April 1995
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
_______________________________________________________________________________
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter BS170 MMBF170 Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1MΩ)60 V
VGSS Gate-Source Voltage ± 20V
IDDrain Current - Continuous 500 500 mA
- Pulsed 1200 800
PDMaximum Power Dissipation 830 300 mW
Derate Above 25°C6.6 2.4 mW/°C
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
TLMaximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds 300 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistacne, Junction-to-Ambient 150 417 °C/W
BS170 Rev. C / MMBF170 Rev. D
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
S
D
G
© 1997 Fairchild Semiconductor Corporation
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 µA All 60 V
IDSS Zero Gate Voltage Drain Current VDS = 25 V, VGS = 0 V All 0.5 µA
IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V All 10 nA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA All 0.8 2.1 3V
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 200 mA All 1.2 5Ω
gFS Forward Transconductance VDS = 10 V, ID = 200 mA BS170 320 mS
VDS > 2 VDS(on), ID = 200 mAMMBF170 320
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 10 V, VGS = 0 V,
f = 1.0 MHz All 24 40 pF
Coss Output Capacitance All 17 30 pF
Crss Reverse Transfer Capacitance All 7 10 pF
SWITCHING CHARACTERISTICS (Note 1)
ton Turn-On Time VDD = 25 V, ID = 200 m A,
VGS = 10 V, RGEN = 25 ΩBS170 10 ns
VDD = 25 V, ID = 500 mA,
VGS = 10 V, RGEN = 50 ΩMMBF170 10
toff Turn-Off Time VDD = 25 V, ID = 200 m A,
VGS = 10 V, RGEN = 25 ΩBS170 10 ns
VDD = 25 V, ID = 500 mA,
VGS = 10 V, RGEN = 50 ΩMMBF170 10
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
BS170 Rev. C / MMBF170 Rev. D
BS170 Rev. C / MMBF170 Rev. D
012345
0
0.5
1
1.5
2
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
9.0
4.0
8.0
3.0
7.0
V = 10V
GS
DS
D
5.0
6.0
-50 -25 025 50 75 100 125 150
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 500mA
D
-50 -25 025 50 75 100 125 150
0.8
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 1 mA
D
V = V
DS GS
V , NORMALIZED
th
00.4 0.8 1.2 1.6 2
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V =4.0V
GS
D
R , NORMALIZED
DS(on)
7.0
4.5
10
5.0
6.0
9.0
8.0
00.4 0.8 1.2 1.6 2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
25°C
-55°C
D
V = 10V
GS
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with
Temperature.
0246810
0
0.4
0.8
1.2
1.6
2
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55°C
J 25°C 125°C
BS170 / MMBF170
BS170 Rev. C / MMBF170 Rev. D
-50 -25 0 25 50 75 100 125 150
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
J
BV , NORMALIZED
DSS
I = 100µA
D
0.2 0.4 0.6 0.8 11.2 1.4
0.001
0.005
0.01
0.05
0.1
0.5
1
2
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125°C
J
SD
S
25°C
-55°C
00.4 0.8 1.2 1.6 2
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I =500mA
DV = 25V
DS
1 2 3 5 10 20 30 50
1
2
5
10
20
40
60
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
G
D
S
VDD
RL
V
V
IN
OUT
VGS DUT
RGEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, V
out
ton toff
td(off) tf
tr
td(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage Variation
with Temperature.Figure 8. Body Diode Forward Voltage Variation with
Current and Temperature.
Figure 9. Capacitance Characteristics.Figure 10. Gate Charge Characteristics.
Figure 11. Switching Test Circuit.Figure 12. Switching Waveforms.
Typical Electrical Characteristics (continued)
BS170 / MMBF170
BS170 Rev. C / MMBF170 Rev. D
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.01
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = (See Datasheet)
θJAθJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t
1 t
2
0.0001 0.001 0.01 0.1 1 10 100 300
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = (See Datasheet)
θJAθJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t
1 t
2
1 2 5 10 20 30 60 80
0.005
0.01
0.05
0.1
0.5
1
2
3
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
V = 10V
SINGLE PULSE
T = 25°C
GS
A
RDS(ON) Limit
100ms
1ms
10ms
DC
1s
100us
10s
Figure 15. TO-92, BS170 Transient Thermal Response Curve.
Figure 16. SOT-23, MMBF170 Transient Thermal Response Curve.
