PRODUCTPREVIEW
LMH6619Q
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
LMH6619Q 130 MHz, 1.25 mA RRIO Operational Amplifier
Check for Samples: LMH6619Q
1FEATURES • AEC-Q100 grade 2 qualified −40°C to +105°C
• Manufactured on an automotive grade flow
23• VS= 5V, RL=1kΩ, TA= 25°C and AV= +1,
unless otherwise specified. APPLICATIONS
• Operating voltage range 2.7V to 11V • ADC driver
• Supply current per channel 1.25 mA • DAC buffer
• Small signal bandwidth 130 MHz • Active filters
• Input offset voltage (limit at 25°C) ±0.75 mV • High speed sensor amplifier
• Slew rate 55 V/µs • Current sense amplifier
• Settling time to 0.1% 90 ns • Portable video
• Settling time to 0.01% 120 ns • STB, TV video amplifier
• SFDR (f = 100 kHz, AV= +1, VOUT =2VPP) 100
dBc • Automotive
• 0.1 dB bandwidth (AV= +2) 15 MHz
• Low voltage noise 10 nV/√Hz
• Rail-to-Rail input and output
DESCRIPTION
The LMH6619Q (dual) is a 130 MHz rail-to-rail input and output amplifier designed for ease of use in a wide
range of applications requiring high speed, low supply current, low noise, and the ability to drive complex ADC
and video loads. The operating voltage range extends from 2.7V to 11V and the supply current is typically 1.25
mA per channel at 5V. The LMH6619Q is a member of the PowerWise®family and have an exceptional power-
to-performance ratio.
The amplifier’s voltage feedback design topology provides balanced inputs and high open loop gain for ease of
use and accuracy in applications such as active filter design. Offset voltage is typically 0.1 mV and settling time
to 0.01% is 120 ns which combined with an 100 dBc SFDR at 100 kHz makes the part suitable for use as an
input buffer for popular 8-bit, 10-bit, 12-bit and 14-bit mega-sample ADCs.
The input common mode range extends 200 mV beyond the supply rails. On a single 5V supply with a ground
terminated 150Ωload the output swings to within 37 mV of the ground rail, while a mid-rail terminated 1 kΩload
will swing to 77 mV of either rail, providing true single supply operation and maximum signal dynamic range on
low power rails. The amplifier output will source and sink 35 mA and drive up to 30 pF loads without the need for
external compensation.
The LMH6619Q is offered in the 8-Pin SOIC package.
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2PowerWise, WEBENCH are registered trademarks of Texas Instruments.
3All other trademarks are the property of their respective owners.
PRODUCT PREVIEW information concerns products in the Copyright © 2012, Texas Instruments Incorporated
formative or design phase of development. Characteristic data and
other specifications are design goals. Texas Instruments reserves
the right to change or discontinue these products without notice.
PRODUCTPREVIEW
ADC121S625
0.1 PF10 PF
V+
33:
V+
560:220 pF
560:
-
+
0.1 PF10 PF
V+
V+
560:
560:33:
560:
220 pF
560:
INPUT 10 PF
-
+
LMH6619
LMH6619
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
www.ti.com
Typical Application
Figure 1. Single to Differential ADC Driver
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1)
ESD Tolerance (2)
Human Body Model
For input pins only 2000V
For all other pins 2000V
Machine Model 200V
Supply Voltage (VS= V+– V−) 12V
Junction Temperature (3) 150°C max
Storage Temperature Range –65°C to 150°C
Soldering Information:
See product folder at www.ti.com and www.ti.com/ lit/an/snoa549c /snoa549c.pdf.
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
(2) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
(3) The maximum power dissipation is a function of TJ(MAX),θJA. The maximum allowable power dissipation at any ambient temperature is
PD= (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
Operating Ratings (1)
Supply Voltage (VS= V+– V−) 2.7V to 11V
Ambient Temperature Range (2) −40°C to +105°C
Package Thermal Resistance (θJA)
8-Pin SOIC 160°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
(2) The maximum power dissipation is a function of TJ(MAX),θJA. The maximum allowable power dissipation at any ambient temperature is
PD= (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
+3V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ= +25°C, V+= 3V, V−= 0V, VCM = VO= V+/2, AV= +1 (RF= 0Ω),
otherwise RF= 2 kΩfor AV≠+1, RL= 1 kΩ|| 5 pF. Boldface Limits apply at temperature extremes. (1)
Symbol Parameter Condition Min Typ Max Units
(2) (3) (2)
Frequency Domain Response
SSBW –3 dB Bandwidth Small Signal AV= 1, RL= 1 kΩ, VOUT = 0.2 VPP 120 MHz
AV= 2, −1, RL= 1 kΩ, VOUT = 0.2 VPP 56
GBW Gain Bandwidth AV= 10, RF= 2 kΩ, RG= 221Ω, 55 63 MHz
RL= 1 kΩ, VOUT = 0.2 VPP
LSBW −3 dB Bandwidth Large Signal AV= 1, RL= 1 kΩ, VOUT = 2 VPP 13 MHz
AV= 2, RL= 150Ω, VOUT = 2 VPP 13
Peak Peaking AV= 1, CL= 5 pF 1.5 dB
0.1 0.1 dB Bandwidth AV= 2, VOUT = 0.5 VPP , 15 MHz
dBBW RF= RG= 825Ω
DG Differential Gain AV= +2, 4.43 MHz, 0.6V < VOUT < 2V, 0.1 %
RL= 150Ωto V+/2
DP Differential Phase AV= +2, 4.43 MHz, 0.6V < VOUT < 2V, 0.1 deg
RL= 150Ωto V+/2
Time Domain Response
tr/tfRise & Fall Time 2V Step, AV= 1 36 ns
SR Slew Rate 2V Step, AV= 1 36 46 V/μs
ts_0.1 0.1% Settling Time 2V Step, AV=−1 90 ns
ts_0.01 0.01% Settling Time 2V Step, AV=−1 120
Noise and Distortion Performance
SFDR Spurious Free Dynamic Range fC= 100 kHz, VOUT= 2 VPP, RL= 1 kΩ100
fC= 1 MHz, VOUT = 2 VPP, RL= 1 kΩ61 dBc
fC= 5 MHz, VOUT = 2 VPP, RL= 1 kΩ47
enInput Voltage Noise Density f = 100 kHz 10 nV/
inInput Current Noise Density f = 100 kHz 1 pA/
CT Crosstalk f = 5 MHz, VIN = 2 VPP 80 dB
Input, DC Performance
VOS Input Offset Voltage VCM = 0.5V (pnp active) 0.1 ±0.75 mV
VCM = 2.5V (npn active) ±1.3
TCVOS Input Offset Voltage Temperature Drift (4) 0.8 μV/°C
IBInput Bias Current VCM = 0.5V (pnp active) −1.4 −2.6 μA
VCM = 2.5V (npn active) +1.0 +1.8
IOS Input Offset Current 0.01 ±0.27 μA
CIN Input Capacitance 1.5 pF
RIN Input Resistance 8 MΩ
CMVR Common Mode Voltage Range DC, CMRR ≥65 dB −0.2 3.2 V
CMRR Common Mode Rejection Ratio VCM Stepped from −0.1V to 1.4V 78 96 dB
VCM Stepped from 2.0V to 3.1V 81 107
AOL Open Loop Voltage Gain RL= 1 kΩto +2.7V or +0.3V 85 98 dB
RL= 150Ωto +2.6V or +0.4V 76 82
Output DC Characteristics
(1) Boldface limits apply to temperature range of −40°C to 105°C
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
(4) Voltage average drift is determined by dividing the change in VOS by temperature change.
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+3V Electrical Characteristics (continued)
Unless otherwise specified, all limits are guaranteed for TJ= +25°C, V+= 3V, V−= 0V, VCM = VO= V+/2, AV= +1 (RF= 0Ω),
otherwise RF= 2 kΩfor AV≠+1, RL= 1 kΩ|| 5 pF. Boldface Limits apply at temperature extremes. (1)
Symbol Parameter Condition Min Typ Max Units
(2) (3) (2)
VOUT Output Voltage Swing High (Voltage from RL= 1 kΩto V+/2 50 56
V+Supply Rail) 62
RL=150Ωto V+/2 160 172
198
Output Voltage Swing Low (Voltage from RL= 1 kΩto V+/2 62 68 mV from
V−Supply Rail) 76 either rail
RL=150Ωto V+/2 175 189
222
RL= 150Ωto V−34 44
48
IOUT Linear Output Current VOUT = V+/2 (5) ±25 ±35 mA
ROUT Output Resistance f = 1 MHz 0.17 Ω
Power Supply Performance
PSRR Power Supply Rejection Ratio DC, VCM = 0.5V, VS= 2.7V to 11V 84 104 dB
ISSupply Current RL=∞1.2 1.5
(per channel) 1.75
(5) Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage
the part.
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LMH6619Q
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
+5V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ= +25°C, V+= 5V, V−= 0V, VCM = VO= V+/2, AV= +1 (RF= 0Ω),
otherwise RF= 2 kΩfor AV≠+1, RL= 1 kΩ|| 5 pF. Boldface Limits apply at temperature extremes.
Symbol Parameter Condition Min Typ Max Units
(1) (2) (1)
Frequency Domain Response
SSBW –3 dB Bandwidth Small Signal AV= 1, RL= 1 kΩ, VOUT = 0.2 VPP 130 MHz
AV= 2, −1, RL= 1 kΩ, VOUT = 0.2 VPP 53
GBW Gain Bandwidth AV= 10, RF= 2 kΩ, RG= 221Ω, 54 57 MHz
RL= 1 kΩ, VOUT = 0.2 VPP
LSBW −3 dB Bandwidth Large Signal AV= 1, RL= 1 kΩ, VOUT = 2 VPP 15 MHz
AV= 2, RL= 150Ω, VOUT = 2 VPP 15
Peak Peaking AV= 1, CL= 5 pF 0.5 dB
0.1 0.1 dB Bandwidth AV= 2, VOUT = 0.5 VPP, 15 MHz
dBBW RF= RG= 1 kΩ
DG Differential Gain AV= +2, 4.43 MHz, 0.6V < VOUT < 2V, 0.1 %
RL= 150Ωto V+/2
DP Differential Phase AV= +2, 4.43 MHz, 0.6V < VOUT < 2V, 0.1 deg
RL= 150Ωto V+/2
Time Domain Response
tr/tfRise & Fall Time 2V Step, AV= 1 30 ns
SR Slew Rate 2V Step, AV= 1 44 55 V/μs
ts_0.1 0.1% Settling Time 2V Step, AV=−1 90 ns
ts_0.01 0.01% Settling Time 2V Step, AV=−1 120
Distortion and Noise Performance
SFDR Spurious Free Dynamic Range fC= 100 kHz, VOUT = 2 VPP, RL= 1 kΩ100
fC= 1 MHz, VOUT = 2 VPP, RL= 1 kΩ88 dBc
fC= 5 MHz, VO= 2 VPP, RL= 1 kΩ61
enInput Voltage Noise Density f = 100 kHz 10 nV/
inInput Current Noise Density f = 100 kHz 1 pA/
CT Crosstalk f = 5 MHz, VIN = 2 VPP 80 dB
Input, DC Performance
VOS Input Offset Voltage VCM = 0.5V (pnp active) 0.1 ±0.75 mV
VCM = 4.5V (npn active) ±1.3
TCVOS Input Offset Voltage Temperature Drift (3) 0.8 µV/°C
IBInput Bias Current VCM = 0.5V (pnp active) −1.5 −2.4 μA
VCM = 4.5V (npn active) +1.0 +1.9
IOS Input Offset Current 0.01 ±0.26 μA
CIN Input Capacitance 1.5 pF
RIN Input Resistance 8 MΩ
CMVR Common Mode Voltage Range DC, CMRR ≥65 dB −0.2 5.2 V
CMRR Common Mode Rejection Ratio VCM Stepped from −0.1V to 3.4V 81 98 dB
VCM Stepped from 4.0V to 5.1V 84 108
AOL Open Loop Voltage Gain RL= 1 kΩto +4.6V or +0.4V 84 100 dB
RL= 150Ωto +4.5V or +0.5V 78 83
Output DC Characteristics
(1) Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
(3) Voltage average drift is determined by dividing the change in VOS by temperature change.
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+5V Electrical Characteristics (continued)
Unless otherwise specified, all limits are guaranteed for TJ= +25°C, V+= 5V, V−= 0V, VCM = VO= V+/2, AV= +1 (RF= 0Ω),
otherwise RF= 2 kΩfor AV≠+1, RL= 1 kΩ|| 5 pF. Boldface Limits apply at temperature extremes.
