TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 1 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Applications
High Power Switching
QFN 4x4mm 24L
Product Features
Functional Block Diagram
Frequency Range: DC 6 GHz
Power Handling: up to 40 W
Insertion Loss: < 1 dB
Isolation: -40 dB typical
Switching Speed: 50 ns
Control Voltages: 0 V/-40 V
Dimensions: 4.0 x 4.0 x 1.43 mm
General Description
Pin Configuration
The TriQuint TGS2351-SM is a Single-Pole, Double-
Throw (SPDT) Packaged Switch. The TGS2351-SM
operates from DC to 6 GHz and is designed using
TriQuint’s 0.25um GaN on SiC production process.
The TGS2351-SM typically provides up to 40 W input
power handling at control voltages of 0/-40 V. This
switch maintains low insertion loss < 1 dB, and high
isolation -40 dB typical.
The TGS2351-SM is ideally suited for High Power
Switching application.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pin #
1, 2, 5, 6, 7, 9, 12, 13, 18,
19, 22, 24, 25
GND
3 and 4
RF In
8
Vc2
10 and 11
RF Out2
14, 15, 16, 17
N/C
20 and 21
RF Out1
23
Vc1
Ordering Information
Part No.
ECCN
Description
TGS2351-SM
EAR99
DC 6 GHz High Power
SPDT Switch
3 & 4
10 & 11
20 & 21
8
23
Vc2
J1
RF In
Vc1
J2
RF Out1
J3
RF Out2
TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 2 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Specifications
Absolute Maximum Ratings
Parameter
Rating
Control Voltage, Vc
- 50 V
Control Current, Ic
-1 to 7.8 mA
Power Dissipation, Pdiss
10 W
RF Input Power, CW, 50Ω,T = 25ºC
47 dBm
RF Input Power, Hot Switching, 50%
switching Duty Cycle
40 dBm
Channel Temperature, Tch
275 oC
Mounting Temperature
(30 Seconds)
260 oC
Storage Temperature
-55 to 150 oC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Recommended Operating Conditions
Parameter
Min
Typical
Max
Units
Vc1
-40 / 0
V
Vc2
0 / -40
V
Ic1 / Ic2
-0.4 to 0.1
mA
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vc1 = -40/0 V, Vc2 = 0/-40 V,see Function Table at Application Circuit on page 7
Parameter
Min
Typical
Max
Units
Operational Frequency Range
DC
6
GHz
Control Current (Ic1/ Ic2)
-1
0.1
mA
Insertion Loss (On-State): DC to 5 GHz
0.5
1
dB
Insertion Loss (On-State): 6 GHz
0.8
1.2
Input Return Loss On-State (Common Port RL)
12
20
dB
Output Return Loss On-State (Switched Port RL)
12
20
dB
Isolation (Off-State)
-40
-31
dB
Output Return Loss Off-Sate (Isolated Port RL)
2.5
dB
Input Power 1/
46
dBm
Output Power @ Pin = 46dBm, 1-6GHz
45
dBm
Insertion Loss Temperature Coefficient
-0.003
dB/°C
Output TOI @ Pin = 23 dBm
50
dBm
Switching Speed On 2/
50
ns
Switching Speed Off 2/
50
ns
1/ The Input Power will be reduced if < 10 MHz.
2/ These Switching Speed dependent on Switch Driver circuit to deliver Vc = 0/-40 V. The rise and fall time of the Switch Driver which
was used to perform for this data is 35 ns, as shown on page 6. For further technical information, see GaN SPDT Switch Drivers
Application Note
TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 3 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Specifications (cont.)
