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THYRISTORS
03P4MG,03P6MG
300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR
D ATA SHEET
Document No. D15290EJ4V0DS00 (4th edition)
Date Published February 2003 NS CP(K)
Printed in Japan 2002
The mar k ★
★★
★ shows major revised points.
DESCRIPTION
The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs
with an average on-state current of 300 mA. The repeat peak
off-state voltages (and reverse voltages) are 400 and 600 V.
FEATURES
• 400 and 600 V high-withstanding-voltage series of products
• The non-repetitive withstanding voltage is a high 700 V, making
it easy to harmonize the rise voltage of the surge absorber.
• High-sensitivity thyristor (IGT = 3 to 50
µ
A)
• Employs flame-retardant epoxy resin (UL94V-0)
APPLICATIONS
Leakage breakers, SSRs, various type of alarms, consumer
electronic equipments and automobile electronic components
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Ratings Unit Remarks
03P4MG 03P6MG
Non-repetiti ve P eak Reverse Voltage VRSM 700 700 V RGK = 1 kΩ
Non-repetiti ve P eak Off -st ate Voltage VDSM 700 700 V RGK = 1 kΩ
Repetitive Peak Reverse Voltage VRRM 400 600 V RGK = 1 kΩ
Repetitive Peak Off-state Voltage VDRM 400 600 V RGK = 1 kΩ
Average On-state Current IT(AV) 300 (TA = 30°C, Single half-wave,
θ
= 180°) mA Refer to Figure 10.
Effective On-state Current IT(RMS) 470 mA −
Surge On-state Current ITSM 8 (f = 50 Hz, Sine half-wave, 1 cycle) A Refer to Figure 2.
Fusing Current
∫
iT2dt 0.15 (1 ms ≤ t ≤ 10 ms) A2s−
Critic al Rate of On-st ate Current of Rise dIT/dt 20 A/
µ
s−
Peak Gate Power Dissi pation PGM 100 (f ≥ 50 Hz, Duty ≤ 10%) mW Refer to Figure 3.
Average Gate Power Dissipation PG(AV) 10 mW Refer to Figure 3.
Peak Gate Forward Current IFGM 100 (f ≥ 50 Hz, Duty ≤ 10%) mA −
Peak Gate Revers e Voltage VRGM 6V−
Junction Temperature Tj−40 to +125 °C −
Storage Temperature Tstg −55 t o +150 °C −
PACKAGE DRAWING (Unit: mm)
1.27 2.54
1.77 MAX.
4.2 MAX.
13
1.5
12.7 MIN. 5.5 MAX.
5.2 MAX.
φ
0.5
2
Electrode con nec tion
1: Gate
2: Anode
3: Cathode
*TC test bench-mark
Standard weight: 0.3 g
★
★★
★
Data Sheet D15290EJ4V0DS
2
03P4MG,03P6MG
ELECTRICAL CHARACTERISTICS (Tj = 25°C, RGK = 1 kΩ
ΩΩ
Ω)
Parameter Symbol Conditions Specifications Unit Remarks
MIN. TYP. MAX.
Non-repetiti ve P eak Reverse IRRM VRM = VRRM Tj = 25°C −−10
µ
A−
Current Tj = 125°C −−100
µ
A−
Non-repetiti ve P eak Off -st ate IDRM VDM = V DRM Tj = 25°C −−10
µ
A−
Current Tj = 125°C −−100
µ
A−
Critical Rate-of-rise of Off-state dVD/dt 10 −−V/
µ
s−
Voltage
Tj = 125°C, VDM = 3
2VDRM
On-state Voltage VTIT = 4 A −−2.2 V Refer to Figure 1.
Gate Trigger Current IGT VDM = 6 V , RL = 100 Ω3−50
µ
A−
Gate Trigger Voltage VGT VDM = 6 V , RL = 100 Ω−−0.8 V −
Gate Non-trigger V oltage VGD Tj = 125°C, VDM = 2
VDRM 0.2 −−V−
Holding Current IHVDM = 24 V, ITM = 4 A −−5mA −
Turn-off Time tqTj = 125°C, IT = 200 mA, −60 −
µ
s−
dIR/dt = 15 A/
µ
s, VR ≥ 25 V,
VDM = 2
3 VDRM, dV D/ dt = 10 V/
µ
s
Thermal Resist ance Rth(j-C) Junct i on-t o -case DC −−50 °C/W Refer t o Figure 14.
