BFR93A/BFR93AR Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 1 13 581 13 581 94 9280 2 9510527 3 BFR93A Marking: + R2 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter 3 2 BFR93AR Marking: + R5 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb 60C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 50 200 150 -65 to +150 Unit V V V mA mW C C Symbol Value Unit RthJA 450 K/W Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev. A3, 31-Oct-97 1 (7) BFR93A/BFR93AR Electrical DC Characteristics Tamb = 25_C Parameters / Test Conditions Collector-emitter cut-off current VCE = 20 V, VBE = 0 Collector-base cut-off current VCB = 10 V, IE = 0 Emitter-base cut-off current VEB = 2 V, IC = 0 Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA DC forward current transfer ratio VCE = 5 V, IC = 30 mA Symbol Max. Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V(BR)CEO Min. Typ. 12 VCEsat V 100 400 hFE 40 90 150 Symbol Min. Typ. Max. mV Electrical AC Characteristics Tamb = 25_C Parameters / Test Conditions Transition frequency VCE = 5 V, IC = 30 mA, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 8 V, ZS = 50 W, f = 800 MHz, IC = 5 mA IC = 25 mA Power gain VCE = 8 V, ZS = 50 W, ZL = ZLopt, IC = 25 mA, f = 800 MHz Linear output voltage - two tone intermodulation test VCE = 8 V, IC = 25 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 W Third order intercept point VCE = 8 V, IC = 25 mA, f = 800 MHz 2 (7) Unit fT 6 GHz Ccb 0.45 pF Cce 0.2 pF Ceb 1.5 pF F F 1.6 2.1 dB dB Gpe 14 dB V1 = V2 260 mV IP3 31 dBm TELEFUNKEN Semiconductors Rev. A3, 31-Oct-97 BFR93A/BFR93AR Common Emitter S-Parameters Z0 = 50 W S11 VCE/V IC/mA f/MHz 5 10 8 15 20 25 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 LIN MAG 0.811 0.530 0.370 0.274 0.256 0.255 0.277 0.294 0.312 0.676 0.377 0.259 0.197 0.189 0.195 0.222 0.245 0.263 0.597 0.306 0.219 0.172 0.165 0.174 0.201 0.226 0.245 0.540 0.274 0.199 0.164 0.160 0.166 0.197 0.223 0.242 0.502 0.254 0.191 0.162 0.158 0.163 0.200 0.220 0.243 TELEFUNKEN Semiconductors Rev. A3, 31-Oct-97 S21 ANG deg -33.9 -83.4 -116.3 -149.7 -165.5 -178.6 162.7 146.0 136.2 -44.9 -97.1 -131.0 -164.2 -178.0 169.8 155.6 140.0 131.3 -52.0 -105.2 -139.3 -172.8 174.6 164.9 152.9 137.5 128.5 -56.8 -110.3 -144.7 -177.3 171.1 162.3 151.6 135.8 128.2 -61.1 -114.6 -148.9 178.0 167.6 159.3 149.0 134.7 128.4 LIN MAG 12.66 8.32 5.67 3.77 3.11 2.67 2.21 1.91 1.76 19.22 10.24 6.59 4.26 3.48 2.98 2.46 2.12 1.95 22.81 10.94 6.91 4.45 3.62 3.09 2.54 2.19 2.01 24.86 11.22 7.03 4.49 3.66 3.13 2.58 2.21 2.04 26.06 11.32 7.05 4.51 3.66 3.13 2.57 2.21 2.04 S12 ANG deg 152.2 117.3 99.8 85.0 77.8 71.1 62.1 54.0 49.4 142.3 108.0 93.8 81.6 75.4 69.5 61.4 54.1 49.9 136.3 103.8 91.3 80.0 74.3 68.8 61.0 53.9 49.7 132.3 101.5 89.8 79.2 73.5 68.2 60.5 53.7 49.5 129.3 99.8 88.8 78.5 73.0 67.6 