VS-HFA320NJ40CPbF
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Revision: 09-May-17 1Document Number: 94072
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HEXFRED®
Ultra Fast Soft Recovery Diode, 320 A
FEATURES
• Very low Qrr and trr
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION / APPLICATIONS
HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dIF/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
PRIMARY CHARACTERISTICS
IF(AV) 320 A
VR400 V
IF(DC) at TC255 A at 85 °C
Package TO-244
Circuit configuration Two diodes common cathode
Base common
cathode
Lug
terminal
anode 1
Lug
terminal
anode 2
TO-244
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage VR400 V
Continuous forward current IF
TC = 25 °C 420
A
TC = 85 °C 255
TC = 115 °C 160
Single pulse forward current IFSM Limited by junction temperature 1200
Non-repetitive avalanche energy EAS L = 100 μH, duty cycle limited by maximum TJ1.4 mJ
Maximum power dissipation PD
TC = 25 °C 625 W
TC = 100 °C 250
Operating junction and storage
temperature range TJ, TStg -55 to +150 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage VBR IR = 100 μA 400 - -
V
Maximum forward voltage VFM
IF = 160 A
See fig. 1
- 1.10 1.35
IF = 320 A - 1.30 1.54
IF = 160 A, TJ = 125 °C - 1.00 1.20
Maximum reverse
leakage current IRM TJ = 125 °C, VR = 400 V See fig. 2 - 0.9 3 mA
Junction capacitance CTVR = 200 V See fig. 3 - 370 500 pF
Series inductance LSFrom top of terminal hole to mounting plane - 5.0 - nH
VS-HFA320NJ40CPbF
www.vishay.com Vishay Semiconductors
Revision: 09-May-17 2Document Number: 94072
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Note
(1) Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 to 10 lbf in steps until desired or maximum torque limits are reached.
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5 trr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 45 -
nsTJ = 25 °C
IF = 160 A
dIF/dt = 200 A/μs
VR = 200 V
-90140
TJ = 125 °C - 290 440
Peak recovery current
See fig. 6 IRRM
TJ = 25 °C - 8.7 20 A
TJ = 125 °C - 18 30
Reverse recovery charge
See fig. 7 Qrr
TJ = 25 °C - 420 1100 nC
TJ = 125 °C - 2600 7000
Peak rate of recovery current
See fig. 8 dI(rec)M/dt TJ = 25 °C - 300 - A/μs
TJ = 125 °C - 280 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range TJ, TStg - 55 - 150 °C
Thermal resistance, junction to case per leg RthJC - - 0.19
°C/W
K/W
per module - - 0.095
Typical thermal resistance, case to heatsink RthCS -0.10-
Weight -68- g
-2.4-oz.
Mounting torque (1) 30 (3.4) - 40 (4.6)
lbf · in
(N · m)
center hole 12 (1.4) - 18 (2.1)
Terminal torque 30 (3.4) - 40 (4.6)
Vertical pull --80
lbf in
2" lever pull --35
1
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.2 1.80.8
VFM - Forward Voltage Drop (V)
IF - Instantaneous Forward Current (A)
100
0.4 1.4
1000
0.6 1.0 1.61.2
100
1
10
100
VR - Reverse Voltage (V)
IR - Reverse Current (µA)
200 400
1000
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10 000
300
0.1
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Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 4 - Maximum Allowable Case Temperature vs.
DC Forward Current (Per Leg)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)
Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg)
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
1000
10 000
1 10 100 1000
100
VR - Reverse Voltage (V)
CT - Junction Capacitance (pF)
TJ = 25 °C
80
160
0 100 300 500
0
IF(AV) - DC Forward Current (A)
Maximum Allowable
Case Temperature (°C)
DC
140
120
100
60
40
20
200 400
250
0
100 1000
dIF/dt (A/µs)
trr (ns)
50
TJ = 125 °C
TJ = 25 °C
150
100
IF = 200 A
IF = 160 A
IF = 70 A
200
300
350
400
70
60
0
100 1000
dIF/dt (A/µs)
IRRM (A)
40
IF = 200 A
IF = 160 A
IF = 70 A
TJ = 125 °C
TJ = 25 °C
20
50
30
10
80
4000
100 1000
dIF/dt (A/µs)
Qrr (nC)
TJ = 125 °C
TJ = 25 °C
2000
1000
3000
0
5000 IF = 200 A
IF = 160 A
IF = 70 A
6000
7000
1000
100
100 1000
dIF/dt (A/µs)
dI(rec)M/dt (A/µs)
10 000
TJ = 125 °C
TJ = 25 °C
200 A
160 A
70 A
VS-HFA320NJ40CPbF
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Revision: 09-May-17 4Document Number: 94072
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Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Fig. 10 - Reverse Recovery Parameter Test Circuit
Fig. 11 - Reverse Recovery Waveform and Definitions
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal response)
0.001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
10
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-HFA320NJ40CPbF
www.vishay.com Vishay Semiconductors
Revision: 09-May-17 5Document Number: 94072
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Fig. 12 - Avalanche Test Circuit and Waveforms
ORDERING INFORMATION TABLE
V(AVAL)
VR(RATED)
IL(PK)
Decay
time
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode
Vd = 50 V
L = 100 µH
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95021
- HEXFRED® family, electron irradiated
- Average current rating
- NJ = TO-244
- Voltage rating (400 V)
- C = common cathode
- Lead (Pb)-free
Device code HFA 320 NJ 40 C PbF
1
2
3
4
5
6
7
621 43 5 7
VS-
- Vishay Semiconductors product
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 24-Apr-15 1Document Number: 95021
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TO-244
DIMENSIONS in millimeters (inches)
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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