Thermal and Reliability Information
Parameter
Condition
Rating
Thermal Resistance, θJC, measured to back of package
Tbase = 85 °C
θJC = 6.1 °C/W
Channel Temperature (Tch), and Median Lifetime (Tm)
Tbase = 85 °C, Vc1 = 0 V, Vc2 = -40
V, Pin = 40 W, Pdiss = 5.3 W
Tch = 118 °C
Tm = 1.4 E+9 Hours
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
1.E+14
1.E+15
25 50 75 100 125 150 175 200 225 250 275
Median Lifetime, Tm (Hours)
Channel Temperature, Tch C)
Median Lifetime (Tm) vs. Channel Temperature (Tch)
FET7
TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 4 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0 1 2 3 4 5 6 7 8 9 10
Insertion Loss (dB)
Frequency (GHz)
Insertion Loss (On-State) vs. Frequency
Vc1 = -40 V, Vc2 = 0 V, +25 0C
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
012345678910
Isolation (dB)
Frequency (GHz)
Isolation (Off-State) vs. Frequency
Vc1 = 0 V, Vc2 = -40 V, +25 0C
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678910
Off-State Return Loss (dBm)
Frequency (GHz)
Return Loss (Off-State) vs. Frequency
Vc1 = 0 V, Vc2 = -40 V, +25 0C
IRL
ORL
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678910
On-State Return Loss (dB)
Frequency (GHz)
Return Loss (On-State) vs. Frequency
Vc1 = -40 V, Vc2 = 0 V, +25 0C
IRL
ORL
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
34 36 38 40 42 44 46
Loss Compression (dB)
Input Power (dBm)
Loss Compression vs. Pin vs. Frequency
Vc1 = -40 V, Vc2 = 0 V, +25 0C
1 GHz
2 GHz
3 GHz
4 GHz
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
34 36 38 40 42 44 46
Loss Compression (dB)
Input Power (dBm)
Loss Compression vs. Pin vs. Frequency
Vc1 = -40 V, Vc2 = 0 V, +25 0C
100 MHz
300 MHz
500 MHz
700 MHz
900 MHz
TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 5 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance (cont.)
0.00
0.01
0.02
0.03
0.04
0.05
34 36 38 40 42 44 46
Control Current, Ic (mA)
Input Power (dBm)
Control Current vs. Pin
Vc1 = -40 V, Vc2 = 0 V, Frequency = 3 GHz, +25 0C
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0 1 2 3 4 5 6 7 8 9 10
Insertion Loss (dB)
Frequency (GHz)
Insertion Loss (On-State) vs. Freq vs. Vc
Vc2 = 0 V, +25 0C
Vc1 = -40 V
Vc1 = -30 V
Vc1 = -20 V
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
12345678910
Isolation (dB)
Frequency (GHz)
Isolation (Off-State) vs. Freq vs. Vc
Vc1 = 0 V, +25 0C
Vc2 = -40 V
Vc2 = -30 V
Vc2 = -20 V
-5
-4
-3
-2
-1
0
1
34 36 38 40 42 44 46
Loss Compression (dB)
Input Power (dBm)
Loss Compression vs. Pin vs. Vc
Vc2 = 0 V, Frequency = 3 GHz, +25 0C
Vc1 = -40 V
Vc1 = -30 V
Vc1 = -20 V
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0 1 2 3 4 5 6 7 8 9 10
Insertion Loss (dB)
Frequency (GHz)
Insertion (On-State) vs. Freq vs. Temp
Vc1 = -40 V, Vc2 = 0 V
-55 C
+25 C
+85 C
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
12345678910
Isolation (dB)
Frequency (GHz)
Isolation (Off-State) vs. Freq vs. Temp
Vc1 = 0 V, Vc2 = -40 V
-55 C
+25 C
+85 C
TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 6 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance (cont.)
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
34 36 38 40 42 44 46
Loss Compression (dB)
Input Power (dBm)
Loss Compression vs. Pin vs. Temp
Vc1 = -40 V, Vc2 = 0 V, Frequency = 3 GHz
-55 C
+25 V
+85 C
Switching Speed On 50 ns
Vc = 0/-40 V, Freq = 3 GHz, Pin = 30 dBm, +25 0C
Switching Speed - Off 50 ns
Vc = 0/-40 V, Freq = 3 GHz, Pin = 30 dBm, +25 0C
30
35
40
45
50
55
60
65
70
1 2 3 4 5 6 7 8
TOI (dBm)
Frequency (GHz)
TOI vs. Frequency
Vc1 = 0 V, Vc2 = -40 V, Pin = 23dBm, f = 10 MHz, +25 0C
TOI measurements above 60 dBm
are limited by the test set
TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 7 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Application Circuit
This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one unused
RF Out port with a 50 Ohm load.