1 2 5 10 20 30 60 80
0.005
0.01
0.05
0.1
0.5
1
2
3
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
V = 10V
SINGLE PULSE
T = 25°C
GS
A
RDS(ON) Limit
100ms
1ms
10ms
DC
1s
10s
100us
Figure 13. BS170 Maximum
Safe Operating Area.Figure 14. MMBF170 Maximum
Safe Operating Area.
Typical Electrical Characteristics (continued)
TO-92 Tape and Reel Data
March 2001, Rev. B1
©2001 Fairchild Semiconductor Corporation
TO-92 Packaging
Configuration: Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
EO70 box for
std option
FSCINT Label
530mm x 130m m x
83mm
Inter med iate box
10,000 units maximum
per
intermediate box
for std option
FSCINT Label
114mm x 102m m x 51mm
Immed iate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
CODE DESCRIPTION LEADCLIP
DIMENSION QUANTITY
J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BO X
J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX
NO EOL
CODE TO-92 STANDARD
STRAIGHT FOR: PKG 92, NO LEADCLIP 2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
375mm x 267m m x 375mm
Inter med iate Box
FSCINT
Label
Customized
Label
333mm x 231m m x 183mm
Inter med iate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Packing Style Qu antity EOL code
Reel A 2,000 D26Z
E2,000 D27Z
Ammo M 2,000 D74Z
P2,000 D75Z
U nit w eight = 0.22 g m
Reel we igh t with components = 1.04 kg
Amm o weig ht w ith co mp onents = 1.0 2 kg
Max q uantity p er intermed iate b ox = 1 0,000 uni ts
F63TNR
Label
5 Ammo boxes per
Inter med iate Box
Customized
Label
327mm x 158m m x 135mm
Immed iate Box
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SPEC REV:
B2
SPEC:
QTY:
10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORP ORATI ON
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
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TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK74 1B019
FS ID: PN 2 22N
D/C1: D9842 QTY1: SPEC REV:
SPEC:
QTY: 2000
D/C2: QTY2: CPN: N/F: F ( F63TNR)3
F63TNR Label sample
FSCINT Label sample
C
5 EO70 boxes per
intermediate Box
ustomized
Label
94 (NON PROELECTRON
SERIES), 96
L34Z TO-92 STANDARD
STRAIGHT FOR: PKG 94 NO LEADCLIP 2.0 K / BOX
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
TO-92 Tape and Reel Data, continued
September 1999, Rev. B
TO-92 Reeli ng Style
Configuration: Figure 2.0
Style “A”, D26Z, D70 Z (s/h)
Machine Op tion “A” (H)
Style “E ”, D2 7Z, D 71Z (s/ h)
Machine Option “E” (J)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLL ECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
TO-92 Radi al Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
ITEM DESCRIPTION
Base of Package to Lead Bend
Com p on en t Heig ht
Lead Clinch Height
Com p on en t Ba s e He ig ht
Com p on en t Al ig nm e nt ( sid e/s id e )
Com p on en t Al ig nm e nt ( front/b ac k )
Com p on en t Pitc h
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spr ead
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold - down Tape Wid th
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spr ing Ou t
SYMBOL
b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S
DIMENSION
0. 09 8 (m ax )
0. 92 8 (+ /- 0.02 5)
0. 63 0 (+ /- 0.02 0)
0. 74 8 (+ /- 0.02 0)
0. 04 0 (m ax )
0. 03 1 (m ax )
0. 50 0 (+ /- 0.02 0)
0. 50 0 (+ /- 0.00 8)
0. 15 0 (+ 0 .00 9, -0.0 10)
0. 24 7 (+ /- 0.00 7)
0. 10 4 (+ /- 0 . 01 0)
0. 01 8 (+ 0 .00 2, -0.0 03)
0. 42 9 (m ax )
0. 20 9 (+ 0 .05 1, -0.0 52)
0. 03 2 (+ /- 0.00 6)
0. 02 1 (+ /- 0.00 6)
0. 70 8 (+ 0 .02 0, -0.0 19)
0. 23 6 (+ /- 0.01 2)
0. 03 5 (m ax )
0. 36 0 (+ /- 0.02 5)
0. 15 7 (+ 0 .00 8, -0.0 07)
0. 00 4 (m ax )
Note : All dimensions are in in c hes.
ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM
Ree l Di am e ter D1 13.975 14 . 02 5
Arb or Hol e Di am et er (S ta nd ard) D2 1.16 0 1.200
(Small Hole) D2 0.650 0.700
Core Diameter D3 3.100 3.300
Hub Recess Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0.570
Flange to Flan ge Inner Width W2 1.630 1.690
Hub to Hub Center Width W3 2.090
Note: All dimensions are inches
TO-92 Tap e and Reel Taping
Dimension Configuration: Figure 4. 0
Ha
H1 HO
PO
P2
P1 F1
DO
P Pd
b
d
L1
LS
WO W2
W
t
t1
Hd
W1
TO-92 Reel
Configuration: Figure 5.0
User D ire c tion of Feed
SENSITI VE DEV ICES
ELECTROSTATIC
D1
D3
Customized Label
W2
W1 W3
F63 TNR Label
D4
D2
TO-92 Tape and Reel Data, continued
July 1999, Rev. A
January 2000, Rev. B
TO-92 Package Dimensions
TO-92; TO-18 Reverse Lead Form (J35Z Option)
(FS PKG Code 92, 94, 96)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.22
Note: All package 97 or 98 transistors are leadformed
to this configuration prior to bulk shipment. Order
L34Z option if in-line leads are preferred on package
97 or 98.
**;
* Standard Option on 97 & 98 package code
©2000 Fairchild Semiconductor International
SOT-23 Packaging
Confi gu ration: Figure 1.0
Components Leader Tape
500mm minimum or
125 emp ty pocket s
Tr ailer Tape
300mm minimum or
75 empty pocket s
SOT-23 Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SOT-23 Packaging Information
Standard
(no flow code) D87Z
Packaging type
Reel Si ze
TNR
7" Dia
TNR
13"
Qty per Reel/Tube/Bag 3,000 10,000
Bo x Di mensi on (mm) 187x107x183 343x343x64
Max qt y per B o x 24,000 30,000
Weight per unit (gm) 0.0082 0.0082
Weight per Reel (kg) 0.1175 0.4006
Human readable
Label
Human Read able Label
Human Readable Label sample
343mm x 342mm x 64mm
Intermediate box for L87Z Option
187mm x 107mm x 183mm
Intermediate Box for Standard Option
SOT-23 Unit Orientation
3P 3P 3P 3P
Human Readable
Label
Customized Label
Embossed
Carrier Tape
Antistatic Cover Tape
Packaging Description:
SOT-23
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Acti vated
Adhesive in nature) primaril y composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 uni t s per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter r eel. Thi s and some other opt i ons are
described in the Packaging Information table.
These full reel s are individually labeled and pl aced insi de
a standard intermediate made of recyclable corrugated
brown paper w it h a Fai r chil d l ogo pri nt i ng. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a labeled shipping box which
comes i n dif f erent sizes depending on the number of part s
shipped.
parts are shipped in tape. The carrier tape is
SOT-23 Tape and Reel Data
September 1999, Rev . C
©2000 Fairchild Semiconductor International
Dimensions are in mill imeter
Pkg type
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
SOT-23
(8mm)
3.15
+/-0.10 2.77
+/-0.10 8.0
+/-0.3 1.55
+/-0.05 1.125
+/-0.125 1.75
+/-0.10 6.25
min 3.50
+/-0.05 4.0
+/-0.1 4.0
+/-0.1 1.30
+/-0.10 0.228
+/-0.013 5.2
+/-0.3 0.06
+/-0.02
Dimensions are in inches and millimeters
Tape Size Reel
Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
8mm 7" Dia 7.00
177.8 0.059
1.5 512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 2.165
55 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 10.9
8m m 13" Dia 13.00
330 0.059
1.5 512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 4.00
100 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 10.9
See detail A A
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail A A
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotati onal and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectio nal View)
Component Rotation
User Direction of Feed
SOT-23 Embossed Carrier Tape
Configuration: Figure 3.0
SOT-23 Reel Con figuration: Figure 4.0
P1 A0
D1
FW
E1
E2
Tc
Wc
K0
T
B0
D0P0 P2
SOT-23 Tape and Reel Data, continued
September 1999, Rev . C
SOT-23 (FS PKG Code 49)
SOT-23 Package Dimensions
September 1998, Rev . A1
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Par t Weight per unit (gram): 0.0082
©2000 Fairchild Semiconductor International
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