Symbol Parameter Condition Min Typ Max Units
(1) (2) (1)
VOUT Output Voltage Swing High Voltage from RL= 1 kΩto V+/2 60 73
V+Supply Rail) 82
RL= 150Ωto V+/2 230 255
295
Output Voltage Swing Low Voltage from RL= 1 kΩto V+/2 77 85 mV from
V−Supply Rail) 98 either rail
RL= 150Ωto V+/2 255 275
326
RL= 150Ωto V−37 48
50
IOUT Linear Output Current VOUT = V+/2 (4) ±25 ±35 mA
ROUT Output Resistance f = 1 MHz 0.17 Ω
Power Supply Performance
PSRR Power Supply Rejection Ratio DC, VCM = 0.5V, VS= 2.7V to 11V 84 104 dB
ISSupply Current RL=∞1.3 1.5
(per channel) 1.75
(4) Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage
the part.
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LMH6619Q
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
±5V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ= +25°C, V+= 5V, V−=−5V, VCM = VO= 0V, AV= +1 (RF= 0Ω),
otherwise RF= 2 kΩfor AV≠+1, RL= 1 kΩ|| 5 pF. Boldface Limits apply at temperature extremes.
Symbol Parameter Condition Min Typ Max Units
(1) (2) (1)
Frequency Domain Response
SSBW –3 dB Bandwidth Small Signal AV= 1, RL= 1 kΩ, VOUT = 0.2 VPP 140 MHz
AV= 2, −1, RL= 1 kΩ, VOUT = 0.2 VPP 53
GBW Gain Bandwidth AV= 10, RF= 2 kΩ, RG= 221Ω, 54 58 MHz
RL= 1 kΩ, VOUT = 0.2 VPP
LSBW −3 dB Bandwidth Large Signal AV= 1, RL= 1 kΩ, VOUT = 2 VPP 16 MHz
AV= 2, RL= 150Ω, VOUT = 2 VPP 15
Peak Peaking AV= 1, CL= 5 pF 0.05 dB
0.1 0.1 dB Bandwidth AV= 2, VOUT = 0.5 VPP, 15 MHz
dBBW RF= RG= 1.21 kΩ
DG Differential Gain AV= +2, 4.43 MHz, 0.6V < VOUT < 2V, 0.1 %
RL= 150Ωto V+/2
DP Differential Phase AV= +2, 4.43 MHz, 0.6V < VOUT < 2V, 0.1 deg
RL= 150Ωto V+/2
Time Domain Response
tr/tfRise & Fall Time 2V Step, AV= 1 30 ns
SR Slew Rate 2V Step, AV= 1 45 57 V/μs
ts_0.1 0.1% Settling Time 2V Step, AV=−1 90 ns
ts_0.01 0.01% Settling Time 2V Step, AV=−1 120
Noise and Distortion Performance
SFDR Spurious Free Dynamic Range fC= 100 kHz, VOUT = 2 VPP, RL= 1 kΩ100
fC= 1 MHz, VOUT = 2 VPP, RL= 1 kΩ88 dBc
fC= 5 MHz, VOUT = 2 VPP, RL= 1 kΩ70
enInput Voltage Noise Density f = 100 kHz 10 nV/
inInput Current Noise Density f = 100 kHz 1 pA/
CT Crosstalk f = 5 MHz, VIN = 2 VPP 80 dB
Input DC Performance
VOS Input Offset Voltage VCM =−4.5V (pnp active) 0.1 ±0.75 mV
VCM = 4.5V (npn active) ±1.3
TCVOS Input Offset Voltage Temperature Drift (3) 0.9 µV/°C
IBInput Bias Current VCM =−4.5V (pnp active) −1.5 −2.4 μA
VCM = 4.5V (npn active) +1.0 +1.9
IOS Input Offset Current 0.01 ±0.26 μA
CIN Input Capacitance 1.5 pF
RIN Input Resistance 8 MΩ
CMVR Common Mode Voltage Range DC, CMRR ≥65 dB −5.2 5.2 V
CMRR Common Mode Rejection Ratio VCM Stepped from −5.1V to 3.4V 84 100 dB
VCM Stepped from 4.0V to 5.1V 83 108
AOL Open Loop Voltage Gain RL= 1 kΩto +4.6V or −4.6V 86 95 dB
RL= 150Ωto +4.3V or −4.3V 79 84
Output DC Characteristics
(1) Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
(3) Voltage average drift is determined by dividing the change in VOS by temperature change.
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OUT B
1
2
3
4 5
6
7
8
OUT A
-IN A
+IN A
V-
V+
-IN B
+IN B
-+
+-
A
B
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
www.ti.com
±5V Electrical Characteristics (continued)
Unless otherwise specified, all limits are guaranteed for TJ= +25°C, V+= 5V, V−=−5V, VCM = VO= 0V, AV= +1 (RF= 0Ω),
otherwise RF= 2 kΩfor AV≠+1, RL= 1 kΩ|| 5 pF. Boldface Limits apply at temperature extremes.
Symbol Parameter Condition Min Typ Max Units
(1) (2) (1)
VOUT Output Voltage Swing High (Voltage from RL= 1 kΩto GND 100 111
V+Supply Rail) 126
RL= 150Ωto GND 430 457
526
Output Voltage Swing Low (Voltage from RL= 1 kΩto GND 115 126 mV from
V−Supply Rail) 141 either rail
RL= 150Ωto GND 450 484
569
RL= 150Ωto V−45 61
62
IOUT Linear Output Current VOUT = V+/2 (4) ±25 ±35 mA
ROUT Output Resistance f = 1 MHz 0.17 Ω
Power Supply Performance
PSRR Power Supply Rejection Ratio DC, VCM =−4.5V, VS= 2.7V to 11V 84 104 dB
ISSupply Current RL=∞1.45 1.65
(per channel) 2.0
(4) Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage
the part.
