MIMMG400D060B6EN
600V 400A IGBT Module
RoHS Compliant
FEATURES
□ High short circuit capability,self limiting short circuit current
□ VCE(sat) with positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
□ Low switching losses
APPLICATIONS
□ High frequency switching application
□ Medical applications
□ Motion/servo control
□ UPS systems
ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified
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IGBT
VCES Collector - Emitter Voltage TVj V 006 C°52=
VGES Gate - Emitter Voltage ±20 V
TC=25°C 500 A
IC DC Collector Current
TC A 004 C°07=
ICM Repetitive Peak Collector Current tp A 008 sm1=
Ptot W 0521 TBGI reP noitapissiD rewoP
Diode
VRRM Repetitive Reverse Voltage TVj V 006 C°52=
TC A 005 C°52=
IF(AV) Average Forward Current
TC A 004 C°07=
IFRM Repetitive Peak Forward Current tp A 008 sm1=
I2T t Vj =125°C, t=10ms, VR=0V 10000 A2s
GD Series Module
MIMMG400D060B6EN
ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C unless otherwise specified
Symbol Parameter Test Conditions Min. Typ. Max. Unit
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=6.4mA 4.9 5.8 6.5 V
IC=400A, VGE=15V, TVj=25°C 1.45 V
VCE(sat)
Collector - Emitter
Saturation Voltage IC=400A, VGE=15V, TVj=125°C 1.6 V
VCE=600V, VGE=0V, TVj=25°C 1 mA
ICES Collector Leakage Current
VCE=600V, VGE=0V, TVj=125°C 5 mA
IGESGate Leakage Current VCE=0V,VGE±15V, TVj=125°C -400 400 nA
RGint 1 rotsiseR etaG detargetnI Ω
Qge Gate Charge VCE=300V, IC=400A , VGE=±15V 4.3 µC
Cies Fn 62 ecnaticapaC tupnI
Cres Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
0.76 nF
TVj =25°C 110 ns
td(on)Turn - on Delay Time
TVj =125°C 120 ns
TVj =25°C 50 ns
trRise Time
VCC=300V,IC=400A,
RG =1.5Ω,
VGE=±15V,
Inductive Load TVj =125°C 60 ns
TVj =25°C 490 ns
td(off) Turn - off Delay Time
TVj =125°C 520 ns
TVj =25°C 60 ns
tf Fall Time
VCC=300V,IC=400A,
RG =1.5Ω,
VGE=±15V,
Inductive Load TVj =125°C 70 ns
TVj =25°C 2.1 mJ
Eon Turn - on Energy
TVj =125°C 3.2 mJ
TVj =25°C 12 mJ
Eoff Turn - off Energy
VCC=300V,IC=400A,
RG =1.5Ω,
VGE=±15V,
Inductive Load TVj =125°C 15 mJ
ISC Short Circuit Current
tpsc≤6µS , VGE=15V
TVj=125°C,VCC=360V
2000
A
RthJC Junction-to-Case Thermal Resistance （ Per IGBT） 0.12 K /W
Diode
IF=400A , VGE=0V, TVj =25°C 1.55 V
VF Forward Voltage
IF=400A , VGE=0V, TVj =125°C 1.50 V
IRRM A 033 tnerruC yrevoceR esreveR .xaM
Qrr Cµ 0.92 egrahC yrevoceR esreveR
Erec Reverse Recovery Energy
IF=400A , VR=300V
diF/dt=-7000A/μs
TVj=125°C 7.4 mJ
RthJCD Junction-to-Case Thermal Resistance （ Per Diode） 0.22 K /W
MIMMG400D060B6EN
MODULE CHARACTERISTICS TC=25°C unless otherwise specified
Symbol Parameter Test Conditions Min. Typ. Max. Unit
TVj max C° 571 erutarepmeT noitcnuJ .xaM
TVj op C° 051 04- erutarepmeT gnitarepO
Tstg C° 521 04- erutarepmeT egarotS
Visol V 0003 nim1=t ,CA egatloV tseT noitalusnI
053 xednI gnikcarT evitarapmoC ITC
Torque Module-to-Sink Recommended（M6） 3 5 N·m
Torque Module Electrodes Recommended（M6） 2.5 5 N·m
g 023 thgieW
IC (A)
VCE（V）
Figure1. Typical Output characteristics
TVj=125°C
TVj=25°C
800
640
480
320
160
0
0 0.4 0.8 1.2 1.6 2.0 2.4
40
60
VCE（V）
Figure2. Typical Output characteristics
4.0 3.5 3.0 2.5 1.51.00.50
IC (A)
VGE（V）
Figure3. Typical Transfer characteristics
0
20
30
10
00 2 610 14 18
Eon Eoff
(
mJ
)
Eon
Eof
f
RG（Ω）
Figure4. Switching Energy vs. Gate Resistor
VCC=300V
IC=400A
VGE=±15V
TVj =125°C
TVj =125°C
2.0 4.5 5.0
VGE =15V
160
IC (A)
320
480
640
800
TVj =125°C
TVj =25°C
VCE =20V
1110 9 7 6 5 8
800
640
480
320
160
0
50
MIMMG400D060B6EN
0
200
400
600
800
1000
0 200
IC（A）
Figure5. Switching Energy vs. Collector Current
VCC=300V
RG=1.5Ω
VGE=±15V
T
Vj
=125°C
800600
400 0100200300400 500 600
VCE（V）
Figure6. Reverse Biased Safe Operating Area
700
Eof
f
Eon
0
8
16
40
Eon Eoff
(
mJ
)
RG=1.5Ω
VGE=±15V
T
Vj
=125°C
IC (A)
32
E
rec
(
mJ
)
E
rec
(
mJ
)
RG（Ω）
Figure8. Switching Energy vs. Gate Resistor
VF（V）
Figure7. Diode Forward Characteristics
0.4
0 0.8 1.2 1.6 2.0 02 4 6 8
6
4
2
0
IF (A)
Figure9. Switching Energy vs. Forward Current
800
600 200
0
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance
ZthJC
(
K/W
)
0
160
480
640
800
320
IF
(
A
)
TVj =25°C
TVj =125°C
12
6
4
2
0
8
10
0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
12
400
10
8
10
12
Diode
IGBT
24
RG=1.5Ω
VCE=300V
T
Vj
=125°C
IF=400A
VCE=300V
T
Vj
=125°C
MIMMG400D060B6EN
Fi
gure
11
.
Ci
rcu
i
t
Di
agram
93.0
28.0 28.0
16.0
20.0
108.0
M6
30.0
30.5
8.5
62.0
48.0
6.0
6.0
2.8x0.5
1 2 3
4 5 6 7
15.0
22.0 6.0
18
Φ6.5
Dimensions (mm)
Figure12. Package Outline
