TOSHIBA July 1997 TIM1414-7-253 1. RF PERFORMANCE SPECIFICATIONS _(Ta= 25C ) CHARACTERISTICS |SYMBOL; CONDITION |MIN.| TYP. |MAX.|/UNIT Output Power at 1dB P1dBq) |VDS= 9V 37.0 | 38.0} | dBm Compression Point f=13.75GHz Output Power at 1dB P1dB(2) |VDS= 9V 37.5 | 38.5 | Compression Point f=14.0-14.5GHz Power Gain at 1dB GidB 5.0 | 6.0 | | dB Compression Point VDS= 9V Drain Current IDS __|f=13.75-14.5GHz| | 2.2512.75) A Power Added Efficiency Tadd - 23 | % 2. ELECTRICAL CHARACTERISTICS (Ta= 25C ) CHARACTERISTICS {SYMBOL} CONDITION {|MIN.| TYP. |MAX.! UNIT Transconductance gm _ /|VDS= 3V {1500}; | mS IDS= 2.4A Pinch-off Voltage VGSoff |VDS= 3V -1.5 | -3.0] -45] V Ips= 72mA Saturated Drain Current Ipss___|VDS= 3V | 5.0 | 5.7 A Vas=0V Gate-Source Breakdown Vaso |IGS= -72nA 5 | | V Voltage Thermal Resistance Rth(c-c) |Channel to Case | 3.0 | 3.7 | C/W Applications Engineering Solid-State Engineering Department TOSHIBA corporation, Komukai Works