Connection Diagram
8-Pin SOIC
Figure 2. Top View
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110 100 1000
FREQUENCY (MHz)
-21
-18
-15
-12
-9
-6
-3
0
3
GAIN (dB)
AV = +1
V+ = +2.5V
V- = -2.5V
VOUT = 0.2 VPP
RL = 1 k:
CL = 10 pF
-40°C
25°C
85°C
125°C
110 100 1000
FREQUENCY (MHz)
-21
-18
-15
-12
-9
-6
-3
0
3
GAIN (dB)
85°C
25°C
125°C
-40°C
AV = +1
V+ = +2.5V
V- = -2.5V
VOUT = 0.2 VPP
RL = 150:
CL = 10 pF
110 100 1000
FREQUENCY (MHz)
-18
-15
-12
-9
-6
-3
0
3
NORMALIZED GAIN (dB)
V+ = +5V
V- = -5V V+ = +2.5V
V- = -2.5V
V+ = +1.5V
V- = -1.5V
AV = +2
RL = 1 k:
VOUT = 0.2V
110 100 1000
FREQUENCY (MHz)
-18
-15
-12
-9
-6
-3
0
3
NORMALIZED GAIN (dB)
V+ = +5V
V- = -5V
V+ = +2.5V
V- = -2.5V
V+ = +1.5V
V- = -1.5V
AV = +2
RF = RG = 2 k:
RL = 150:
VOUT = 0.4V
110 100 1000
FREQUENCY (MHz)
-9
-6
-3
0
3
GAIN (dB)
AV = +1
RL = 150:||3 pF
VOUT = 0.2V
V+ = +1.5V
V- = -1.5V V+ = +2.5V
V- = -2.5V
V+ = +5V
V- = -5V
110 100 1000
FREQUENCY (MHz)
-21
-18
-15
-12
-9
-6
-3
0
3
GAIN (dB)
±1.5V
±2.5V
±5V
A = +1
VOUT = 0.2V
RL = 1 k:
CL = 5 pF
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Typical Performance Characteristics
At TJ= 25°C, AV= +1 (RF= 0Ω), otherwise RF= 2 kΩfor AV≠+1, unless otherwise specified.
Closed Loop Frequency Response for Closed Loop Frequency Response for
Various Supplies Various Supplies
Closed Loop Frequency Response for Closed Loop Frequency Response for
Various Supplies Various Supplies
Closed Loop Frequency Response for Closed Loop Frequency Response for
Various Temperatures Various Temperatures
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1 10 100 1000
-9
-7
-5
-3
-1
1
3
5
7
9
11
GAIN (dB)
FREQUENCY (MHz)
RISO = 0
RISO = 25
RISO = 50
RISO = 100
RISO = 75
V+ = +5V
V- = -5V
VOUT = 0.2 VPP
CL = 100 pF
0.1 110
FREQUENCY (MHz)
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
DISTORTION (dBc)
VOUT = 2 VPP
RL = 1 k:
RF = 0:
A = +1
V+ = +1.5V
V- = -1.5V
V+ = +2.5V
V- = -2.5V
V+ = +5V
V- = -5V
1 10 100 1000
-9
-7
-5
-3
-1
1
3
5
GAIN (dB)
FREQUENCY (MHz)
4
2
0
-2
-4
-6
-8
CL = 5 pF
CL = 10 pF
CL = 20 pF
CL = 30 pF
V+ = +5V
V- = -5V
RL = 1 k:
VOUT = 0.2V
CL = 0 pF
110 100 1000
FREQUENCY (MHz)
-18
-15
-12
-9
-6
-3
0
3
NORMALIZED GAIN (dB)
V+ = +5V
V- = -5V
V+ = +2.5V
V- = -2.5V
V+ = +1.5V
V- = -1.5V
AV = +2
RF = RG = 2 k:
RL = 1 k:
VOUT = 2V
110 100 1000
FREQUENCY (MHz)
-21
-18
-15
-12
-9
-6
-3
0
3
NORMALIZED GAIN (dB)
A = 10
A = 5 A = 2
A = 1
V+ = +2.5V
V- = -2.5V
RL = 1 k:
CL = 5 pF
VOUT = 0.2V
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
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Typical Performance Characteristics (continued)
At TJ= 25°C, AV= +1 (RF= 0Ω), otherwise RF= 2 kΩfor AV≠+1, unless otherwise specified.
Closed Loop Gain
vs.
Frequency for
Various Gains Large Signal Frequency Response
Small Signal Frequency Response with
±0.1 dB Gain Flatness for Various Supplies Various Capacitive Load
HD2
Small Signal Frequency Response with vs.
Capacitive Load and Various RISO Frequency and Supply Voltage
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PRODUCTPREVIEW
0.1 1 10
-110
-100
-90
-80
-70
-60
-50
-40
-30
DISTORTION (dBc)
FREQUENCY (MHz)
VOUT = 2 VPP
V+ = +2.5V
V- = -2.5V
RL = 1 k:
RF = 2 k:
G = +1, HD2
G = +2, HD2
G = +10, HD2
0.1 1 10
-110
-100
-90
-80
-70
-60
-50
-40
-30
DISTORTION (dBc)
FREQUENCY (MHz)
VOUT = 2 VPP
V+ = +2.5V
V- = -2.5V
RL = 1 k:
RF = 2 k:
G = +1, HD3
G = +2, HD3
G = +10, HD3
0 1 2 3 4 5 6 7 8 9 10
-120
-110
-100
-90
-80
-70
-60
-50
DISTORTION (dBc)
INPUT COMMON MODE VOLTAGE (V)
fIN = 1 MHz
VOUT = 1 VPP
RL = 1 k:
RF = 0
A = +1
HD2
V+ = +5V
V- = -5V
HD3
V+ = +5V
V- = -5V
HD3
V+ = +2.5V
V- = -2.5V
V- = -2.5V
HD2
V+ = +2.5V
0 1 2 3 4 5 6 7 8 9 10
-120
-110
-100
-90
-80
-70
-60
-50
DISTORTION (dBc)
INPUT COMMON MODE VOLTAGE (V)
fIN = 100 kHz
VOUT = 1 VPP
RL = 1 k:
RF = 0
A = +1
HD3
V+ = +5V
V- = -5V
HD2
V+ = +5V
V- = -5V
HD2
V+ = +2.5V
V- = -2.5V
HD3
V+ = +2.5V
V- = -2.5V
0.1 110
FREQUENCY (MHz)
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
DISTORTION (dBc)
VOUT = 2 VPP
RL = 1 k:
RF = 0:
A = +1
V+ = +1.5V
V- = -1.5V
V+ = +2.5V
V- = -2.5V
V+ = +5V
V- = -5V
0.1 110
FREQUENCY (MHz)
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
DISTORTION (dBc)
VOUT = 2 VPP
V+ = +2.5V
V- = -2.5V
RF = 0:
A = +1
HD2, RL = 1 k:
HD3, RL = 1 k:
HD3, RL = 150:
HD2, RL = 150:
LMH6619Q
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Typical Performance Characteristics (continued)
At TJ= 25°C, AV= +1 (RF= 0Ω), otherwise RF= 2 kΩfor AV≠+1, unless otherwise specified.
HD3 HD2 and HD3
vs. vs.
Frequency and Supply Voltage Frequency and Load
HD2 and HD3 HD2 and HD3
vs. vs.
Common Mode Voltage Common Mode Voltage
HD2 HD3
vs. vs.
