Si4804DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4804DY Si4804DY-T1 (with Tape and Reel) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V 7.5 5.7 6.0 4.6 A 1.7 0.9 A 2.0 1.1 1.3 0.7 IDM Continuous Source Current (Diode Conduction)a Unit 20 TJ, Tstg -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 52 62.5 93 110 35 40 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71088 S-31989--Rev. D, 13-Oct-03 www.vishay.com 1 Si4804DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea nA mA 20 VDS w 5 V, VGS = 10 V rDS(on) V A VGS = 10 V, ID = 7.5 A 0.018 0.022 VGS = 4.5 V, ID = 6.5 A 0.024 0.030 gfs VDS = 15 V, ID = 7.5 A 22 VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 13 20 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance RG Turn-On Delay Time 2 nC 2.7 1.9 4 td(on) 8 16 tr 10 20 21 40 10 20 40 80 Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 10 V, ID = 7.5 A 0.5 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 3V VGS = 10 thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 4 2V 12 8 TC = 125_C 4 25_C -55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Document Number: 71088 S-31989--Rev. D, 13-Oct-03 Si4804DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 1000 0.032 800 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.040 VGS = 4.5 V 0.024 VGS = 10 V 0.016 0.008 Ciss 600 400 Coss Crss 200 0.000 0 0 4 8 12 16 20 0 6 ID - Drain Current (A) Gate Charge 24 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 7.5 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 7.5 A 1.4 1.2 1.0 0.8 0 0 3 6 9 12 0.6 -50 15 -25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.04 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ - Junction Temperature (_C) 20 I S - Source Current (A) 12 ID = 7.5 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71088 S-31989--Rev. D, 13-Oct-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4804DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA -0.0 Power (W) V GS(th) Variance (V) 0.2 -0.2 30 20 -0.4 10 -0.6 -0.8 -50 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 93_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 www.vishay.com 4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71088 S-31989--Rev. D, 13-Oct-03