12. SWITCHING TRANSISTORS GLIVPE No, ve TNE Oh MAX MAX MAX MAX |[MAX. Pc BIAS 13 J [2 1] . DWG #7. C LINE TYPE RISE DELAY| STORE| FALL {IN FREE MAX. Cob bb {STRUCTURE|MiMAX. |Y200 EO No. No. fab TIME TIME TIME TIME AIR @ Veb le hFE SAT. Xx P-PNP A|TEMP) s/a AD (Ha) i bs fe be a RES. Cob {N-NPN T TO200 |DE Z s, Ss) s) s) ( (Vv) (A) (Q) (F) (s) C) _|Ser. T# |BCWEOAA 250ms 5On 35n [400n BOn T50m 5.0 @ [2.0mZ [500 35 N-PED Si (eh X156a |A 2# |BCW60AB 250m8 50n 35n |400n 80n 150m 5.0 D |2.0mg |500 35 N-PED Si |150J |X156a jA __3# |BCW6OAC 250m$ 500_ 35n_ {400n 80n_ _|150m 5.0 Z |2.0md |500 _ 35 N-PED [Si | 1505 |x156a_|A 4# |[BCW60AD 250m8 50n 35n |400n 80n 7150m 5.0 Z |2.0mg [500 35 N-PED Si [1505 |X156a JA 5 |CT760 8.0M 50n 10n |450n 120n [400m 5.0 Z |1.0ug | 50 A 8.0p Pp Si To92 IA | 6 |2N337 _10MA 5On 29n 80n 125m 5.0 D | 10mg] 20 A 150: |3.0pr4 N-GD _|si [1509 {TO5 [A 7 {2N1103 T2M8A] 500 29n 80n 125m 3.0 f { 10mg, 30 A 150 3.0p4 N Si [TOSTTOS TA 8 |ICT764 20M 50n 10n ]450n 120n [400m 5.0 Z |150m | 25 A 8.0p P Si TOS2 JA | 9 {[2N1104 30M8A|_ 50nd 20n 80n 125m 3.02 | 10mg] 45 A [150 {3.0pd t N Si_|150S [TO5 A 10 )2N5334 40.0M35A 5On 950n 700n 6@ |200 |2.0md| 15 #4 75p N ~~ TSi]200J 71039 J} AS 11. [2N5335 40.0MS8A 5On 950n |100n 6D |2.0 G |2.0mG] 15 #A 75p N Si }200J |TO39 AD 12. {b43C1 40M5 50ndt 500nt 5Ont_ |1.7 # 1001100 | 10 A |500m_/125psa tpt, |Si_ [1504 |B15b [Be 13 (D43C2 40M8 50nSt 500nt 500t 11.7 # TOD [1.0 S120 A \500m 1 125ps PT [Si [150J |B15b [BY 14 |D43C3 40M8 5OnSt 500nt 50nt 11.7 # 10Z |20@H|20A |500m |125ps7Z Pt Si |150J/B15b |BS 15 |bD43c4 ___40M8 5O0ngt 500nt 50nt 11.7 # 102 |10f | 10 A |500m_ |125ps7 {Pt Si_|150J|B15b [BS 16 ~1043C5 40M8 5OnSt 500nt bOnt (17 # TOS 10D) 20 A [e00m 1125 ps TF Si T150J |B15b [BS 17 1D43C6 40M8 5Ondt 500nt 5Ont (1.7 # 10 |20G | 20A |500m |125psa Pt Si |150J|B15b |B 118 |043C7 40M5 5OnSt 500nt SOnt [1.7 # 10% |10@ | 10 A |00m_ /125psZ Pt __sd|Si [150N |B15b |B 19 (D43C8 40M8 5OnSt 500nt 5Ont | 1.7 # TOD 10 B [20a {500m |125ps Pt Si |T50J1B15b [Bd 20 |D43C9 40M8 50ngt 500nt 5Ont 11.7 # 10@ {20 | 20A |500m |125psZ Pt Si [1503 |B15b BS |.21 _|D43C10 40M 50nt 500nt 5Ont 11.7 # 10@ 1108 | 10 A |500m_ [125ps@ {Pt Si [1503 |B15b_ [BS 22. (D43c11 40M8 5On@t 500nt 5Ont [1.7 # 100 (1.0 @ [20 A (500m [125ps PT Si 11503 1B15b [BS 23 |D43C12 40M 5Ondt 500nt 5Ont [1.7 # 10 |20%@ | 20a |500m |125psq Pt Si |150J [B15b BS 124 |D45C1 40M 50nSt 500nt 50nt_ | 1.6 10 110% | 10 A. [S500m# |125psH|__ Pts ss{Si_ | 1504 1B 22 BS 25 (D45C2 40MS 5OnSt 500nt 50nt 11.6 T0f [10 | 20 A [500m# 1125ps Pt Si | 150 B22 BS 26 |D45C3 40M8 5Ongt 500nt 5Ont 11.6 10Z (20fG | 200A |500m# |125ps7Z Pt Si |150J [B22 BD 127. |D45c4 40M8 50ndt 500nt 5Ont_ 11.6 108/102 | 10 A. |500m# ]125ps4| PL. Si |150J |B22 Bg 28 ~(D45C5 4OM8 50n@t 500nt 50nt 11.6 TO @ [103 | 20 A [500m# 1125ps Pt Si ]150J1B22 |Ba | 29 |D45c6 40M8 50ngt 500nt 5Ont |1.6 10% |20G |] 204 |500m# )125psi/ Pt Si ]150J) 'B22 BS | 30 D45C7__ 40M8 50nd 500nt 5Ont_ 11.6 102 1108 | 10 A |500m# |125psi4 _iPt Si {150J|B22 [Bg 31 (D45C8 40M8 5Ongt 500nt 50nt 17.6 10D 11.0 @ [20 A [500m# [125ps PT 1 11503 [B22 |BS 32 |D45C9 40M8 50ngt 500nt 50nt 11.6 10% (208 | 200A |500m# |125ps4 Pt Si |150J |B22 BD | 33. |D45C10 40M8 50ngt ___|500nt 5Ont [1.6 10ZG 1106 | 10 A |500m# |125psa]_ Pt si {1504 (B22 BS 34 {045C11 40M8 5Ongt 500nt 50nt [1.6 10% [1.08 120 A [500m# /125ps PT Si |150J [B22 BS 35 |p46C12 40M8 5Ongt 500nt 50nt 11.6 10Z 120% | 204 |S00m# |125psi4 Pt Si [150J [B22 BY | 36 |SP45C1_ 40M8 50nd 500n 50n 302 11.0 |1.0 | 10 A {500m _ P-PL_ Si |150J |220b [DS 37 [SP45C2 40M8 5One 500n 50n 302 (1.0 11.0 20 A [500m P-PL Si [1505 ]220b DS 38 |SP45C3 40M8 50nd 500n 50n 30D /1.0 |2.0 20 A |500m P-PL Si |1503 }220b |D% | 39. |SP45C4__ __40M8 50nd 500n 50n 30% /|1.0G |1.0 104 {500m | |_| P-PL Si |150J [Y220b [DS 40 [SP45C5 40M 50nd 500n 50n 300 |1.0 1.0 20 A~~1500m