Frequency and Gain Frequency and Gain
Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 11
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PRODUCTPREVIEW
10 MHz
0 1 2 3 4 5
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
HD2 (dBc)
VOUT (VPP)
V+ = +2.5V
V- = -2.5V
AV = +2
RL = 150:
5 MHz
1 MHz
500 kHz
100 kHz
0 1 2 3 4 5
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
HD3 (dBc)
VOUT (VPP)
V+ = +2.5V
V- = -2.5V
AV = +2
RL = 1 k:
5 MHz
1 MHz
500 kHz
100 kHz
10 MHz
10 MHz
0 1 2 3 4 5
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
HD3 (dBc)
VOUT (VPP)
V+ = +2.5V
V- = -2.5V
AV = -1
RL = 1 k:5 MHz
1 MHz
500 kHz
100 kHz
10 MHz
0 1 2 3 4 5
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
HD2 (dBc)
VOUT (VPP)
V+ = +2.5V
V- = -2.5V
AV = +2
RL = 1 k:
5 MHz
1 MHz
500 kHz
100 kHz
100 kHz
500 kHz
1 MHz
0 1 2 3 4 5
-100
-90
-80
-70
-60
-50
-40
-30
HD2 (dBc)
VOUT (VPP)
V+ = +2.5V
V- = -2.5V
AV = -1
RL = 1 k:
10 MHz
5 MHz
120
1k 100k 10M 1G
FREQUENCY (Hz)
-20
20
60
GAIN (dB)
100M1M
10k
100
80
40
0
GAIN
PHASE
120
-40
20
60
100
80
40
0
-20
PHASE (°)
V+ = +2.5V
V- = -2.5V
RL = 1 k:
CL = 5 pF
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
www.ti.com
Typical Performance Characteristics (continued)
At TJ= 25°C, AV= +1 (RF= 0Ω), otherwise RF= 2 kΩfor AV≠+1, unless otherwise specified. HD2
vs.
Open Loop Gain/Phase Output Swing
HD3 HD2
vs. vs.
Output Swing Output Swing
HD2 HD3
vs. vs.
Output Swing Output Swing
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PRODUCTPREVIEW
-2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5
-6.0
-4.0
-2.0
0
2.0
4.0
6.0
VOS (mV)
VOUT (V)
-40°C 25°C
125°C
V+ = +2.5V
V- = -2.5V
RL = 1 k:
-2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5
-6.0
-4.0
-2.0
0
2.0
4.0
6.0
VOS (mV)
VOUT (V)
-40°C 25°C
125°C
V+ = +2.5V
V- = -2.5V
RL = 150:
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
20
40
60
80
100
120
140
SETTLING TIME (ns)
OUTPUT SWING (VPP)
AV = -1
V+ = +2.5V
V- = -2.5V
RISING, 0.1%
FALLING, 0.1%
10 1k 1M
1
10
100
1000
10k
100 10M
FREQUENCY (Hz)
100k
VOLTAGE NOISE (nV/
Hz)
1
10
100
1000
CURRENT NOISE (pA/
Hz)
VOLTAGE NOISE
CURRENT NOISE
V+ = +2.5V
V- = -2.5V
10 MHz
0 1 2 3 4 5
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
HD3 (dBc)
VOUT (VPP)
V+ = +2.5V
V- = -2.5V
AV = +2
RL = 150:
5 MHz
1 MHz
500 kHz
100 kHz
0 1 2 3 4 5
-100
-90
-80
-70
-60
-50
-40
-30
THD (dBc)
OUTPUT SWING (VPP)
V+ = +2.5V
V- = -2.5V
AV = -1
RL = 1 k:
5 MHz
10 MHz
100 kHz
1 MHz 500 kHz
LMH6619Q
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Typical Performance Characteristics (continued)
At TJ= 25°C, AV= +1 (RF= 0Ω), otherwise RF= 2 kΩfor AV≠+1, unless otherwise specified.
HD3 THD
vs. vs.
Output Swing Output Swing
Settling Time
vs. Input Noise
Input Step Amplitude vs.
(Output Slew and Settle Time) Frequency
VOS VOS
vs. vs.
VOUT VOUT
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PRODUCTPREVIEW
-0.70
0
1
2
3
4
5
6
7
8
9
RELATIVE FREQUENCY (%)
VOS (mV)
-0.60
-0.50
-0.40
-0.30
-0.20
-0.100
0.10
0.20
0.30
0.40
0.50
0.60
0.70
02 4 68 10 12
VS (V)
-2.0
-1.5
-1.0
IBIAS (PA)
V- = -0.5V
VS = V+ - V-
VCM = 0V
-40°C
25°C
125°C
2 3 4 5 6 7 8 9 10 11 12
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
VOS (mV)
VS (V)
V+ = +0.5V
VS = V+ - V-
VCM = 0V
-40°C
25°C
125°C
-40 -30 -20 -10 0 10 20 30 40
IOUT (mA)
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
VOS (mV)
V+ = +2.5V
V- = -2.5V
25°C
125°C
-40°C
-0.5 0.5 1.5 2.5 3.5 4.5 5.5
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
VOS (mV)
VCM (V)
V+ = +2.5V
V- = -2.5V
25°C
-40°C
125°C
2 3 4 5 6 7 8 9 10 11 12
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
VOS (mV)
VS (V)
V- = -0.5V
VS = V+ - V-
VCM = 0V
-40°C
25°C
125°C
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
www.ti.com
Typical Performance Characteristics (continued)
At TJ= 25°C, AV= +1 (RF= 0Ω), otherwise RF= 2 kΩfor AV≠+1, unless otherwise specified.
VOS VOS
vs. vs.
VCM VS(pnp)
VOS VOS
vs. vs.
VS(npn) IOUT
IB
vs.
