IRF120/1 ot 22/123 FEATURES Low Rpsjon) Fast switching times Low input capacitance TO-3 package (Standard) PRODUCT SUMMARY SAMSUNG SEMICONDUCTOR Inc awk tat tal aS Poker OOGSOL4 & Improved inductive ruggedness Rugged polysilicon gate cell structure Extended safe operating area Improved high temperature reliability _ Part Number Vos Rosjen) IRF120__ 100V 0.302 8.0A IRF121 60V 0.302 8.0A IRF122 100V 0.400 "7.08 IRF123 60V 0.402 7.0A MAXIMUM RATINGS 8D_ 05069 | DTI ~ N-CHANNEL ~ POWER MOSFETS T0-3 * - Characteristic Symbol IRF120 IRF121 IRF122 IRF123 Unit Drain-Source Voltage (1) Voss 100 60 100 60 Vdc Drain-Gate Voltage (Res=1.0M0) (1) Vocr 100 - 60 100 60 Vde Gate-Source Voltage 20 Vdc Continuous Drain Current Tc=25C 8.0 8.0 7.0 7.0 Adc Continuous Drain Current Tc=100C 5.0 5.0 4.0 4.0 Adc Drain CurrentPulsed (3) 32 32 28 28 Adc Gate CurrentPulsed +1.5 Adc Total Power Dissipation @ Tc=25C | Derate above 25C 40 0.32 Watts Wie Operating and Storage Junction Temperature Range Ty, Tstg ~-56& to 150 C Maximum Lead Temp. for Soldering Purposes, 1/8 from case for seconds Th . 300 C Notes: (1) Tj=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature 6 ce SAMSUNG SEMICONDUCTOR 68NDUCTOR_INC __ 98D 05070 | i..7884142 SAMSUNG SEMICO _DT34- 1 25 98 pe ffeseyiu2 oooso7o a BPs Te oN IRF120/121/122/123 | __. POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Characteristic Symbol} Type |Min| Typ | Max |Units; ; Test Conditions a Inet 22 too] | | v |Ves=ov Drain-Source Breakdown BVpss . . Voltage IRFI21) 6 1 V |fo=250uA | ; * |IRF123 . Gate Threshold Voltage Vestn | ALL }2.0] | 4.0 | V |Vps=Ves, Ip>=250pA Gate-Source Leakage Forward} lass ALL | | | 100 {| nA |Ves=20V . ) Gate-Source Leakage Reverse less ALL | | |-100/ nA |Ves=-20V : Zero Gate Voltage loss ALL Loo 250 | wA iVps=Max. Rating, Vas=OV Drain Current - | ']1000] pA |Vps=Max. Ratingx0.8, Ves=OV, Tc=125C On-State Drain-Source Rr ot 8.0;-| | A : . oton) Vos>lpjon)<Roston) max, Vas= 10V -|Gurrent (2) - IRF122 wnFi23|7O; | | & _ [81201 | ps|o.00) 0 ' Static Drain-Source On-State Rosten) : Ves=10V, In=4.0A Resistance (2) IRF122 a ; : IRFi23| 0.30) 0.40 ; Forward Transconductance (2)| gis ALL [1.5/3.4] 8 |Vps>Ipjon)<Rosion) max., Ipb=4.0A Input Capacitance . Ciss ALL | |460; 600} pF- Output Capacitance Coss ALL | [220] 400 | pF |Ves=OV, Vpg=25V, f=1.0MHz Reverse Transfer Capacitance| Ciss ALL | | 70 | 100} pF Turn-On Delay Time taton) ALL | | /|-40 | ns Rise Time : t ALL _ 70 ns Vop=0.5BVpss, Ip=4.0A, Zo=500 - (MOSFET switching times are essentially Turn-Off Delay Time tao) | ALL | ~ | | 100 | MS |independent of operating temperature.) t , - |Fall Time ti ALL | | ]| 70 | ns Total Gate Charge . . (Gate-Source Plus Gate-Drain) Qg | ALL | | 9.8) 15 | nC |Veg=10V, In=10A, Vos=0.8 Max. Rating 36 7 (Gate charge is essentially independent of Gate-Source Charge Qgs ALL | . _ nc operating temperature. ) Gate-Drain (Miller) Charge Qgea ALL | |6.3; nc THERMAL RESISTANCE Junction-to-Case Rio | ALL | |] | 3.12; KW Case-to-Sink . Rincs ALL | |0.1{ | K/W {Mounting surface flat, smooth, and greased Junction-to-Ambient Rita ALL | | | 30 | K/W {Free Air Operation Notes: (1) Ty=25C to 150C (2) Puise test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature Ge samsunc SEMICONDUCTOR 69 sa? | . .964142 SAMSUNG SEMICONDUCTOR INC 98D O5071 Db T-34-I{ ~ Pe TQ DE | 7964242 OOOSO71 4 | N-CHANNEL IRF120/121/122/123 , POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic - |Symbol/ Type |Min|Typ| Max |Unlits Test Conditions . inF1201 [|_| go |-a Continuous Source Current Is IRFi21 . . (Body Diode) Re PA |!| 7.0 A {Modified MOSFET symbol D showing the integral @ 7 tye IRF120; _{| _ | 30 | a_ |feverse P-N junction rectifier & $ i, Pulse Source Current Tas IRF121 (Body Diode) (3) IRF122 . : ; iRF123| ~| | 28 | A IRF120 i; 2.5 V jTc=25C, Is=8.0A, Vas=0V Diode Forward Voltage (2) Vsp IRF121 . . ei23| =| | 23 | V [Te=25C, ls=7.0A, Vesov Reverse Recovery Time tr ALL | |280; ns |Ty=150C, tr=8.0A, dir/dt=100A/us Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature a ~ w a T= 125C. u uw L . = = am 25 c = < - =z i g c c > c 6 3 ; : 5 & s 5 Vos 4 a 20 40 s0 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typical Transfer Characteristics = a a g < < 1 zg - ze: > 7 3 a = Zz 3 z a 2 s 0. 1.0 2 5 10 20 0 #100 200 500 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics Maximum Safe Operating Area e5 samsunc SEMICONDUCTOR , 70. 79641 po de Brseuaua O0050%e & ; IRF1 20/121/122/123 ke x 142 SAMSUNG | _SEMICONDUCTOR ING 98D. 0s072 N-CHANNEL POWER MOSFETS _D 39ell o THERMAL IMPEDANCE (PER UNIT) o ZeacttVituc, NORMALIZED EFFECTIVE TRANSIENT - Pp Ipp, REVERSE DRAIN CURRENT (AMPERES) gis, TRANSCONDUCTANCE (SIEMENS) ip, DRAIN CURRENT (AMPERES) Typical Transconductance Vs. Drain Current IN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Rosion) DRAIN-TO-SOURCE ON RESISTANCE (NORMAUZED) i. SQUARE WAVE PULSE QURATION (SECONDS) Effective T lent Th el 1. Duty Fact, pot 2 Per Unt Base=Ayc=3 12 Oeg 3 TarTo=PouZnx tll. to-Case Vs. Pulse Duration 2 1 0 Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical SourceDrain Diode Forward Voitage 1.0 Vos 10V a = x a 2 a . ~40 0 40 80 120 160 Tz, JUNCTION TEMPERATURE (C) Tj, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normaftized Or-Resistance Vs. Temperature gee caMSUNG SEMICONDUCTOR 714142 SAMSUNG SEMIC + 448 ve IRF120/121/122/123 C, CAPACITANCE (pF) Qo : Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Capacitance Vs. Drain to Source Voltage DURATION. JNITIAL 7, OF 2 Ops . Rosin. DRAIN-TO-SOURCE ON RESISTANCE (OHMS) o 10 40 50 Ip, ORAIN CURRENT (AMPERES) Typica! On-Resistance Vs. Drain Current Pp, POWER DISSIPATION (WATTS) o 20 40 60 ao 100 120 140 160 Ta, AMBIENT TEMPERATURE (C) Power Vs. Temperature Derating Curve ONDUCTOR ING. 74b4L42 Go005073 4 Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) ip, DRAIN CURRENT (AMPERES) o me ALON ANNEL POWER MOSFETS 7 ~ Q,, TOTAL GATE CHARGE (nC) Typical Gate Charge Vs. Gate-To-Source Voltage Ta, AMBIENT TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature pres: ese SAMSUNG SEMICONDUCTOR 72 ae ee oe Pe