BAT42W / BAT43W
Document Number 85661
Rev. 1.2, 15-Jul-05
Vishay Semiconductors
www.vishay.com
1
17431
Small Signal Schottky Diodes
Features
• These diodes feature very low turn-on volt-
age and fast switching. These devices are
protected by a PN junction guard ring
against excessive voltage, such as elec-
trostatic discharges
• These diodes are also available in the SOD-123
case with the type designations BAT42W to
BAT43W and in designations LL42 to LL43.
• For general purpose applications
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Part Ordering code Marking Remarks
BAT42W BAT42W-GS18 or BAT42W-GS08 L2 Tape and Reel
BAT43W BAT43W-GS18 or BAT43W-GS08 L3 Tape and Reel
Parameter Test condition Symbol Value Unit
Repetitive peak reverse voltage VRRM 30 V
Forward continuous current Tamb = 25 °C IF2001) mA
Repetitive peak forward current tp < 1 s, δ < 0.5, Tamb = 25 °C IFRM 5001) mA
Surge forward current tp < 10 ms, Tamb = 25 °C IFSM 41) A
Power dissipation1) Tamb = 65 °C Ptot 2001) mW
e3
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2
Document Number 85661
Rev. 1.2, 15-Jul-05
BAT42W / BAT43W
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
1) Pulse test tp < 300 µs θ < 2 %
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air
RthJA 3001) °C/W
Junction temperature Tj125 °C
Ambient operating temperature
range
Tamb - 55 to + 125 °C
Storage temperature range TS- 55 to + 150 °C
Parameter Test condition Part Symbol Min Typ. Max Unit
Reverse breakdown voltage IR = 100 µA (pulsed) V(BR)R 30 V
Leakage current1) VR = 25 V IR0.5 µA
VR = 25 V, Tj = 100 °C IR100 µA
Forward voltage1) IF = 200 mA VF1V
IF = 10 mA BAT42W VF0.4 V
IF = 50 mA BAT42W VF0.65 V
IF = 2 mA BAT43W VF0.26 0.33 V
IF = 15 mA BAT43W VF0.45 V
Diode capacitance VR = 1 V, f = 1 MHz Ctot 7pF
Reverse recovery time IF = 10 mA, IR = 10 mA,
Irr = 1 mA, RL = 100 Ω
trr 5ns
Detection efficieny RL = 15 kΩ, CL = 300 pF,
f = 45 MHz, VRF = 2 V
ηv80 %
BAT42W / BAT43W
Document Number 85661
Rev. 1.2, 15-Jul-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 2. Typical Reverse Characteristics
Figure 3. Typical Reverse Characteristics
200
18442
T
A
- Ambient Temperature ( °C)
250
200
150
100
50
50 100 1500
0
P - Power Dissipation ( mW )
tot
18443
120010008006004002000
I - Forward Current ( mA )
F
1000
100
10
1
0.1
0.01
V
F
- Instantaneous Forward Voltage ( mV )
°C25
°C125 °C-40
1000
100
10
1
0.1
0.01
18444
0 1020304050
V
R
- Reverse Voltage(V)
°C125
°C100
°C75
°C50
°C25
I - Reverse Leakage Current ( A )
R
µ
Figure 4. Typical Capacitance vs. Reverse Applied Voltage
18445
18
16
14
12
10
8
6
4
2
00102030405060
VR-Reverse Voltage ( V)
C - Diode Capacitance ( pF )
D
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4
Document Number 85661
Rev. 1.2, 15-Jul-05
BAT42W / BAT43W
Vishay Semiconductors
Package Dimensions in mm (Inches)
Cathode Band
17432
0.55 (0.022)
1.70 (0.067)
1.40 (0.055)
3.85 (0.152)
3.55 (0.140)
2.85 (0.112)
2.55 (0.100)
0.1 (0.004) max.
1.35 (0.053) max.
0.25 (0.010) min. 0.15 (0.006) max.
2.40 (0.094)
1.40 (0.055)
ISO Method E
Mounting Pad Layout
0.72 (0.028)
BAT42W / BAT43W
Document Number 85661
Rev. 1.2, 15-Jul-05
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
