VCUT0714A-HD1-GS08 - VISHAY SEMICONDUCTOR

Document Number: 81801 For technical questions, contact: ESDprotection@vishay.com www.vishay.com

Rev. 1.6, 26-Oct-10 1

Bidirectional Asymmetrical (BiAs) Single Line ESD-Protection

Diode in LLP1006-2L

VCUT0714A-HD1

Vishay Semiconductors

MARKING (example only)

Bar = pin 1 marking

Y = type code (see table below)

X = date code

FEATURES

• Ultra compact LLP1006-2L

• Low package height < 0.4 mm

• 1-line ESD-protection

• Working range - 7 V up to + 14 V or - 14 V up to

+ 7 V

• Low leakage current < 0.1 µA

• Low load capacitance typical CD = 8 pF

• ESD-protection acc. IEC 61000-4-2

± 25 kV contact discharge

± 30 kV air discharge

• Soldering can be checked by standard vision inspection.

No X-ray necessary

• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

20855

20950

21121

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL

(8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY

VCUT0714A-HD1 VCUT0714A-HD1-GS08 8000 8000

PACKAGE DATA

DEVICE NAME PACKAGE

NAME

TYPE

CODE WEIGHT MOLDING COMPOUND

FLAMMABILITY RATING

MOISTURE

SENSITIVITY LEVEL

SOLDERING

CONDITIONS

VCUT0714A-HD1 LLP1006-2L B 0.72 mg UL 94 V-0 MSL level 1

(according J-STD-020) 260 °C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS VCUT0714A-02Z

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current

Pin 1 to pin 2

acc. IEC 61000-4-5, 8/20 µs/single shot IPPM

Pin 2 to pin 1

acc. IEC 61000-4-5, 8/20 µs/single shot 2A

Peak pulse power

Pin 1 to pin 2

acc. IEC 61000-4-5, 8/20 µs/single shot PPP

63 W

Pin 2 to pin 1

acc. IEC 61000-4-5, 8/20 µs/single shot 54 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD

± 25 kV

Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature TSTG - 55 to + 150 °C

** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902

www.vishay.com For technical questions, contact: ESDprotection@vishay.com Document Number: 81801

2Rev. 1.6, 26-Oct-10

VCUT0714A-HD1

Vishay Semiconductors Bidirectional Asymmetrical (BiAs) Single

Line ESD-Protection Diode in LLP1006-2L

CUT THE SPIKES WITH VCUT0714A-HD1

The VCUT0714A-HD1 is a bidirectional but asymmetrical (BiAs) ESD-protection device which clamps positive and negative

overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT0714A-HD1 offers a high

isolation (low leakage current, small capacitance) within the specified working range of - 7 V to + 14 V or - 14 V and + 7 V. Due

to the short leads and small package size of the tiny LLP1006-2L package the line inductance is very low, so that fast transients

like an ESD-strike can be clamped with minimal over- or undershoots.

Note

• Ratings at 25 °C, ambient temperature unless otherwise specified. Measured from pin 2 to pin 1.

Note

• Ratings at 25 °C, ambient temperature unless otherwise specified. Measured from pin 1 to pin 2.

ELECTRICAL CHARACTERISTICS VCUT0714A-HD1

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected Nchannel - - 1 lines

Reverse working voltage at I = 0.1 µA VRWM 14 - - V

Reverse current at V = 14 V IR--0.1µA

Reverse breakdown voltage at I = 1 mA VBR 14.5 - - V

Reverse clamping voltage at IPP = 1 A VC

--27V

at IPP = IPPM = 2 A - - 30 V

Capacitance at V = 0 V; f = 1 MHz CD

-88.5pF

at V = 7 V; f = 1 MHz - 4 - pF

ELECTRICAL CHARACTERISTICS VCUT0714A-HD1

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected Nchannel - - 1 lines

Reverse working voltage at I = 0.1 µA VRWM 7--V

Reverse current at V = 7 V IR--0.1µA

Reverse breakdown voltage at I = 1 mA VBR 7.3 - - V

Reverse clamping voltage at IP2 = 1 A VC

--13V

at IPP = IPPM = 5 A - - 17 V

Capacitance at V = 0 V; f = 1 MHz CD

-88.5pF

at V = 3.5 V; f = 1 MHz - 6.4 - pF

Ground

- 7 V ≤ VRW ≤ + 14 V - 14 V ≤ VRW ≤ + 7 V

22286

Document Number: 81801 For technical questions, contact: ESDprotection@vishay.com www.vishay.com

