17/7/08
A.C. INPUT PHOTOTRANSISTOR
OPTICALLY COUPLED
ISOLATORS
APPROVALS
zUL recognised, File No. E91231
Package Code " GG "
'X' SPECIFICATION APPROV ALS
zVDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The IS733 optically coupled isolator consists of
two infrared light emitting diodes connected in
inverse parallel and NPN silicon photo transistor
in a standard 6 pin dual in line plastic package.
FEATURES
zOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
T ape&reel - add SMT&R after part no.
zHigh Isolation V oltage (5.3kVRMS ,7.5kVPK )
zAC or polarity insensitive input
zAll electrical parameters 100% tested
zCustom electrical selections available
APPLICATIONS
zComputer terminals
zIndustrial systems controllers
zTelephone sets, Telephone exchangers
zSignal transmission between systems of
different potentials and impedances
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park V iew Road West,
Park V iew Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel: (01429)863609 Fax : (01429) 863581 e-mail
sales@isocom.co.uk http://www.isocom.com
IS733
0.26
0.5
1
34
6
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
25
0.5
Dimensions in mm
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
10.46
9.86
0.6
0.1 1.25
0.75
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage T emperature -55°C to + 125°C
Operating Temperature -30°C to + 100°C
Lead Soldering T emperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current ±50mA
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter V oltage BVCEO 35V
Collector-base V oltage BVCBO 35V
Emitter-collector V oltage BVECO 6V
Emitter-base V oltage BVEBO 6V
Collector Current 50mA
Power Dissipation 150mW
POWER DISSIPATION
T otal Power Dissipation 200mW
(derate linearly 2.27mW/°C above 25°C)
DB91060
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.4 V IF = ±20mA
Output Collector-emitter Breakdown (BVCEO)35 V I
C = 0.1mA
( note 2 )
Collector-base Breakdown (BVCBO)35 V I
C = 10μA
Emitter-base Breakdown (BVEBO)6 V I
E = 100μA
Emitter-collector Breakdown (BVECO)6 V I
E = 100μA
Collector-emitter Dark Current (ICEO) 100 nA VCE = 20V
Coupled Current Transfer Ratio (CTR) (note 2 ) 1 5 3 0 0 % ±1mAIF , 5V VCE
Collector-emitter Saturation VoltageVCE(SAT) 0.2 V ±20mAIF , 1mAIC
Input to Output Isolation Voltage V ISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Rise Time tr 4 1 8 μsV
CE = 2V ,
Output Fall Time tf 3 1 8 μsI
C= 2mA, RL = 100Ω
17/7/08
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB91060m-AAS/A3
17/7/08
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
TA = 25°C
0
1
2
3
4
5
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
IF = ±20mA
IC = 1mA
Forward current IF (±mA)
Collector-emitter Saturation
Voltage vs. Forward Current
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current IC (mA)
Current Transfer Ratio vs. Forward Current
Forward current IF (±mA)
Current transfer ratio CTR (%)
1 2 5 10 20 50
0
80
120
160
200
240
0 2 4 6 8 10
0
10
20
30
40
50
40
TA = 25°C
280
320
Forward current IF (±mA)
Collector-emitter saturation voltage VCE(SAT) (V)
0 5 10 15
6
VCE = 5V
TA = 25°C
IF = ±5mA
2mA
Ic =1mA
8mA
5mA
3mA
±10
±15
±20
±30
±50
DB91060m-AAS/A3