VOS Distribution (pnp and npn) VS(pnp)
14 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated
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PRODUCTPREVIEW
02 4 68 10 12
V+ (V)
40
35
30
25
20
VOUT (mV)
-40°C
25°C
125°C
VOLTAGE VOUT IS
ABOVE V- SUPPLY
V- = 0V
RL = 150: to GND
0.001 0.01 0.1 1 100
FREQUENCY (MHz)
0.01
0.1
100
1000
OUTPUT IMPEDANCE (:)
10
1
10
V+ = +2.5V
V- = -2.5V
2 4 6 8 10 12
150
100
50
0
50
100
150
VOUT (mV)
VS (V)
VOLTAGE VOUT IS
BELOW V+ SUPPLY
VOLTAGE VOUT IS
ABOVE V- SUPPLY
125°C25°C
-40°C
RL = 1 k: to
MID-RAIL
2 4 6 8 10 12
600
400
200
0
200
400
600
VOUT (mV)
VS (V)
VOLTAGE VOUT IS
BELOW V+ SUPPLY
VOLTAGE VOUT IS
ABOVE V- SUPPLY
125°C
25°C
-40°C
RL = 150: to
MID-RAIL
02 4 6 810 12
VS (V)
0.5
1.0
1.5
IBIAS (PA)
125°C 25°C
-40°C
V+ = +0.5V
VS = V+ - V-
VCM = 0V
LMH6619Q
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Typical Performance Characteristics (continued)
At TJ= 25°C, AV= +1 (RF= 0Ω), otherwise RF= 2 kΩfor AV≠+1, unless otherwise specified.
IBIS
vs. vs.
VS(npn) VS
VOUT VOUT
vs. vs.
VSVS
VOUT Closed Loop Output Impedance
vs. vs.
VSFrequency AV= +1
Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 15
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PRODUCTPREVIEW
50 mV/DIV
25 ns/DIV
V+ = +5V
V- = -5V
A = +1
VOUT = 0.2V
RL = 1 k:
50 mV/DIV
25 ns/DIV
V+ = +2.5V
V- = -2.5V
A = -1
VOUT = 0.2V
RL = 1 k:
50 mV/DIV
25 ns/DIV
V+ = +2.5V
V- = -2.5V
A = +1
VOUT = 0.2V
RL = 1 k:
50 mV/DIV
25 ns/DIV
V+ = +1.5V
V- = -1.5V
A = +1
VOUT = 0.2V
RL = 1 k:
0.0001 0.001 0.01 0.1 1 10 100
FREQUENCY (MHz)
30
40
50
60
70
80
90
100
110
CMRR (dB)
V+ = +2.5V
V- = -2.5V
100k 1M 10M 100M
FREQUENCY (Hz)
60
70
80
90
100
CROSSTALK REJECTION (dB)
V+ = +2.5V
V- = -2.5V
VOUTCHA = 2 VPP
AVCHB = 2V/V
10 100 1k 10k 100k 1M 10M
FREQUENCY (Hz)
0
20
40
60
80
100
120
PSRR (dB)
100M
-PSRR
+PSRR
V+ = +2.5V
V- = -2.5V
10 100 1k 10k 100k 1M 10M
FREQUENCY (Hz)
0
20
40
60
80
100
120
PSRR (dB)
100M
-PSRR
+PSRR
V+ = +1.5V
V- = -1.5V
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
www.ti.com
Typical Performance Characteristics (continued)
At TJ= 25°C, AV= +1 (RF= 0Ω), otherwise RF= 2 kΩfor AV≠+1, unless otherwise specified.
PSRR PSRR
vs. vs.
Frequency Frequency
CMRR
vs.
Frequency Crosstalk Rejection vs. Frequency (Output to Output)
Small Signal Step Response Small Signal Step Response
Small Signal Step Response Small Signal Step Response
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PRODUCTPREVIEW
-6
-4
-2
0
2
4
6
2V/DIV
100 ns/DIV
VIN
VOUT
V+ = +5V
V- = -5V
A = +5
500 mV/DIV
50 ns/DIV
V+ = +2.5V
V- = -2.5V
A = +2
VOUT = 2V
RL = 150:
50 mV/DIV
25 ns/DIV
V+ = +5V
V- = -5V
A = +2
VOUT = 0.2V
RL = 150:
500 mV/DIV
50 ns/DIV
V+ = +2.5V
V- = -2.5V
A = +1
VOUT = 2V
RL = 1 k:
50 mV/DIV
25 ns/DIV
V+ = +2.5V
V- = -2.5V
A = +2
VOUT = 0.2V
RL = 150:
50 mV/DIV
25 ns/DIV
V+ = +1.5V
V- = -1.5V
A = +2
VOUT = 0.2V
RL = 150:
50 mV/DIV
25 ns/DIV
V+ = +1.5V
V- = -1.5V
A = -1
VOUT = 0.2V
RL = 1 k:
50 mV/DIV
25 ns/DIV
V+ = +5V
V- = -5V
A = -1
VOUT = 0.2V
RL = 1 k:
LMH6619Q
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Typical Performance Characteristics (continued)
At TJ= 25°C, AV= +1 (RF= 0Ω), otherwise RF= 2 kΩfor AV≠+1, unless otherwise specified.
Small Signal Step Response Small Signal Step Response
Small Signal Step Response Small Signal Step Response
Small Signal Step Response Large Signal Step Response
Large Signal Step Response Overload Recovery Waveform
Application Information
The LMH6619Q is based on National Semiconductor’s proprietary VIP10 dielectrically isolated bipolar process.
This device family architecture features the following:
• Complimentary bipolar devices with exceptionally high ft(∼8 GHz) even under low supply voltage (2.7V) and
Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 17
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PRODUCTPREVIEW
ADC121S625
0.1 PF10 PF
V+
33:
V+
560:220 pF
560:
-
+
0.1 PF10 PF
V+
V+
560:
560:33:
560:
220 pF
560:
INPUT 10 PF
-
+
LMH6619
LMH6619
2 Ps/DIV
-4
-3
-2
-1
0
1
2
3
4
1 V/DIV
V
-
V+VIN
VOUT
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
www.ti.com
low bias current.
• Common emitter push-push output stage. This architecture allows the output to reach within millivolts of either
supply rail.
• Consistent performance from any supply voltage (2.7V - 11V) with little variation with supply voltage for the most
important specifications (e.g. BW, SR, IOUT.)
• Significant power saving compared to competitive devices on the market with similar performance.
With 3V supplies and a common mode input voltage range that extends beyond either supply rail, the
LMH6619Q is well suited to many low voltage/low power applications. Even with 3V supplies, the −3 dB BW (at
AV= +1) is typically 120 MHz.
The LMH6619Q is designed to avoid output phase reversal. With input over-drive, the output is kept near the
supply rail (or as close to it as mandated by the closed loop gain setting and the input voltage). Figure 3 shows
the input and output voltage when the input voltage significantly exceeds the supply voltages.
Figure 3. Input and Output Shown with CMVR Exceeded
SINGLE TO DIFFERENTIAL ADC DRIVER
Figure 4 shows the LMH6619Q used to drive a differential ADC with a single-ended input. The ADC121S625 is a
fully differential 12-bit ADC. Table 1 shows the performance data of the LMH6619Q and the ADC121S625.
