T4-LDS-0307, Rev. 1 (8/5/13) ©2013 Microsemi Corporation Page 1 of 8
2N6058 and 2N6059
Available on
commercial
versions
NPN Darlington Power Silicon Transistor
Qualified per MIL-PRF-19500/502
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This high speed NPN transistor is rated at 12 amps and is military qualified up to a JANTXV
level. This TO-204AA isolated package features a 180 degree lead orientation.
TO-204AA (TO-3)
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N6058 and 2N6059
• JAN, JANTX, and J A NTXV qualifications are available per MIL-PRF-19500/502
• RoHS compliant versions available (commercial grade only)
APPLICATIONS / BENEFITS
• Military, space and other high reliability applications
• High frequency response
• TO-204AA case with isolated terminals
MAXIMUM RATINGS @ TC = +25 oC unless otherwise noted
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-55 to +175
oC
Thermal Resistance Juncti on-to-Case
RӨJC
1.0
oC/W
Collector Current
IC
12
A
Collector-Emitter Voltage 2N6058
2N6059
VCEO 80
100
V
Collector-Base Voltage 2N6058
2N6059
VCBO 80
100
V
Emitter-Base Voltage
VEBO
5
V
Total Power Dissipation @ TC = +25
o
C
(1)
@ TC = +100
o
C
PT 150
75
W
Notes: 1. Derate linearl y 1.0 W/oC above TC > +25 oC.
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2N6058 and 2N6059
MECHANICAL and PACKAGING
• CASE: Industry standard TO-204AD (TO-3), hermetically sealed, 0.040 inch diameter pins.
• FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating. Solderable per MIL-STD-750
method 2026.
• POLARITY: NPN (see schematic)
• MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screws
• WEIGHT: Approximately 15 grams
• See package dimensions on last page.
PART NOMENCLATURE
JAN 2N6058 (e3)
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
RoHS Compli ance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
IB
Base current: The value of the dc current into the base terminal.
IC
Collector current: The value of the dc current into the collector terminal.
IE
Emitter current: The value of the dc current into the emitter terminal.
TC
Case temperature: The temperature measured at a specified location on the case of a device.
VCB
Collector-bas e vo lt age: The dc voltage between the collector and the base.
VCBO
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter
terminal is open-circuited.
VCC
Collector-supp l y voltage : The supply voltage applied to a circuit connected to the collector.
VCE
Collector-emitter voltage: The dc voltage between the collector and the emitter.
VCEO
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the
base terminal is open-circuited.
VEB
Emitter-base voltage: The dc voltage between the emitter and the base.
VEBO
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the
collector terminal open-circuited.
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2N6058 and 2N6059
ELECTRICA L CHARACTERISTICS @ TA = +25 oC unless otherwise noted
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mA
2N6058
2N6059
V(BR)CEO 80
100
V
Collector-Emitter Cutoff Current
VCE = 40 V
VCE = 50 V
2N6058
2N6059
I
CEO
1.0
1.0
mA
Collector-Emitter Cutoff Current
VCE = 80 V, VEB = 1.5 V
V
CE
= 150 V, V
EB
= 1.5 V
2N6058
2N6059
I
CEX
10
10
µA
Emitter-Base Cutoff Current
V
EB
= 5.0 V
I
EBO
2.0 mA
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 1.0 A, VCE = 3.0 V
IC = 6.0 A, VCE = 3.0 V
IC = 12 A, VCE = 3.0 V
h
FE
1,000
1,000
150
18,000
Collector-Emitter Saturation Voltage
IC = 12 A, IB = 120 mA
IC = 6.0 A, IB = 24 mA
VCE(sat)
3.0
2.0
V
Base-Emitter Saturation Voltage
I
C
= 12 A, I
B
= 120 mA
VBE(sat) 4.0 V
Base-Emitter Voltage Non-saturated
V
CE
= 3.0 V, I
C
= 6 A
VBE 2.8 V
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 5 A, VCE = 3.0 V, f = 1 kHz
h
fe
1,000
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 5 A, VCE = 3.0 V, f = 1 MHz
|h
fe
|
10
250
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 100 kHz ≤ f ≤ 1 MHz
C
obo
300
pF
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2N6058 and 2N6059
ELECTRICA L CHARACTERISTICS @ TC = 25 oC unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 V, I
C
= 5 A; I
B1
= 20 mA
ton
2.0
µs
Turn-Off Time
V
CC
= 30 V, I
C
= 5 A; I
B1
= 20 mA
toff
10
µs
SAFE OPERATING AREA (See figures 1 and 2 and MIL-STD-750,Test Method 3053)
DC Tests
TC = +25 °C, +10 ºC, -0 ºC , t ≥ 1 second, 1 Cycle
Test 1
VCE = 12.5 V, IC = 12 A
Test 2
VCE = 30 V, IC = 5 A
Test 3
VCE = 70 V, IC = 200 mA (2N6058)
V
CE
= 90 V, I
C
= 155 mA (2N6059)
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2N6058 and 2N6059
SAFE OPERATING AREA
VCE – Collector to Emitter Volatge (Volts)
FIG URE 1
Maximum Safe Operating Area
(continuous dc)
IC = Collector Current (Amperes)
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2N6058 and 2N6059
SAFE OPERATING AREA (continued)
L – Inductance (Millihenries)
FIG URE 2
Safe Operating Area For Switching Between Saturation And Cutoff
(unclamped inductive load)
IC – Collector Current (Amperes)
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2N6058 and 2N6059
PACKAGE DIMENSIONS
NOTES: 1. Dimensions are in inches. Millimeters are given for information only.
2. Body contour is optional within zone defined by dimension CD.
3. At both ends
4. Both terminals
5. Dimension LD applies between dimension L1 and LL. Lead diameter sha ll not ex ceed twice dimension LD within
dimension L1. Diameter is uncontrolled in dimension L1.
6. Two holes
7. These dimen si ons shall be me asure d at poi nts 0.050 inch (1.27 mm) to 0.055 inch (1.40 mm) below the seating plane.
When gauge is not used, measurement shall be made at seating plane.
8. The seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch (0.10 mm) convex inside
a 0.930 inch (23.62 mm) diameter circle on the center of the header and flat within 0.001 inch (0.03 mm) concave to
0.006 inch (0.15 mm) conv ex overall.
9. The collector shall be electrically connected to the case.
10. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
See schematic on next page
Dimensions
Ltr
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
-
0.875
-
22.23
CH
0.250
0.328
6.35
8.33
HR
0.495
0.525
12.57
13.34
HR1
0.131
0.188
3.33
4.78
3
HT
0.060
0.135
1.52
3.43
LD
0.038
0.043
0.97
1.09
4, 5
LL
0.312
0.500
7.92
12.70
4
LL1
-
0.050
-
1.27
4, 5
MHD
0.151
0.161
3.84
4.09
6
MHS
1.177
1.197
29.90
30.40
PS
0.420
0.440
10.67
11.18
7, 8
PS1
0.205
0.225
5.21
5.72
7, 4, 8
S1
0.655
0.675
16.64
17.15
7
T1
Emitter
T2
Base
Case
Collector
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2N6058 and 2N6059
SCHEMATIC