60.1 53.2 48.9 LIN MAG 0.028 0.058 0.075 0.099 0.117 0.135 0.163 0.194 0.215 0.025 0.050 0.071 0.102 0.124 0.147 0.179 0.212 0.235 0.023 0.047 0.070 0.104 0.128 0.151 0.185 0.219 0.243 0.022 0.046 0.070 0.105 0.130 0.153 0.188 0.222 0.246 0.021 0.045 0.070 0.106 0.131 0.154 0.190 0.224 0.248 S22 ANG deg 72.8 57.8 56.7 59.8 61.8 62.6 63.3 63.3 62.7 69.9 62.8 64.8 66.9 67.2 66.7 65.4 63.6 62.0 69.3 66.5 68.4 69.5 69.0 68.1 66.0 63.8 61.8 68.6 68.6 70.5 70.9 70.1 68.6 66.2 63.8 61.8 68.7 69.6 71.5 71.5 70.5 69.0 66.4 63.8 61.7 LIN MAG 0.914 0.661 0.537 0.487 0.485 0.481 0.466 0.455 0.454 0.832 0.539 0.441 0.415 0.423 0.424 0.409 0.398 0.397 0.774 0.484 0.405 0.390 0.401 0.403 0.388 0.377 0.375 0.732 0.455 0.387 0.380 0.391 0.393 0.378 0.367 0.365 0.702 0.438 0.378 0.374 0.387 0.389 0.374 0.364 0.361 ANG deg -15.0 -27.4 -26.9 -23.8 -24.2 -26.8 -31.3 -35.0 -38.4 -21.0 -29.0 -25.0 -20.4 -21.1 -24.2 -29.0 -32.6 -36.2 -23.9 -28.5 -23.3 -18.3 -19.4 -22.7 -27.8 -31.4 -35.3 -25.5 -27.6 -21.9 -16.9 -18.2 -21.8 -27.1 -30.9 -34.7 -26.4 -26.5 -20.6 -16.0 -17.5 -21.2 -26.6 -30.5 -34.4 3 (7) BFR93A/BFR93AR Typical Characteristics (Tj = 25_C unless otherwise specified) C cb - Collector Base Capacitance ( pF ) P tot - Total Power Dissipation ( mW ) 250 200 150 100 50 0 0 30 60 90 120 0.4 0.2 f=1MHz 0 0 7000 3.5 6000 3.0 5000 4000 3000 2000 VCE=5V f=500MHz 1000 8 12 16 20 2.5 2.0 1.5 1.0 VCE=8V f=800MHz ZS=50W 0.5 0 0 0 13590 4 VCB - Collector Base Voltage ( V ) Figure 3.. Collector Base Capacitance vs. Collector Base Voltage F - Noise Figure ( dB ) f T - Transition Frequency ( MHz ) 0.6 13591 Figure 1.. Total Power Dissipation vs. Ambient Temperature 8 16 24 32 40 IC - Collector Current ( mA ) Figure 2.. Transition Frequency vs. Collector Current 4 (7) 0.8 150 Tamb - Ambient Temperature ( C ) 96 12159 1.0 0 12897 5 10 15 20 25 30 IC - Collector Current ( mA ) Figure 4.. Noise Figure vs. Collector Current TELEFUNKEN Semiconductors Rev. A3, 31-Oct-97 BFR93A/BFR93AR VCE = 8 V; IC = 25 mA; Z0 = 50 W S12 S11 j 2.0 GHz 90 120 j0.5 1.5 j2 60 1.0 150 j0.2 30 j5 AAA AAAAAA AAA AAAAAA 0.5 2.0 GHz 0 1.0 0.2 1 2 1 5 0.1 180 0.08 0.16 0 0.3 -j0.2 -j5 0.1 -150 -j0.5 -30 -j2 -120 -j 13 534 -60 -90 13 535 Figure 5. Input reflection coefficient Figure 7. Reverse transmission coefficient S21 S22 j 90 120 60 j0.5 150 j2 30 0.1 j0.2 0.3 180 2.0 GHz 20 40 0 0 j5 AAAAAA AA AAAAAA AA 0.2 0.5 1 0.8 2.0 GHz 0.1 -j0.2 -150 -j5 -30 -j0.5 -120 13 536 1 5 -j2 -60 -90 Figure 6. Forward transmission coefficient TELEFUNKEN Semiconductors Rev. A3, 31-Oct-97 13 537 -j Figure 8. Output reflection coefficient 5 (7) BFR93A/BFR93AR Dimensions of BFR93A in mm 95 11346 Dimensions of BFR93AR in mm 95 11347 6 (7) TELEFUNKEN Semiconductors Rev. A3, 31-Oct-97 BFR93A/BFR93AR Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A3, 31-Oct-97 7 (7)