Figure 4. LMH6619Q Driving an ADC121S625
Table 1. Performance Data for the Single to Differential ADC Driver
Parameter Measured Value
Signal Frequency 10 kHz
Signal Amplitude 2.5V
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LMH6619
0.1 PF10 PF
0.1 PF
V+
1.24 k:
1 nF
150 pF
549:
V+
-
+
22:
390 pF
14.3 k:
5.6 PF
14.3 k:
1 PF 549:
ADC121S705
0.1 PF10 PF
V+
LMH6619
0.1 PF10 PF
0.1 PF
V+
1.24 k:
1 nF
150 pF
549:
V+
-
+
14.3 k:
5.6 PF
14.3 k:
1 PF 549:22:
390 pF
+IN
-IN
LMH6619Q
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Table 1. Performance Data for the Single to Differential ADC Driver (continued)
Parameter Measured Value
SINAD 67.9 dB
SNR 68.29 dB
THD −78.6 dB
SFDR 75.0 dB
ENOB 11.0 bits
DIFFERENTIAL ADC DRIVER
Its low noise and wide bandwidth make the LMH6619Q an excellent choice for driving a 12-bit ADC. Figure 5
shows the LMH6619Q driving an ADC121S705. The ADC121S705 is a fully differential 12-bit ADC.The
LMH6619Q is set up in a 2nd order multiple-feedback configuration with a gain of −1. The −3 dB point is at 500
kHz and the −0.01 dB point is at 100 kHz. The 22Ωresistor and 390 pF capacitor form an antialiasing filter for
the ADC121S705. The capacitor also stores and delivers charge to the switched capacitor input of the ADC. The
capacitive load on the LMH6619Q created by the 390 pF capacitor is decreased by the 22Ωresistor. Table 2
shows the performance data.
Figure 5. LMH6619Q Driving an ADC121S705
Table 2. Performance Data for the Differential ADC Driver
Parameter Measured Value
Signal Frequency 100 kHz
SINAD 71.5 dB
SNR 71.87 dB
THD −82.4 dB
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PRODUCTPREVIEW
+
-
VIN
R1
RGRF
VOUT
R2
V+V+
LMH6619Q
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
www.ti.com
Table 2. Performance Data for the Differential ADC Driver (continued)
Parameter Measured Value
SFDR 90.97 dB
ENOB 11.6 bits
DC LEVEL SHIFTING
Often a signal must be both amplified and level shifted while using a single supply for the op amp. The circuit in
Figure 6 can do both of these tasks. The procedure for specifying the resistor values is as follows.
1. Determine the input voltage.
2. Calculate the input voltage midpoint, VINMID = VINMIN + (VINMAX – VINMIN)/2.
3. Determine the output voltage needed.
4. Calculate the output voltage midpoint, VOUTMID = VOUTMIN + (VOUTMAX – VOUTMIN)/2.
5. Calculate the gain needed, gain = (VOUTMAX – VOUTMIN)/(VINMAX – VINMIN)
6. Calculate the amount the voltage needs to be shifted from input to output, ΔVOUT = VOUTMID – gain x VINMID.
7. Set the supply voltage to be used.
8. Calculate the noise gain, noise gain = gain + ΔVOUT/VS.
9. Set RF.
10. Calculate R1, R1= RF/gain.
11. Calculate R2, R2= RF/(noise gain-gain).
12. Calculate RG, RG= RF/(noise gain – 1).
Check that both the VIN and VOUT are within the voltage ranges of the LMH6619Q.
The following example is for a VIN of 0V to 1V with a VOUT of 2V to 4V.
1. VIN = 0V to 1V
2. VINMID = 0V + (1V – 0V)/2 = 0.5V
3. VOUT = 2V to 4V
4. VOUTMID = 2V + (4V – 2V)/2 = 3V
5. Gain = (4V – 2V)/(1V – 0V) = 2
6. ΔVOUT = 3V – 2 x 0.5V = 2
7. For the example the supply voltage will be +5V.
8. Noise gain = 2 + 2/5V = 2.4
9. RF=2kΩ
10. R1=2kΩ/2=1kΩ
11. R2=2kΩ/(2.4-2) = 5 kΩ
12. RG=2kΩ/(2.4 – 1) = 1.43 kΩ
Figure 6. DC Level Shifting
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PRODUCTPREVIEW
+
-
1 k:
51:
51:
0.1:
0A to 1A
1 k:
+5V
LMH6619Q
0.1 PF1 PF
0.1 PF1 PF
820 pF
1.02 k:
62 pF
1.02 k:
V+
-
+
V-
510:
OUTPUT
0.1 PF1 PF
0.1 PF1 PF
330 pF
1.05 k:
150 pF
V+
-
+
523:
V
-
INPUT
1.05 k:
LMH6619 LMH6619
LMH6619Q
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
4th ORDER MULTIPLE FEEDBACK LOW-PASS FILTER
Figure 7 shows the LMH6619Q used as the amplifier in a multiple feedback low pass filter. This filter is set up to
have a gain of +1 and a −3 dB point of 1 MHz. Values can be determined by using the WEBENCH®Active Filter
Designer found at amplifiers.national.com.
Figure 7. 4th Order Multiple Feedback Low-Pass Filter
CURRENT SENSE AMPLIFIER
With it’s rail-to-rail input and output capability, low VOS, and low IBthe LMH6619Q is an ideal choice for a current
sense amplifier application. Figure 8 shows the schematic of the LMH6619Q set up in a low-side sense
configuration which provides a conversion gain of 2V/A. Voltage error due to VOS can be calculated to be VOS x
(1 + RF/RG) or 0.6 mV x 21 = 12.6 mV. Voltage error due to IOis IOx RFor 0.26 µA x 1 kΩ= 0.26 mV. Hence
total voltage error is 12.6 mV + 0.26 mV or 12.86 mV which translates into a current error of 12.86 mV/(2 V/A) =
6.43 mA.
Figure 8. Current Sense Amplifier
TRANSIMPEDANCE AMPLIFIER
By definition, a photodiode produces either a current or voltage output from exposure to a light source. A
Transimpedance Amplifier (TIA) is utilized to convert this low-level current to a usable voltage signal. The TIA
often will need to be compensated to insure proper operation.
Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 21
Product Folder Links: LMH6619Q
PRODUCTPREVIEW
2SRFCT
f-3 dB GBWP
=
CF = CT
2SRF(GBWP)
NOISE GAIN (NG)
OP AMP OPEN
LOOP GAIN
I-V GAIN (:)
GAIN (dB)
0 dB
FREQUENCY
1 + sRF (CT + CF)
1 + sRFCF
1 + CIN
CF
GBWP
fz #
1
2SRFCTfP = 1
2SRFCF
2SRFCT
Where, fZ1
#and fP = 2SRFCF
1
NG = 1 + sRF (CT + CF)
1 + sCFRF
+
-
CPD CIN
RF
CF
VS
LMH6619Q
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
www.ti.com
Figure 9. Photodiode Modeled with Capacitance Elements
Figure 9 shows the LMH6619Q modeled with photodiode and the internal op amp capacitances. The LMH6619Q
allows circuit operation of a low intensity light due to its low input bias current by using larger values of gain (RF).
The total capacitance (CT) on the inverting terminal of the op amp includes the photodiode capacitance (CPD) and
the input capacitance of the op amp (CIN). This total capacitance (CT) plays an important role in the stability of
the circuit. The noise gain of this circuit determines the stability and is defined by:
(1)
(2)
Figure 10. Bode Plot of Noise Gain Intersecting with Op Amp Open-Loop Gain
Figure 10 shows the bode plot of the noise gain intersecting the op amp open loop gain. With larger values of
gain, CTand RFcreate a zero in the transfer function. At higher frequencies the circuit can become unstable due
to excess phase shift around the loop.
A pole at fPin the noise gain function is created by placing a feedback capacitor (CF) across RF. The noise gain
slope is flattened by choosing an appropriate value of CFfor optimum performance.
Theoretical expressions for calculating the optimum value of CFand the expected −3 dB bandwidth are:
(3)
(4)
Equation 4 indicates that the −3 dB bandwidth of the TIA is inversely proportional to the feedback resistor.
Therefore, if the bandwidth is important then the best approach would be to have a moderate transimpedance
gain stage followed by a broadband voltage gain stage.
22 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: LMH6619Q
PRODUCTPREVIEW
100k 1M 10M 100M 1G
FREQUENCY (Hz)
-18
-15
-12
-9
-6
-3
0
3
6
NORMALIZED I-V GAIN (dB)
CPD = 22 pF,
CF = 5.6 pF
CPD = 47 pF,
CF = 10 pF
CPD = 100 pF,
CF = 15 pF
CPD = 222 pF,
CF = 18 pF
LMH6619Q
www.ti.com
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Table 3 shows the measurement results of the LMH6619Q with different photodiodes having various
capacitances (CPD) and a feedback resistance (RF)of1kΩ.
Table 3. TIA (Figure 1) Compensation and Performance Results
CPD CTCF CAL CF USED f−3 dB CAL f−3 dB MEAS Peaking
(pF) (pF) (pF) (pF) (MHz) (MHz) (dB)
22 24 7.7 5.6 23.7 20 0.9
47 49 10.9 10 16.6 15.2 0.8
100 102 15.8 15 11.5 10.8 0.9
222 224 23.4 18 7.81 8 2.9
Figure 11 shows the frequency response for the various photodiodes in Table 3.
Figure 11. Frequency Response for Various Photodiode and Feedback Capacitors
When analyzing the noise at the output of the TIA, it is important to note that the various noise sources (i.e. op
amp noise voltage, feedback resistor thermal noise, input noise current, photodiode noise current) do not all
operate over the same frequency band. Therefore, when the noise at the output is calculated, this should be
taken into account. The op amp noise voltage will be gained up in the region between the noise gain’s zero and
pole (fZand fPin Figure 10). The higher the values of RFand CT, the sooner the noise gain peaking starts and
therefore its contribution to the total output noise will be larger. It is obvious to note that it is advantageous to
minimize CIN by proper choice of op amp or by applying a reverse bias across the diode at the expense of
excess dark current and noise.
DIFFERENTIAL CABLE DRIVER FOR NTSC VIDEO
The LMH6619Q can be used to drive an NTSC video signal on a twisted-pair cable. Figure 12 shows the
schematic of a differential cable driver for NTSC video. This circuit can be used to transmit the signal from a
camera over a twisted pair to a monitor or display located a distance. C1and C2are used to AC couple the video
signal into the LMH6619Q. The two amplifiers of the LMH6619Q are set to a gain of 2 to compensate for the 75Ω
back termination resistors on the outputs. The LMH6619Q is set to a gain of 1. Because of the DC bias the
output of the LMH6619Q is AC coupled. Most monitors and displays will accept AC coupled inputs.
Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 23
Product Folder Links: LMH6619Q
PRODUCTPREVIEW
-
+
-
+
C5
0.1 PFC6
10 PF
R4
10 k:
R5
10 k:
VIDEO
INPUT
J1
GND
C4
0.1 PF
GND
R2
3.3 k:
R6
10 k:
GND
GND
GND
C3
20 PF
R7
3.01 k:
GND
R1
75:C1
47 PF
C2
47 PF
GND
R12
150:
TWISTED-PAIR
C7
47 PFR13
3.01 k:
R14
3.01 k:
-
+
GND
C8
0.1 PFC9
10 PF
C10
47 PFJ2
GND
R16
3.01 k:
VIDEO
OUTPUT
R15
3.01 k:
1
5
2
4
3
V+
V
-
LMH6619Q
U2
GND GND
+10V
GND GND
R9
3.01 k:
V+
LMH6619Q
8
1
3
2
R3
1.50 k:
+10V
+10V
U1A
R10
75:
VOUT
R8
3 k:
R11
75:
4
V
-
7
5
6
VOUT
U1B
+10V
GND
LMH6619Q
+
+
+
+
+
+
+
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
www.ti.com
Figure 12. Differential Cable Driver
24 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: LMH6619Q
PACKAGE OPTION ADDENDUM
www.ti.com 11-Apr-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Top-Side Markings
(4)
Samples
LMH6619QMAK/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 105 LMH66
19QMA
LMH6619QMAKE/NOPB ACTIVE SOIC D 8 250 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 105 LMH66
19QMA
LMH6619QMAKX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 105 LMH66
19QMA
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 11-Apr-2013
Addendum-Page 2
OTHER QUALIFIED VERSIONS OF LMH6619-Q1 :
•Catalog: LMH6619
NOTE: Qualified Version Definitions:
•Catalog - TI's standard catalog product
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LMH6619QMAKE/NOPB SOIC D 8 250 178.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LMH6619QMAKX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 21-Mar-2013
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LMH6619QMAKE/NOPB SOIC D 8 250 210.0 185.0 35.0
LMH6619QMAKX/NOPB SOIC D 8 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 21-Mar-2013
Pack Materials-Page 2
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