Rth(j-A) Juncti on-t o -am bi ent DC −−230 °C/W Refer to Figure 14.
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure 1. iT vs. υ
υυ
υT Characteristics Figure 2. ITSM Rating
On-state Current iT (mA)
MAX.
0123
T
j
= 125˚C
25˚C
10000
1000
100
10
On-state Voltage υT (V)
Surge On-state Current ITSM (A)
At initial, T
j
= 125˚C
I
TSM
10 ms 20 ms
14
12
10
8
6
4
2
01 10 100550
Cycles (N)
Data Sheet D15290EJ4V0DS 3
03P4MG,03P6MG
Figure 3. Gate Rating Figure 4. Example of Gate Characteristics
Gate Forward Voltage VFG (V)
P
G(AV)
= 10 mW
P
GM
= 100 mW
I
FG
= 100 mA
5.0
4.0
3.0
2.0
1.0
00 20 40 60 80 100 120
Gate Forward Current IFG (mA)
Gate Trigger Voltage VGT (V)
Tj = −40˚C
0˚C
25˚C
1.2
1.0
0.8
0.6
0.4
0.2
00 100 200 30050 150 250 350
Gate Trigger Current IGT (
µ
A)
Figure 5. IGT vs. TA Example of Characteristics Figure 6. VGT vs. TA E xample of Characteristics
Gate Trigger Current IGT (
µ
A)
100
10
1
0.1 −40 −20 0 40 8020 60 100 140120
Ambient Temperature TA (°C)
Gate Trigger Voltage VGT (V)
−40 −20 0 40 8020 60 100 140120
1.2
1.0
0.8
0.6
0.2
0.4
0
Ambient Temperature TA (°C)
Figure 7. iGS vs. τ
ττ
τ Example of Characteristics Figure 8. υ
υυ
υGT vs. τ
ττ
τ Example of Characteristics
Supply Gate Trigger Current iGS (mA)
T
A
= 25˚C
i
GS
R
GK
1 kΩ
10
5
1
0.5
0.11 10 1000100
Pulse Width τ (
µ
s)
Gate Trigger Voltage υGT (V)
T
A
= 25˚C
1 10 1000100
1.0
0.8
0.6
0.4
0.2
0
Pulse Width τ (
µ
s)
Data Sheet D15290EJ4V0DS
4
03P4MG,03P6MG
Figure 9. PT(AV) vs. IT(AV) Characteristics Figure 10. TA vs. IT(AV) Characteristics
Average On-state P ower Diss i pation PT(AV) (W)
30˚60˚90˚120˚
DC
Single Half-wave
0.7
0.6
0.5
0.4
0.3
0.2
0.1
00 100 200 400300 500
= 180˚
θ
θ
Average On-state Current IT(AV) (mA )
Ambient Temperature TA (°C)
30˚60˚90˚120˚DC
Single Half-wave
120
100
80
60
40
20
00 100 200 400300 500
= 180˚
θ
θ
Average On-state Current IT(AV) (mA )
Figure 11. PT(AV) vs. IT(AV) Characteristics Figure 12. TA vs. IT(AV) Characteristics
Average On-state P ower Diss i pation PT(AV) (W)
Single Full-wave
0.7
0.6
0.5
0.4
0.3
0.2
0.1
00 100 200 400300 500
= 180˚
θ
30˚
60˚90˚120˚
θ
Average On-state Current IT(AV) (mA )
Ambient Temperature TA (°C)
Single Full-wave
30˚60˚90˚120˚
120
100
80
60
40
20
00 100 200 400300 500
= 180˚
θ
θ
Average On-state Current IT(AV) (mA )
Figure 13. IH vs. TA Example of Characteristics
Holding Current I H (mA )
10
5
1
0.5
0.1 −40 −20 0 40 8020 60 100 140120
Ambient Temperature TA (°C)
Data Sheet D15290EJ4V0DS 5
03P4MG,03P6MG
Figure 14. Zth Characteristics
Transient Thermal Impedance Zth (°C/W)
1000
100
10
1
0.001 0.01 0.1 1 10 100 1000
Connection to
ambient
Time t (s)
03P4MG,03P6MG
The information in this document is current as of February, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
•
•
•
•
•
•
M8E 02. 11-1