Bias-up Procedure
Bias-down Procedure
Vc1 or Vc2 set to -40 V (see Function Table below for RF Path)
Turn off RF supply
Vc2 or Vc1 set to 0 V (see Function Table below for RF Path)
Turn Vc1 or Vc2 to 0V
Apply RF signal to RF Input
Turn Vc2 or Vc1 to 0 V
Function Table
RF Path
State
Vc1
Vc2
RF In to RF Out1 (50 Ohm load to RF Out2)
On-State (Insertion Loss)
0 V
-40 V
Off-State (Isolation)
-40 V
0 V
RF In to RF Out2 (50 Ohm load to RF Out1)
On-State (Insertion Loss)
-40 V
0 V
Off-State (Isolation)
0 V
-40 V
J2
RF Out1
Vc1
-40 V / 0 V
TGS2351-SM
1
2
3
4
5
6
J1
RF In
18
17
16
15
14
13
Vc2
0 V / -40 V J3
RF Out2
78910 11 12
24 23 22 21 20 19
TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 8 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Pin Description
Pin
Symbol
Description
1, 2, 5, 6, 7, 9, 12, 13,
18, 19, 22, and 24
GND
No internal connection; must be grounded on PCB
3 and 4
RF In
Input, matched to 50 ohms, DC coupled
9, 22
GND
Connected to GND paddle (pin 25) must be grounded on PCB to improve
isolation
8
Vc2
Control voltage #2; see Application Circuit on page 7 as an example
10 and 11
RF Out2
Output #2, matched to 50 ohms, DC coupled
14, 15, 16, and 17
N/C
No internal connection; can be grounded or left open
20 and 21
RF Out1
Output #1, matched to 50 ohms, DC coupled
23
Vc1
Control voltage #1; see Application Circuit on page 7 as an example
25
GND
Backside Paddle. Multiple vias should be employed to minimize inductance
and thermal resistance; see Mounting Configuration on page 11 for suggested
footprint.
, GND
1
2
3
4
5
6
25
, GND
, RF In
, RF In
, GND
, GND
, GND
18
17
16
15
14
13
, N/C
, N/C
, N/C
, N/C
, GND
, GND
7
8
9
10
11
12
, Vc2
, GND
, RF Out2
, RF Out2
, GND
, GND
24
23
22
21
20
19
, Vc1
, GND
, RF Out1
, RF Out1
, GND
PIN #1
IDENTIFICATION
TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 9 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Applications Information
PC Board Layout
Top RF layer is 0.010thick Rogers 4350, єr = 3.66. Metal layers are 0.5-oz copper. Microstrip 50 Ω line detail: width =
0.0217”.
The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land
pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company
to company, careful process development is recommended.
For further technical information, refer to the TGS2351-SM Product Information page.
RF In
RF Out1
RF Out2
TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 10 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Mechanical Information
Package Information and Dimensions
All dimensions are in millimeters.
This package is lead-free/RoHS-compliant with a Aluminum Nitride base (AlN), and the plating material on the leads is
Electroless Gold (Au) over Electroless nickel (Ni). It is compatible with both lead-free (maximum 260 °C reflow temperature)
and tin-lead (maximum 245 °C reflow temperature) soldering processes.
The TGS2351-SM will be marked with the “2351” designator and a lot code marked below the part designator. The YY”
represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “MXXX” is a
supplier code and partial batch ID.
2351
YYWW
MXXX
TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 11 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Mechanical Information (cont.)
Mounting Configuration
All dimensions are in millimeters (inches).
Notes:
1. A heatsink underneath the area of the PCB for the mounted device
is recommended for proper thermal operation.
2. Ground / thermal vias are critical for the proper performance of this
device.
Vias have a final plated thru diameter of .203 mm (.008”).
.406
.406
TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 12 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Product Compliance Information
ESD Information
ESD Rating: Class 1B
Value: Passes 500 V min.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
MSL Rating
Level 1 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level TBD at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce EAR99
Recommended Soldering Temperature Profile
TGS2351-SM
DC 6 GHz High Power SPDT Switch
Data Sheet: Rev A 06/20/12
- 13 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com Tel: +1.972.994.8465
Email: info-sales@tqs.com Fax: +1.972.994.8504
For technical questions and application information:
Email: info-products@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.