DATA SH EET
Product data sheet
Supersedes data of 2004 Apr 06 2004 Aug 16
DISCRETE SEMICONDUCTORS
PDTC143Z series
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
2004 Aug 16 2
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩPDTC143Z series
FEATURES
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
APPLICATIONS
General purpose switc hing and amplification
Inverter and interface c ir cu i ts
Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped tran sistor (see “Simplified outline,
symbol and pinning” for pac kage details).
SYMBOL PARAMETER TYP. MAX. UNIT
VCEO collector-emitter
voltage 50 V
IOoutput curr en t (DC) 100 mA
R1 bias resistor 4.7 kΩ
R2 bias resistor 47 kΩ
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER PACKAGE MARKING CODE PNP COMPLEMENT
PHILIPS EIAJ
PDTC143ZE SOT416 SC-75 38 PDTA143ZE
PDTC143ZEF SOT490 SC-89 53 PDTA143ZEF
PDTC143ZK SOT346 SC-59 18 PDTA143ZK
PDTC143ZM SOT883 SC-101 E3 PDTA143ZM
PDTC143ZS SOT54 (TO-92) SC-43 TC143Z PDTA143ZS
PDTC143ZT SOT23 *18(1) PDTA143ZT
PDTC143ZU SOT323 SC-70 *54(1) PDTA143ZU
2004 Aug 16 3
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩPDTC143Z series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING
PIN DESCRIPTION
PDTC143ZS 1base
2collector
3emitter
PDTC143ZE 1base
PDTC143ZEF 2emitter
PDTC143ZK 3collector
PDTC143ZT
PDTC143ZU
PDTC143ZM 1base
2emitter
3collector
handbook, halfpage
MAM364
1
2
3
R1
R2
2
3
1
handbook, halfpage
MDB269
1
2
3
Top view
R1
R2
12
3
handbook, halfpage
MHC506
1
2
3
R1
R2
2
1
3
bottom view
2004 Aug 16 4
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩPDTC143Z series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating Sys tem (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PDTC143ZE plastic surface mounted package; 3 leads SOT416
PDTC143ZEF plastic surface mounted package; 3 leads SOT490
PDTC143ZK plastic surface mounted package; 3 leads SOT346
PDTC143ZM leadless ultr a small plastic package; 3 solder lands; b ody
1.0 × 0.6 × 0.5 mm SOT883
PDTC143ZS plastic single-e nded leaded (through hole) package; 3 leads SOT54
PDTC143ZT plastic surface mounted package; 3 leads SOT23
PDTC143ZU plastic surface mounted package; 3 leads SOT323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 50 V
VCEO collector-emitter voltage open base 50 V
VEBO emitter-base voltage open collector 10 V
VIinput voltage
positive +30 V
negative 5 V
IOoutput current (DC) 100 mA
ICM peak collector current 100 mA
Ptot total power dissipation Tamb 25 °C
SOT54 note 1 500 mW
SOT23 note 1 250 mW
SOT346 note 1 250 mW
SOT323 note 1 200 mW
SOT883 notes 2 and 3 250 mW
SOT416 note 1 150 mW
SOT490 notes 1 and 2 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient
temperature 65 +150 °C
2004 Aug 16 5
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩPDTC143Z series
THERMAL CHARACTE RISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient in free air
SOT54 note 1 250 K/W
SOT23 note 1 500 K/W
SOT346 note 1 500 K/W
SOT323 note 1 625 K/W
SOT883 notes 2 and 3 500 K/W
SOT416 note 1 833 K/W
SOT490 notes 1 and 2 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = 50 V; IE = 0 A −−100 nA
ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A −−1μA
VCE = 30 V; IB = 0 A; Tj = 150 °C−−50 μA
IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 A −−170 μA
hFE DC current gain VCE = 5 V; IC = 10 mA 100
VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA −−100 mV
Vi(off) input-off voltage IC = 100 μA; VCE = 5 V 0.6 0.5 V
Vi(on) input-on voltage IC = 5 mA; VCE = 0.3 V 1.3 0.9 V
R1 input resistor 3.3 4.7 6.1 kΩ
resistor ratio 810 12
Cccollector capacitance IE = ie = 0 A; VCB = 10 V;
f = 1 MHz −−2.5 pF
R2
R1
--------
2004 Aug 16 6
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩPDTC143Z series
PACKAGE OUTLINES
UNIT A
1
b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.35 0.26
0.10 3.1
2.7 1.7
1.3 0.95
e
1.9 3.0
2.5 0.33
0.23 0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
SOT346 TO-236 SC-59A
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0 1 2 mm
scale
A
1.3
1.0 0.1
0.013
c
X
12
3
Plastic surface-mounted package; 3 leads SOT34
6
04-11-11
06-03-16
2004 Aug 16 7
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩPDTC143Z series
UNIT A1
max.
A(1) bb
1e1
eLL
1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.46 0.20
0.12 0.55
0.47
0.03 0.62
0.55 0.35 0.65
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
0.30
0.22
0.30
0.22
SOT883 SC-101 03-02-05
03-04-03
DE
1.02
0.95
L
E
2
3
1
b
b1
A1
A
D
L1
0 0.5 1 mm
scale
L
eadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT88
3
e
e1
2004 Aug 16 8
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩPDTC143Z series
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 04-06-28
04-11-16
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT5
4
e1e
1
2
3
2004 Aug 16 9
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩPDTC143Z series
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Aug 16 10
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩPDTC143Z series
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads SOT32
3
04-11-04
06-03-16
2004 Aug 16 11
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩPDTC143Z series
UNIT A1
max bpcDEe1HELpQw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1 0.30
0.15 0.25
0.10 1.8
1.4 0.9
0.7 0.5
e
11.75
1.45 0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
SOT416 SC-75
wM
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
EAB
B
vMA
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface-mounted package; 3 leads SOT41
6
04-11-04
06-03-16
2004 Aug 16 12
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩPDTC143Z series
UNIT bpcDE e1HELpwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
05-07-28
06-03-16
IEC JEDEC JEITA
mm 0.33
0.23 0.2
0.1 1.7
1.5 0.95
0.75 0.5
e
1.0 1.7
1.5 0.1
0.1
DIMENSIONS (mm are the original dimensions)
0.5
0.3
SOT490 SC-89
bp
D
e1
e
A
Lp
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
0.8
0.6
c
X
12
3
Plastic surface-mounted package; 3 leads SOT49
0
2004 Aug 16 13
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩPDTC143Z series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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reserves the right to make changes to informa tion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificati on .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the la test version.
Printed in The Netherlands R75/07/pp14 Date of release: 2004 Aug 16 Document orde r number: 9397 750 13677