Rev. 1.6, 26-Oct-10 3

VCUT0714A-HD1

Bidirectional Asymmetrical (BiAs) Single

Line ESD-Protection Diode in LLP1006-2L Vishay Semiconductors

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330 Ω/150 pF)

Fig. 2 - 8/20 µs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR

Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR

Fig. 5 - Typical Peak Clamping Voltage VC vs.

Peak Pulse Current IPP

Fig. 6 - Typical Clamping Performance at + 8 kV

Contact Discharge (acc. IEC 61000-4-2)

0 %

20 %

40 %

60 %

80 %

100 %

120 %

- 10 0 10 20 30 40 50 60 70 80 90 100

Time (ns)

Discharge Current IESD

Rise time = 0.7 ns to 1 ns

53 %

27 %

20557

0 %

20 %

40 %

60 %

80 %

100 %

010203040

Time (µs)

IPPM

20 µs to 50 %

8 µs to 100 %

20548

0246810 12 14 16

VR (V)

CD (pF)

f = 1 MHz

Pin 1 to 2

Pin 2 to 1

20576

0.01 0.1 1 10 100 1000 10 000

IR (µA)

VR (V)

Pin 1 to 2

Pin 2 to 1

20577

01234567

IPP (A)

VC (V)

Measured acc. IEC 61000-4-5

(8/20 µs - wave form)

Pin 1 to 2

Pin 2 to 1

20578

- 10

- 10 0 10 20 30 40 50 60 70 8090

t (ns)

C-ESD

(V)

Acc. IEC 61000-4-2

+ 8 kV

contact discharge

Pin 1 to 2

20579

www.vishay.com For technical questions, contact: ESDprotection@vishay.com Document Number: 81801

4Rev. 1.6, 26-Oct-10

VCUT0714A-HD1

Vishay Semiconductors Bidirectional Asymmetrical (BiAs) Single

Line ESD-Protection Diode in LLP1006-2L

Fig. 7 - Typical Clamping Performance at - 8 kV

Contact Discharge (acc. IEC 61000-4-2)

Fig. 8 - Typical Peak Clamping Voltage at ESD

Contact Discharge (acc. IEC 61000-4-2)

PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2L

- 10 0 10 20 30 40 50 60 70 8090

t (ns)

VC-ESD (V)

Acc. IEC 61000-4-2

- 8 kV

contact discharge

Pin 1 to 2

20580

- 80

- 70

- 60

- 50

- 40

- 30

- 20

- 10

100

120

140

160

180

0 5 10 15 20 25 30

VESD (kV)

VC-ESD (V)

Acc. IEC 61000-4-2

contact discharge

VC-ESD

Pin 1 to 2

Pin 2 to 1

20575

20812

Document no.:S8-V-3906.04-005 (4)

0.55 (0.022)

0.45 (0.018)

0.25 (0.010)

0.15 (0.006)

0.45 (0.018)

0.35 (0.014)

0.3 (0.012)

0.2 (0.008)

0.4 (0.016)

0.33 (0.013)

1.05 (0.041)

0.95 (0.037)

0.05 (0.002)

0 (0.000)

0.125 (0.005) ref.

0.65 (0.026)

0.55 (0.022)

0.05 (0.002)

0.25 (0.010)

0.5 (0.020)

1 (0.039)

0.5 [0.020]

0.6 (0.024)

0.2 (0.008)

Rev. 4 - Date: 12. Sept. 2008

Created - Date: 13. July. 2007

Orientation identification

Foot print recommendation: Solder

resist mask

Solder pad

Soldermask opening ± 0.03

measured middle of the package

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www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

Disclaimer

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by

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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 02-Oct-12 1Document Number: 91000