IS733 A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS z UL recognised, File No. E91231 Package Code " GG " 7.0 6.0 'X' SPECIFICATIONAPPROVALS VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 DESCRIPTION The IS733 optically coupled isolator consists of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. z FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z AC or polarity insensitive input z All electrical parameters 100% tested z Custom electrical selections available z Dimensions in mm 2.54 1 2 6 5 3 4 1.2 7.62 6.62 7.62 4.0 3.0 13 Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTEMAXIMUMRATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -30C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUTDIODE Forward Current Power Dissipation 50mA 70mW OUTPUT TRANSISTOR APPLICATIONS Computer terminals z Industrial systems controllers z Telephone sets, Telephone exchangers z Signal transmission between systems of different potentials and impedances z 10.46 9.86 35V 35V 6V 6V 50mA 150mW OPTION G OPTION SM SURFACE MOUNT 0.6 0.1 Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Emitter-base Voltage BVEBO Collector Current Power Dissipation 7.62 POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.27mW/C above 25C) 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1UD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 17/7/08 DB91060 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER MIN TYP MAX UNITS Input Forward Voltage (VF) Output Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-base Breakdown (BVEBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (note 2 ) 15 Coupled 1.2 V IF = 20mA 35 V IC = 0.1mA 35 6 6 100 V V V nA IC = 10A IE = 100A IE = 100A VCE = 20V 300 % 1mAIF , 5V VCE 0.2 V 20mAIF , 1mAIC VRMS VPK See note 1 See note 1 VIO = 500V (note 1) s s VCE = 2V, IC= 2mA, RL = 100 Collector-emitter SaturationVoltageVCE(SAT) Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time Output Fall Time Note 1 Note 2 17/7/08 tr tf 4 3 1.4 TEST CONDITION 18 18 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB91060m-AAS/A3 150 100 50 0 -30 0 25 50 75 100 125 5 8mA 6 5mA =1mA 2mA 3mA Collector-emitter Saturation Voltage vs. Forward Current TA = 25C Ic Collector power dissipation PC (mW) 200 Collector-emitter saturation voltage VCE(SAT) (V) Collector Power Dissipation vs. Ambient Temperature 4 3 2 1 0 0 5 10 Forward current IF (mA) Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 60 TA = 25C 50 Collector current IC (mA) Forward current IF (mA) 50 40 30 20 10 0 50 30 40 20 30 15 20 10 10 IF = 5mA 0 -30 0 25 50 75 100 125 0 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature Current Transfer Ratio vs. Forward Current 320 0.14 0.12 Current transfer ratio CTR (%) Collector-emitter saturation voltage VCE(SAT) (V) Ambient temperature TA ( C ) IF = 20mA IC = 1mA 0.10 0.08 0.06 0.04 0.02 280 240 200 160 120 80 VCE = 5V TA = 25C 40 0 0 -30 0 25 50 75 Ambient temperature TA ( C ) 17/7/08 15 100 1 2 5 10 20 50 Forward current IF (mA) DB91060m-AAS/A3