MCC162-12io1
3 1 2
6 57 4
Phase leg
Thyristor Module
Part number
MCC162-12io1
Backside: isolated
TAV
T
V V1.03
RRM
181
1200
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
Thyristor for line frequency
Planar passivated chip
Long-term stability
Direct Copper Bonded Al2O3-ceramic
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Y4
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
Isolation Voltage: V~
3600
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20191210cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCC162-12io1
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.09
R0.155 K/W
min.
181
VV
300T = 25°C
VJ
T = °C
VJ
mA10V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
645 WT = 25°C
C
150
1200
forward voltage drop
total power dissipation
Conditions
1.25
T = 25°C
VJ
125
V
T0
V0.88T = °C
VJ
125
r
T
1.15 m
V1.03T = °C
VJ
I = A
T
V
150
1.25
I = A300
I = A300
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1200T = 25°C
VJ
IA300
P
GM
Wt = 30 µs 120
max. gate power dissipation
P
T = °C
C
125
Wt = 60
P
P
GAV
W8
average gate power dissipation
C
J
273
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
6.00
6.48
130.1
126.3
kA
kA
kA
kA
5.10
5.51
180.0
174.7
1200
500 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
540 A
T
P
G
= 0.5
di /dt A/µs;
G
=0.5
DRM
cr
V = V
DRM
GK
1000
2.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
150 mA
T = °C-40
VJ
2.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = V
D DRM
125
latching current
T = °C
VJ
300 mA
I
L
25t µs
p
= 30
I A;
G
= 0.5 di /dt A/µs
G
= 0.5
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R =
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.5 di /dt A/µs
G
= 0.5
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 300 V = V
DRM
tµs
p
= 200
non-repet., I = 180 A
T
100
R
thCH
0.07
thermal resistance case to heatsink
K/W
Thyristor
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
IXYS reserves the right to change limits, conditions and dimensions. 20191210cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCC162-12io1
Ratings
Part Number
yywwAA
Date Code (DC)
+
Production
Index (PI) Lot.No: xxxxxx
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31),
blank (32), serial no.# (33-36)
Circuit
Package
T
op
°C
M
D
Nm2.75
mounting torque
2.25
T
VJ
°C125
virtual junction temperature
-40
Weight g150
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
M
T
Nm5.5
terminal torque
4.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
14.0 10.0
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
300 A
per terminal
100-40
terminal to terminal
Y4
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I 1 mA
ISOL
MCC162-12io1 429597Box 6MCC162-12io1Standard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.88
m
V
0 max
R
0 max
slope resistance *
0.8
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
°C
* on die level
125
IXYS reserves the right to change limits, conditions and dimensions. 20191210cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCC162-12io1
g
C-C (1:1)
e
n
d
r
j
B-B (1:1)
b
DCB
A (3:1)
c
aM6
p
f
2.8/ 0.8
A
o
Dim. MIN
[mm]
MAX
[mm]
MIN
[inch]
MAX
[inch]
a 30.0 30.6 1.181 1.205
b
c 64.0 65.0 2.520 2.559
d 6.5 7.0 0.256 0.275
e 4.9 5.1 0.193 0.201
f 28.6 29.2 1.126 1.150
g 7.3 7.7 0.287 0.303
h 93.5 94.5 3.681 3.720
i 79.5 80.5 3.130 3.169
j 4.8 5.2 0.189 0.205
k 33.4 34.0 1.315 1.339
l 16.7 17.3 0.657 0.681
m 22.7 23.3 0.894 0.917
n 22.7 23.3 0.894 0.917
o 14.0 15.0 0.551 0.591
p
q 22.8 23.3 0.898 0.917
r 1.8 2.4 0.071 0.041
typ. 0.25 typ. 0.010
typ. 10.5 typ. 0.413
k
h
1 2 3
4
56
7
n m l
1
1
1
0
8
9
q
i
C C
B
B
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
Type ZY 180R (R = Right for pin pair 6/7) UL 758, style 3751
3 1 2
6 57 4
Outlines Y4
IXYS reserves the right to change limits, conditions and dimensions. 20191210cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCC162-12io1
0 25 50 75 100 125 150
T
a
[°C]
T
C
[°C]
t [ms]t [s]
0.001 0.01 0.1 1
0
1000
2000
3000
4000
5
0
00
011
10
4
10
5
10
6
0 25 50 75 100 125 150
0
40
80
120
160
200
240
280
3
20
I
TSM
[A]
I
TAVM
[A]
0 50 100 150 200 250
0
40
80
120
160
200
240
280
320
360
400
P
tot
[W]
I
TAVM
[A]
0 25 50 75 100 125 1500 100 200 300 400 500
0
200
400
600
800
1000
1200
1400
I
2
dt
[A
2
s]
T
VJ
= 125°C
R
thKA
K/W
0.3
0.4
0.5
0.6
0.8
1.0
1.4
1.8
P
tot
[W]
I
dAVM
[A] T
a
[°C]
Fig. 1 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms) Fig. 3 Max. forward current
at case temperature
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
Fig. 5 Gate trigger characteristics
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
Fig. 7 Gate trigger delay time
180° sin
120°
60°
30°
DC
R
thKA
K/W
0.2
0.08
0.1
0.15
0.04
0.06
0.03
0.3
0.01 0.1 1 10
0.1
1
10
100
0.01 0.1 1 10
0.1
1
10
100
I
G
[A]
V
G
[V]
I
G
[A]
T
VJ
= 25°C
t
gd
[μs]
I
GT
(T
VJ
= -40°C)
I
GT
(T
VJ
= 0°C)
I
GT
(T
VJ
= 25°C)
125°C
25°C
limit
typ.
t
p
= 30 µs
t
p
= 500 µs
P
GM
= 120 W
60 W
P
GAV
= 8 W
I
GD
50 Hz
80% V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
T
VJ
= 45°C
180° sin
120°
60°
30°
DC
B6
Circuit
3xMCC162 or
3x MCD162
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20191210cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCC162-12io1
0 100 200 300 400
0
400
800
1200
1600
t [s]
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.0
0.1
0.2
0.3
Z
thJC
[K/W]
I
RMS
[A]
P
tot
[W]
0 25 50 75 100 125 150
T
a
[°C]
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.08
0.16
0.24
Z
thJK
[K/W]
t [s]
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
F
i
g.
10
Transie
n
t
therma
l
im
p
edance
j
un
c
ti
o
n
to
he
a
ts
i
n
k
(
p
e
r
thyristor/di
o
de
)
R
thJC
for various conduction angles d:
d R
thJC
[K/W]
DC 0.155
180° 0.167
120° 0.176
60° 0.197
30° 0.227
Constants for Z
thJC
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0072 0.001
2 0.0188 0.080
3 0.1290 0.200
R
thJK
for various conduction angles d:
d R
thJK
[K/W]
DC 0.225
180° 0.237
120° 0.246
60° 0.267
30° 0.297
Constants for Z
thJK
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0072 0.001
2 0.0188 0.080
3 0.1290 0.200
4 0.0700 1.000
0.15
0.1
0.08
R
thKA
K/W
0.2
0.03
0.04
0.06
0.3
Circuit
W3
3xMCC162 or
3xMCD162
DC
180°
120°
60°
30°
DC
180°
120°
60°
30°
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20191210cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved