SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
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Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8812
Issue 1
Page 1 of 3
2N6059
• High Current Capability.
• Hermetic TO3 Metal package.
• Screening Options Available.
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 100V
VCEO Collector – Emitter Voltage 100V
VEBO Emitter – Base Voltage 5V
IC Continuous Collector Current 12A
IB Base Current 0.2A
PD Total Power Dissipation at TC = 25°C 150W
Derate Above 25°C 1.00W/°C
TJ Junction Temperature Range -55 to +175°C
Tstg Storage Temperature Range -55 to +175°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJC
Thermal Resistance, Junction To Case 1.00 °C/W
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6059
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8812
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
ICEO Collector-Emitter Cut-Off
Current VCE = 50V 1.0 mA
VCE = 100V VBE = 1.5V 10 µA
ICEX Collector=Emitter Cut-Off
Current
TC = 150°C 5 mA
IEBO Emitter-Base Cut-Off
Current VEB = 5V 2 mA
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 100mA 100
VBE Base-Emitter Voltage
(nonsaturated) IC = 6A VCE = 3V 2.8
VBE(sat)
(1)
Base-Emitter Saturation
Voltage IC = 12A IB = 120mA 4
IC = 12A IB = 120mA 3
IC = 6A IB = 24mA 2
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
TC = 150°C 2
V
IC = 1.0A VCE = 3V 1000
IC = 6A VCE = 3V 1000 18000
TC = -55°C 300
hFE
(1)
Forward-Current Transfer
Ratio
IC = 12A VCE = 3V 150
DYNAMIC CHARACTERISTICS
IC = 5A VCE = 3V
|hfe|
Magnitude of Common-
Emitter Small Signal
Forward Current Transfer
Ratio f = 1.0MHz 10 250
IC = 5A VCE = 3V
hfe Small Signal Forward-
Current Transfer Ratio f = 1.0kHz
1000
f = 1.0MHz VCB = 10V
Cobo Output Capacitance IE = 0 300 pF
IC = 5A VCC = 30V
ton Turn-On Time IB = 20mA
2
IC = 5A
VCC = 30V
toff
Turn-Off Time
IB = 20mA
10
µs
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6059
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8812
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
1 2
6.35 (0.25)
9.15 (0.36)
Case (3)
3
8
.
6
1
(
1
.
5
2
)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
7.92 (0.312)
12.70 (0.50)
1.52 (0.06)
3.43 (0.135)
0.97 (0.060)
1.10 (0.043)
3.84 (0.151)
4.09 (0.161)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
22.23 (0.875)
m
a
x
.
TO3 (TO
-
204AA) METAL PACKAGE
Underside View
Pin 1 - Base Pin 2 - Emitter Case - Collector
