Si4804DY
Vishay Siliconix
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
30
0.022 @ VGS = 10 V 7.5
30
0.030 @ VGS = 4.5 V 6.5
S1D1
G1D1
S2D2
G2D2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D1D1
G1
S1
N-Channel MOSFET
D2D2
G2
S2
Ordering Information: Si4804DY
Si4804DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20 V
Continuous Drain Current (TJ = 150
_
C)a
TA = 25_C
ID
7.5 5.7
Continuous Drain Current (TJ = 150_C)a
TA = 70_CID6.0 4.6 A
Pulsed Drain Current IDM 20
Continuous Source Current (Diode Conduction)aIS1.7 0.9 A
Maximum Power Dissipationa
TA = 25_C
PD
2.0 1.1
W
Maximum Power Dissipationa
TA = 70_CPD1.3 0.7 W
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Mi J ti tAbit
a
t v 10 sec
R
52 62.5
Maximum Junction-to-Ambienta
Steady State RthJA 93 110 _C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 35 40
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Si4804DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V 1
mA
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55_C 5 mA
On-State Drain CurrentaID(on) VDS w 5 V, VGS = 10 V20 A
Drain
-
Source On
-
State Resistance
a
rDS(on)
VGS = 10 V, I D = 7.5 A 0.018 0.022
W
D
ra
i
n-
S
ource
O
n-
St
a
t
e
R
es
i
s
t
ance
a
rDS(on) VGS = 4.5 V, ID = 6.5 A 0.024 0.030
W
Forward Transconductanceagfs VDS = 15 V, ID = 7.5 A 22 S
Diode Forward VoltageaVSD IS = 1.7 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Qg13 20
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 7.5 A 2 nC
Gate-Drain Charge Qgd 2.7
Gate Resistance RG0.5 1.9 4 W
Turn-On Delay Time td(on) 8 16
Rise Time trVDD = 15 V, RL = 15 W10 20
Turn-Off Delay Time td(off)
VDD = 15 V
,
RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W21 40 ns
Fall Time tf10 20
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/ms 40 80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS = 10 thru 4 V
TC = 125_C
−55_C
2 V 25_C
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS − Gate-to-Source Voltage (V)
− Drain Current (A)ID
3 V
Si4804DY
Vishay Siliconix
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
− On-Resistance (rDS(on) W)
0
200
400
600
800
1000
0 6 12 18 24 30
0.6
0.8
1.0
1.2
1.4
1.6
−50 −25 0 25 50 75 100 125 150
0
2
4
6
8
10
0 3 6 9 12 15
0.000
0.008
0.016
0.024
0.032
0.040
048121620
VDS − Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 15 V
ID = 7.5 A
ID − Drain Current (A)
VGS = 10 V
ID = 7.5 A
VGS = 10 V
VGS = 4.5 V
Gate Charge
On-Resistance vs. Drain Current
− Gate-to-Source Voltage (V)
Qg − Total Gate Charge (nC)
C − Capacitance (pF)
VGS
Capacitance
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
(Normalized)
− On-Resistance (rDS(on) W)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.00
0.01
0.02
0.03
0.04
0246810
TJ = 150_C
TJ = 25_C
ID = 7.5 A
20
10
1
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
− On-Resistance (rDS(on) W)
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
− Source Current (A)IS
Si4804DY
Vishay Siliconix
www.vishay.com
4
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
30
50
10
20
Power (W)
Single Pulse Power
Time (sec)
40
10−310−21 10 60010−1
10−4100
−0.8
−0.6
−0.4
−0.2
−0.0
0.2
0.4
−50 −25 0 25 50 75 100 125 150
ID = 250 mA
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
Variance (V)VGS(th)
TJ − Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 93_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
10−310−211010−1
10−4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1 100 6001010−1
10−2
10−3
