain Current IDSS V
DS=--60V, VGS=0V --1 μA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance | yfs |VDS=--10V, ID=--1.5A 3.9 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=--1.5A, VGS=--10V 105 137 mΩ
RDS(on)2 ID=--0.75A, VGS=--4.5V 128 180 mΩ
RDS(on)3 ID=--0.75A, VGS=--4V 138 194 mΩ
Input Capacitance Ciss VDS=--20V, f=1MHz 420 pF
Output Capacitance Coss 54 pF
Reverse Transfer Capacitance Crss 44 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
6.4 ns
Rise Time tr 9.8 ns
Turn-OFF Delay Time td(off) 65 ns
Fall Time tf36 ns
Total Gate Charge Qg VDS=--30V, VGS=--10V, ID=--2.5A 11 nC
Gate-to-Source Charge Qgs 1.4 nC
Gate-to-Drain “Miller” Charge Qgd 2nC
Diode Forward Voltage VSD IS=--2.5A, VGS=0V --0.83 --1.2 V
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
VEC2315-TL-H VEC8 3,000pcs./reel Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --1.5A
RL=20Ω
VDD= --30V
VOUT
VIN
0V
--10V
VIN
VEC2315
--2
--1
--5
--3
--4
0
0
--0.5
--1.5
--2.0
--1.0
--2.5
0
--1.0--0.8--0.6--0.1 --0.2 --0.4 --0.9--0.7--0.3 --0.5
IT15911
0 --1.0--0.5 --2.0--1.5 --3.0--2.5 --3.5
IT15912
Ta=75°C
--25°C
VGS= --2.5V
VDS= --10V
--3.5V
--16.0V
25°C
--10.0V
--4.0V
--4.5V
--6.0V
--3.0V
ID -- VGS
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
VEC2315
No.8699-3/7
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ambient Temperature, Ta -- °C
RDS(on) -- TaRDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
IS -- VSD
Source Current, IS -- A
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
| yfs | -- ID
Forward T ransfer Admittance, | yfs | -- S
SW Time -- ID
Switching Time, SW Time -- ns
Drain Current, ID -- A
Ciss, Coss, Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
0
03
--1
--2
5
--3
--4
7
--5
--6
--7
9
--8
--10
--9
1112 4 6 8 10
VDS= --30V
ID= --2.5A
IT15919
--60
0
50
100
150
200
300
250
--40 --20 0 20 40 60 80 100 120 140 160
VGS= --4.5V, ID= --0.75A
VGS= --10.0V, ID= --1.5A
IT15914
0--2
200
--4
300
0
50
100
250
150
--6 --8 --12--10 --14 --16
Ta=25°C
ID= --1.5A
--0.75A
IT15913
0
2
5
7
--5
1000
100
7
5
3
3
2
2
--20--15--10 --25 --30 --35 --40 --45 --50 --55 --60
f=1MHz
IT15918
Ciss
Coss
Crss
--0.1
100
2
3
10
2
2
--1.0
227357 35
7
5
7
5
3
IT15917
td(on)
tr
VDD= --30V
VGS= --10V
tf
td(off)
--0.01 --0.4 --0.6 --0.8 --1.0 --1.2--0.2
--0.1
2
7
5
3
2
--1.0
2
7
7
5
3
VGS=0V
--0.01 --0.1
0.1 --1.0
2 3 57 2 3 57 2 3 5
1.0
2
7
5
3
2
10
7
5
3
2VDS= --10V
IT15915 IT15916
Ta= --25°C
--25°C
25°C
Ta=75°C
25°C
75°C
VGS= --4.0V, ID= --0.75A
7
5
3
IT15920
--0.01 --0.1
23 5 23 577--1.0
23 57 2
--0.01
2
--0.1
--1.0
--10
2
3
5
7
2
3
5
7
2
3
5
7
IDP= --10A (PW≤10μs)
ID= --2.5A
100μs
DC operation (Ta=25°C)
1ms
100ms
10ms
Operation in this area
is limited by RDS(on).
--10 --100
357
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
VEC2315
No.8699-4/7
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
0
020 40 60
1.0
0.6
0.2
0.8
0.9
0.4
80
1.2
140100 120 160
IT15921
1unit
When mounted on ceramic substrate
(900mm2×0.8mm)
Total dissipation
VEC2315
No.8699-5/7
Taping Specifi cation
VEC2315-TL-H
VEC2315
No.8699-6/7
Outline Drawing Land Pattern Example
VEC2315-TL-H
Mass (g) Unit
0.015
* For reference
mm Unit: mm
0.4
0.6
2.8
0.65
VEC2315
PS No.8699-7/7
Note on usage : Since the VEC2315 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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