NFA iconix GATE 18 BACKSIDE CONTACT AWD D ARE SYMMETRICAL 0.018 (0.457) ALL DIMENSIONS IN INCHES fale DIMENSIONS IN MILLIMETERS) n-channel JFET designed for... = ~Low and Medium Frequency Single and Differential Amplifiers = High Input tmpedance Amplifiers TYPE PACKAGE PRINCIPAL DEVICES Dual TO-71 2N3954, 2N3954A, 2N3955, 2N3955A, 2N3956-8, 2N5452-54 Single TO-72 2N3684-7 Dual Chip 2N3955CHP, 2ZN3956CHP-8CHP, 2N5454CHP Single Chip 2N3684CHP-7CHP PERFORMANCE CURVES (25C unless otherwise noted) 09 Zz 08 07 a 5 06 2 05 Zz goa re S03 2 Fad o Ip DRAIN CURRENT (mA) 3 Sf, FORWARD TRANSCONDUCTANCE (umhos) Pe = N z N a a ws 3 Output Characteristic & 8 12 % a Vog ~ DRAIN-SOURCE VOLTAGE {VOLTS) Transfer Characteristics =20V 0 7 -2.0 -3.0 40 Vs GATE-SOQURCE VOLTAGE (VOLTS) Transconductance Characteristics 8 -1.0 -2.0 -3.0 40 Vas - GATE-SOURCE VOLTAGE (VOLTS) Output Characteristic Ip DRAIN CURRENT (mA) Q 4 a 12 20 Vs DRAIN-SOURCE VOLTAGE {VOLTS} Transfer Characteristics 6.0 =20V N e S - a @ Ip DRAIN CURRENT (mA} uy 0 -1.0 -2.0 -3.0 40 Vas GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics 3000 Vps = 20V f= kHz A 3 1200 g St, FORWARD TRANSCONDUCTANCE (umhos} 1.0 -2.0 -3.0 4.0 Vs GATE-SOURCE VOLTAGE (VOLTS} ps} Siliconix BENEFITS: - - @ Wide Dynemic Range tg Specified @ Vpg = 20 V Low Capacitance Cjgg < 4 pF Low Output Conductance Output Characteristic ip ~ DRAIN CURRENT (mA) Q a 20 Vos - DRAIN-SOURCE VOLTAGE (VOLTS) Static Drain-Source ON Resistance vs Gate-Source Cutoff Voltage 3 = 100nA =0 200 o- -6.0 8.0 Vos (ott) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) "pg DRAIN-SOURCE ON RESISTANCE (OHMS) ON Resistance vs Ambient Temperature 15 Ip= uA 1.47~ Veg =0 13 12 ws 1.0 09 O8 7 tos RELATIVE TO 25C VALUE 06 0.8. 55 -15 26 c] 145 T- TEMPERATURE (C) 1979 Siliconix incorporatedPERFORMANCE CURVES (Cont'd) (25C unless otherwise noted) Drain Current and Transconductance Common-Source Output Conductance Common-Source Output Conductance vs Gate-Source Cutoff Voltage vs Drain-Source Voltage vs Drain Current = 100. 100 zg 0 000 # 10 Voaro Tose EE 94 2 F f= 1kHz 1 e go = z 2 8 G8 | Vesto @tp=1 zo0Z 5 z 8 = a? 3g 100 8 10 Z 6 yoo FE @ = Z E ao 5 & 8 = z zg < 3 eo4 1200 8 5 Vasiott} = 4.3 < < 6 & 10 2 10 er 3 4 5 a B 2 8 3 g 2 soo & 1 3 1 8 8 g 3 Vestoft) *~1.4V = 0 oO 2 01 0 -1 -2 -3 -4 - +6 7 -8 o 5 0 15 20 25 30. 0,01 0.1 1.0 10 Ve@siotf) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Vps DRAIN-SOURCE VOLTAGE (VOLTS) Ip DRAIN CURRENT {mA} Common-Source / Drain Current and Transconductance Forward Transconductance Leakage Currents vs Ambient vs Ambient Temperature vs Drain Current Temperature 15 10K 14 = 13 @t= kHz 3 kg, 2 10 o c = e o 1K w 14 2 = > a = E 10 G o1 a 9 3 z oc 08 = 3 w c 3 0B & 100 5 07 & 0.01 0.6 & 2 06 | 0,001 -55 -185 2 65 106 146 # 10 Oo 3 50 75 #100 #126 6150 T- TEMPERATURE (C) 0.01 0.1 1.0 10 1 - TEMPERATURE (C) Ip ~ ORAIN CURRENT (mA} Gate Operating Current vs Common-Source Input Capacitance Equivalent input Noise Voltage and Drain-Gate Voltage vs Gate-Source Voltage Noise Current vs Frequency 10 1K pg tv 10-13 f=1 pgs = 0.87mA = i z= z ~ Tn z 1.0 & 2 a0 MET - 8 i 8 8 Ft 2 = 2 < 1 s 5 as 2 Rivetncat oft i 3S oS > : s # Ut : i 8 z = : 90.01 = 3 = = ae x Ip 2 mAs # F916 oss rm & pI, tozma LUT 0.001 i 1 | J o -2 4 6 10 100 mK 0 5 10 5 20 25 30 Vgs - GATE-SOURCE VOLTAGE (VOLTS) f FREQUENCY (Hz) Vog ~ ORAIN-GATE VOLTAGE (VOLTS) 1979 Siliconix incorporated 5-7 VIN xIUODSI