VS-HFA320NJ40CPbF www.vishay.com Vishay Semiconductors HEXFRED(R) Ultra Fast Soft Recovery Diode, 320 A FEATURES Lug terminal anode 1 Lug terminal anode 2 * Very low Qrr and trr * UL approved file E222165 * Designed and qualified for industrial level * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Base common cathode TO-244 * Reduced RFI and EMI * Reduced snubbing DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 320 A VR 400 V IF(DC) at TC 255 A at 85 C Package TO-244 Circuit configuration Two diodes common cathode HEXFRED(R) diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dIF/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current SYMBOL TEST CONDITIONS MAX. UNITS 400 V VR IF TC = 25 C 420 TC = 85 C 255 TC = 115 C 160 1200 Single pulse forward current IFSM Limited by junction temperature Non-repetitive avalanche energy EAS L = 100 H, duty cycle limited by maximum TJ 1.4 TC = 25 C 625 TC = 100 C 250 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg A mJ W -55 to +150 C ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 A Maximum forward voltage VFM IF = 320 A IF = 160 A See fig. 1 IF = 160 A, TJ = 125 C MIN. TYP. MAX. 400 - - - 1.10 1.35 - 1.30 1.54 - 1.00 1.20 UNITS V Maximum reverse leakage current IRM TJ = 125 C, VR = 400 V See fig. 2 - 0.9 3 Junction capacitance CT VR = 200 V See fig. 3 - 370 500 pF Series inductance LS From top of terminal hole to mounting plane - 5.0 - nH mA Revision: 09-May-17 Document Number: 94072 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA320NJ40CPbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time See fig. 5 trr Peak recovery current See fig. 6 TYP. MAX. - 45 - - 90 140 TJ = 125 C - 290 440 - 8.7 20 - 18 30 - 420 1100 TJ = 125 C - 2600 7000 TJ = 25 C - 300 - TJ = 125 C - 280 - SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 55 - 150 C - - 0.19 - - 0.095 - 0.10 - - 68 - g oz. TJ = 25 C dI(rec)M/dt UNITS TJ = 25 C TJ = 125 C Qrr Peak rate of recovery current See fig. 8 MIN. TJ = 25 C IRRM Reverse recovery charge See fig. 7 TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/s, VR = 30 V IF = 160 A dIF/dt = 200 A/s VR = 200 V ns A nC A/s THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range per leg Thermal resistance, junction to case RthJC per module Typical thermal resistance, case to heatsink RthCS Weight - 2.4 - 30 (3.4) - 40 (4.6) 12 (1.4) - 18 (2.1) 30 (3.4) - 40 (4.6) Vertical pull - - 80 2" lever pull - - 35 Mounting torque (1) center hole Terminal torque C/W K/W lbf * in (N * m) lbf in 10 000 1000 TJ = 150 C IR - Reverse Current (A) IF - Instantaneous Forward Current (A) Note (1) Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface. Gradually tighten each mounting bolt in 5 to 10 lbf in steps until desired or maximum torque limits are reached. 100 TJ = 150 C TJ = 125 C TJ = 25 C 10 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1000 TJ = 125 C 100 10 TJ = 25 C 1 0.1 100 200 300 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) 400 Revision: 09-May-17 Document Number: 94072 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA320NJ40CPbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 80 TJ = 125 C TJ = 25 C 70 IRRM (A) 60 TJ = 25 C 1000 IF = 200 A IF = 160 A IF = 70 A 50 40 30 20 10 100 10 100 0 100 1000 1000 VR - Reverse Voltage (V) dIF/dt (A/s) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) 160 7000 140 6000 120 TJ = 125 C TJ = 25 C 5000 100 Qrr (nC) Maximum Allowable Case Temperature (C) 1 DC 80 60 IF = 200 A IF = 160 A IF = 70 A 4000 3000 2000 40 1000 20 0 0 100 200 300 0 100 500 400 1000 IF(AV) - DC Forward Current (A) dIF/dt (A/s) Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 10 000 400 IF = 200 A IF = 160 A IF = 70 A trr (ns) 300 250 200 150 dI(rec)M/dt (A/s) 350 TJ = 125 C TJ = 25 C 200 A 160 A 70 A 1000 100 TJ = 125 C TJ = 25 C 50 0 100 1000 100 100 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) Revision: 09-May-17 Document Number: 94072 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA320NJ40CPbF www.vishay.com Vishay Semiconductors ZthJC - Thermal Response 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.01 Single pulse (thermal response) 0.001 0.00001 0.0001 0.001 0.01 1 0.1 10 t1 - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) VR = 200 V 0.01 L = 70 H D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 09-May-17 Document Number: 94072 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA320NJ40CPbF www.vishay.com Vishay Semiconductors L = 100 H IL(PK) High-speed switch D.U.T. Freewheel diode Rg = 25 + Current monitor Decay time Vd = 50 V V(AVAL) VR(RATED) Fig. 12 - Avalanche Test Circuit and Waveforms ORDERING INFORMATION TABLE Device code HFA 320 VS1 2 NJ 40 C PbF 4 5 6 7 3 1 - Vishay Semiconductors product 2 - HEXFRED(R) family, electron irradiated 3 - Average current rating 4 - NJ = TO-244 5 - Voltage rating (400 V) 6 - C = common cathode 7 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 09-May-17 Document Number: 94072 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) O 5.2 (O 0.20) 3 12.6 (0.5) O 7.2 (O 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) 1/4" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-HFA320NJ40CPBF