MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150C INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING BCR3PM Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME 3.20.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 IT (RMS) ........................................................................ 3A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # .......................... 20mA (10mA) 5 Viso ........................................................................ 2000V UL Recognized: Yellow Card No.E80276(N) File No. E80271 123 0.5 2.6 Measurement point of case temperature 4.5 * * * * * 2.54 2 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Contactless AC switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage 1 600 V VDSM Non-repetitive peak off-state voltage 1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360 conduction, Tc=107C 3.0 A ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 30 A I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 3.7 A2s PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM for fusing 3 W 0.3 W Peak gate voltage 6 V IGM Peak gate current 0.5 Tj Junction temperature Tstg Storage temperature -- Viso Weight Typical value Isolation voltage Ta=25C, AC 1 minute, T1 * T2 * G terminal to case A -40 ~ +125 C -40 ~ +125 C 2.0 g 2000 V 1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150C INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125C, VDRM applied -- -- 2.0 mA VTM On-state voltage Tc=25C, ITM=4.5A, Instantaneous measurement -- -- 1.5 V -- -- 1.5 V -- -- 1.5 V ! VFGT ! VRGT ! Gate trigger voltage 2 @ Tj=25C, VD=6V, RL=6, RG=330 VRGT # # -- -- 1.5 IFGT ! ! -- -- 20 5 mA -- -- 20 5 mA -- -- 20 5 mA IRGT ! Gate trigger current 2 @ Tj=25C, VD=6V, RL=6, RG=330 # IRGT # V VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM 0.2 -- -- V Rth (j-c) Thermal resistance Junction to case 3 -- -- 4.5 C/ W (dv/dt)c Critical-rate of rise of off-state commutating voltage Tj=125C 5 -- -- V/s 4 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT10mA) is also available. (IGT item1) Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=-1.5A/ms MAIN CURRENT 3. Peak off-state voltage VD=400V MAIN VOLTAGE TIME (di/dt)c TIME TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 7 5 3 2 40 Tj = 25C 101 7 5 3 2 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150C INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 PGM = 3W PG(AV) = 0.3W 101 7 5 3 2 IGM = 0.5A VGT 100 7 5 3 2 IRGT I IFGT I, IRGT III VGD = 0.2V 10-1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) GATE VOLTAGE (V) GATE CHARACTERISTICS (, AND ) 103 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 101 -60 -40 -20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (C/W) 102 7 5 4 3 2 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 5.0 160 4.5 CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE 4.0 360 3.5 CONDUCTION 3.0 RESISTIVE, INDUCTIVE 2.5 LOADS 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) CASE TEMPERATURE (C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE IRGT III 102 IFGT I, IRGT I 7 5 4 3 2 GATE CURRENT (mA) 103 7 5 4 3 2 TYPICAL EXAMPLE 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE 120 120 t2.3 120 60 40 20 100 (%) 0 1 2 NATURAL CONVECTION CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 8 3 4 5 6 7 40 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 103 7 5 3 2 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE DISTRIBUTION T2+, G- TYPICAL EXAMPLE 102 7 5 3 2 100 60 RMS ON-STATE CURRENT (A) 104 7 5 3 2 101 7 5 3 2 80 RMS ON-STATE CURRENT (A) 105 7 TYPICAL EXAMPLE 5 3 2 103 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 0 T2+, G+ TYPICAL T2- , G- EXAMPLE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) 60 60 t2.3 80 0 LACHING CURRENT (mA) 100 100 t2.3 100 AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED 140 ALUMINUM AND GREASED INSULATED TYPE, PLANAR PASSIVATION TYPE BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) AMBIENT TEMPERATURE (C) Refer to the page 6 as to the product guaranteed maximum junction temperature 150C 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 -60 -40 -20 0 20 40 60 80 100 120 140 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) JUNCTION TEMPERATURE (C) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125C BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 140 120 100 80 60 III QUADRANT 40 20 I QUADRANT 0 1 2 10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104 INSULATED TYPE, PLANAR PASSIVATION TYPE CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) 100 (%) Refer to the page 6 as to the product guaranteed maximum junction temperature 150C COMMUTATION CHARACTERISTICS 7 5 3 2 100 (%) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 103 7 5 4 3 2 TYPICAL EXAMPLE TIME MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME VD 101 7 5 TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz III QUADRANT MINIMUM 3 CHARACTERISTICS 2 VALUE 100 I QUADRANT 7 0 2 3 5 7 101 10 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH SUPPLY VOLTAGE 5 7 102 2 3 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 IRGT III IRGT I A 6V IFGT I V 102 7 5 4 3 2 A 6V RG TEST PROCEDURE 1 V RG TEST PROCEDURE 2 6 101 0 10 A 6V 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (s) V RG TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM The product guaranteed maximum junction temperature 150C (See warning.) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING BCR3PM Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME 3.20.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 IT (RMS) ........................................................................ 3A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # .......................... 20mA (10mA) 5 Viso ........................................................................ 2000V UL Recognized: Yellow Card No.E80276(N) File No. E80271 123 0.5 2.6 Measurement point of case temperature 4.5 * * * * * 2.54 2 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Contactless AC switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage 1 600 V VDSM Non-repetitive peak off-state voltage 1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360 conduction, Tc=132C 3.0 A ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 30 A I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 3.7 A2s PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM for fusing 3 W 0.3 W Peak gate voltage 6 V IGM Peak gate current 0.5 Tj Junction temperature Tstg Storage temperature -- Viso Weight Typical value Isolation voltage Ta=25C, AC 1 minute, T1 * T2 * G terminal to case A -40 ~ +150 C -40 ~ +150 C 2.0 g 2000 V 1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE The product guaranteed maximum junction temperature 150C (See warning.) INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=150C, VDRM applied -- -- 2.0 mA VTM On-state voltage Tc=25C, ITM=4.5A, Instantaneous measurement -- -- 1.5 V -- -- 1.5 V -- -- 1.5 V ! VFGT ! VRGT ! Gate trigger voltage 2 @ Tj=25C, VD=6V, RL=6, RG=330 VRGT # # -- -- 1.5 IFGT ! ! -- -- 20 5 mA -- -- 20 5 mA -- -- 20 5 mA 0.2/0.1 -- -- V IRGT ! Gate trigger current 2 @ Tj=25C, VD=6V, RL=6, RG=330 # IRGT # V VGD Gate non-trigger voltage Tj=125C/150C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case 3 -- -- 4.5 C/ W (dv/dt)c Critical-rate of rise of off-state commutating voltage Tj=125C/150C 5/1 -- -- V/s 4 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT10mA) is also available. (IGT item1) Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125C/150C 2. Rate of decay of on-state commutating current (di/dt)c=-1.5A/ms MAIN CURRENT 3. Peak off-state voltage VD=400V MAIN VOLTAGE TIME (di/dt)c TIME TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 102 40 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 7 5 3 2 101 Tj = 150C 7 5 3 2 100 7 5 3 2 10-1 0.5 Tj = 25C 1.0 1.5 2.0 2.5 3.0 3.5 ON-STATE VOLTAGE (V) 4.0 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE The product guaranteed maximum junction temperature 150C (See warning.) INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE PGM = 3W PG(AV) = 0.3W 101 7 5 3 2 IGM = 0.5A VGT 100 7 5 3 2 IRGT I VGD = 0.1V 10-1 7 IFGT I, IRGT III 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) GATE VOLTAGE (V) 5 3 2 100 (%) GATE CHARACTERISTICS (, AND ) 103 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 TRANSIENT THERMAL IMPEDANCE (C/W) 102 7 5 4 3 2 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 5.0 160 4.5 140 4.0 360 3.5 CONDUCTION 3.0 RESISTIVE, INDUCTIVE 2.5 LOADS 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) CASE TEMPERATURE (C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE IRGT III 102 IFGT I, IRGT I 7 5 4 3 2 GATE CURRENT (mA) 103 7 5 4 3 2 TYPICAL EXAMPLE CURVES APPLY 120 REGARDLESS OF CONDUCTION ANGLE 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE 7 5 3 2 AMBIENT TEMPERATURE (C) 40 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 160 103 7 5 4 3 TYPICAL EXAMPLE 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE DISTRIBUTION T2+, G- TYPICAL EXAMPLE 102 7 5 3 2 101 T2 , G TYPICAL T2- , G- EXAMPLE + + 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) 7 5 3 2 100 (%) JUNCTION TEMPERATURE (C) 103 LACHING CURRENT (mA) 60 RMS ON-STATE CURRENT (A) 105 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF 120 CONDUCTION ANGLE 100 RESISTIVE, INDUCTIVE LOADS 80 0 100 (%) 106 REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 120 120 t2.3 140 100 100 t2.3 60 60 t2.3 120 ALL FINS ARE BLACK PAINTED ALUMINUM 100 AND GREASED 80 NATURAL CONVECTION 60 CURVES APPLY REGARDLESS 40 OF CONDUCTION ANGLE RESISTIVE, 20 INDUCTIVE LOADS 0 1 2 3 4 5 6 7 0 8 100 (%) AMBIENT TEMPERATURE (C) The product guaranteed maximum junction temperature 150C (See warning.) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE TYPICAL EXAMPLE Tj = 125C BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 III QUADRANT 100 80 60 I QUADRANT 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 100 (%) 160 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150C) 160 TYPICAL EXAMPLE Tj = 150C 140 BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125C) 140 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) INSULATED TYPE, PLANAR PASSIVATION TYPE 120 100 III QUADRANT 80 60 I QUADRANT 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) RATE OF RISE OF OFF-STATE VOLTAGE (V/s) COMMUTATION CHARACTERISTICS (Tj = 125C) COMMUTATION CHARACTERISTICS (Tj = 150C) 7 5 3 2 SUPPLY VOLTAGE TIME (di/dt)c TIME MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME VD 101 7 5 TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz III QUADRANT 3 MINIMUM CHARAC2 TERISTICS VALUE 100 I QUADRANT 7 0 10 2 3 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) 100 (%) The product guaranteed maximum junction temperature 150C (See warning.) 7 5 3 2 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c 101 7 5 TIME (di/dt)c TIME TIME VD TYPICAL EXAMPLE Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz III QUADRANT 3 2 I QUADRANT 100 7 0 10 MINIMUM CHARACTERISTICS VALUE 2 3 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III IRGT I IFGT I 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (s) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE The product guaranteed maximum junction temperature 150C (See warning.) INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC 6 A 6V RG V TEST PROCEDURE 1 LOAD A 6V V RG TEST PROCEDURE 2 C1 R1 C1 = 0.1~0.47F R1 = 47~100 6 C0 R0 C0 = 0.1F R0 = 100 A 6V V RG TEST PROCEDURE 3 Mar. 2002