BAT42W / BAT43W Vishay Semiconductors Small Signal Schottky Diodes Features * These diodes feature very low turn-on voltage and fast switching. These devices are e3 protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges * These diodes are also available in the SOD-123 case with the type designations BAT42W to BAT43W and in designations LL42 to LL43. * For general purpose applications * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Plastic case Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part Ordering code Marking Remarks BAT42W BAT42W-GS18 or BAT42W-GS08 L2 Tape and Reel BAT43W BAT43W-GS18 or BAT43W-GS08 L3 Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Repetitive peak reverse voltage Symbol Value VRRM 30 Unit V IF 2001) mA Forward continuous current Tamb = 25 C Repetitive peak forward current tp < 1 s, < 0.5, Tamb = 25 C IFRM 5001) mA Surge forward current tp < 10 ms, Tamb = 25 C IFSM 41) A Tamb = 65 C Ptot 1) Power dissipation 1) 200 1) mW Valid provided that electrodes are kept at ambient temperature Document Number 85661 Rev. 1.2, 15-Jul-05 www.vishay.com 1 BAT42W / BAT43W Vishay Semiconductors Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 3001) C/W Thermal resistance junction to ambient air Tj 125 C Tamb - 55 to + 125 C TS - 55 to + 150 C Junction temperature Ambient operating temperature range Storage temperature range 1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Reverse breakdown voltage 1) Leakage current 1) Forward voltage Test condition Part Max Unit IR 0.5 A VR = 25 V, Tj = 100 C IR 100 A IF = 200 mA VF 1 V IR = 100 A (pulsed) VR = 25 V Symbol Min V(BR)R 30 IF = 10 mA BAT42W VF 0.4 V BAT42W VF 0.65 V IF = 2 mA BAT43W VF 0.33 V IF = 15 mA BAT43W VF VR = 1 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, Irr = 1 mA, RL = 100 trr Detection efficieny RL = 15 k, CL = 300 pF, f = 45 MHz, VRF = 2 V v 0.26 0.45 Ctot 7 5 80 V pF ns % Pulse test tp < 300 s < 2 % www.vishay.com 2 V IF = 50 mA Diode capacitance 1) Typ. Document Number 85661 Rev. 1.2, 15-Jul-05 BAT42W / BAT43W Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 18 C D - Diode Capacitance ( pF ) Ptot - Power Dissipation ( mW ) 250 200 150 100 50 16 14 12 10 8 6 4 2 0 0 0 50 100 150 200 18445 TA - Ambient Temperature ( C ) 18442 Figure 1. Admissible Power Dissipation vs. Ambient Temperature 0 10 20 30 40 50 60 VR - Reverse Voltage ( V ) Figure 4. Typical Capacitance vs. Reverse Applied Voltage I F - Forward Current ( mA ) 1000 100 - 40 C 125 C 10 25 C 1 0.1 0.01 0 18443 200 400 600 800 1000 1200 VF - Instantaneous Forward Voltage ( mV ) Figure 2. Typical Reverse Characteristics IR - Reverse Leakage Current ( A ) 1000 125 C 100 100 C 75 C 10 50 C 1 25 C 0.1 0.01 0 18444 10 20 30 40 VR - Reverse Voltage ( V ) 50 Figure 3. Typical Reverse Characteristics Document Number 85661 Rev. 1.2, 15-Jul-05 www.vishay.com 3 BAT42W / BAT43W Vishay Semiconductors Package Dimensions in mm (Inches) 1.35 (0.053) max. 0.25 (0.010) min. 0.1 (0.004) max. 0.55 (0.022) 0.15 (0.006) max. Mounting Pad Layout Cathode Band 2.40 (0.094) 2.55 (0.100) 2.85 (0.112) 3.55 (0.140) 3.85 (0.152) ISO Method E 1.40 (0.055) 1.70 (0.067) 0.72 (0.028) 17432 1.40 (0.055) www.vishay.com 4 Document Number 85661 Rev. 1.2, 15-Jul-05 BAT42W / BAT43W Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85661 Rev. 1.2, 15-Jul-05 www.vishay.com 5