CJD13003 NPN SILICON POWER TRANSISTOR DPAKz! DPAK CASE POWER MAXIMUM RATINGS (Tc=25C) SYMBOL UNITS Collector-Emitter Voltage VoEV 700 Vv Collector-Emitter Voltage VCEO 400 Vv Emitter-Base Voltage VEBO 9.0 Vv Continuous Collector Current lo 1.5 A Peak Collector Current Iom 3.0 A Continuous Base Current lB 750 mA Peak Base Current IBM 1.5 A Continuous Emitter Current le 2.25 A Peak Emitter Current lEM 4.5 A Power Dissipation (Tc=25C) Pp 15 WwW Power Dissipation (T4=25C) Pp 1.56 Ww Operating and Storage Junction Temperature TST stg -65 to +150 C Thermal Resistance Qc 8.33 C/W Thermal Resistance OQJA 80.1 OCW ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IcEV VcE=700V, VBE(oft)=1 .5V 100 pA IcEV VcE=700V, VBE(off)=1 SV, To=100C 2.0 mA lEBO Vep=9.0V 1.0 mA BVcEO Ic=10mA 400 Vv VCE(SAT) Io=500mA, Ip=100mA 0.5 Vv VGE(SAT) IG=1.0A, lp=250mMA 1.0 V VCE(SAT) Io=1.5A, lp=500mMA 3.0 Vv VCE(SAT) Ic=1.0A, Ip=250mA, To=100C 1.0 V 128 Central . DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD13003 type is an NPN Silicon Power Transistors manufactured in a surface mount package designed for high voltage, high speed power switching inductive applications.SYMBOL VBE(SAT) VBE(SAT) VBE(SAT) FE NFE fT Cob ty tr ts tf TEST CONDITIONS MIN TYP I=500mA, Ip=100mA Ic=1.0A, Ip=250mA Io=1.0A, Ip=250mA, To=100C VcE=2.0V, Io=500mA 8.0 VoE=2.0V, Io=1.0A 5.0 VcE=10V, Ic=100mA, f=1.0MHz 4.0 Vop=t0V, IE=0, f=0.1MHz 20 Voc=125V, Io=1.0A, lgq=IRo=200mA (1) Voc=125V, Io=1.0A, Ip4=Io=200mA (1) Voc=125V, Ic=1.0A, Ipq=lgo=200mA (1) Voc=125V, Ic=1.0A, Ipq=lR2=200mA (1) (1) tp=25us, Duty Cycles1% All dimensions in inches (mm). TOP VIEW .250(6.35) -986(2.19) , .265(6.73) .018(0.45) ea 5.20 .024(0.60) ie 215(5.46) Oso at Jae -235(5.97 -040(1.02) arses, | .035(0.89 - -045(1.14) -181(4.60) LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR 129 .240(6.10) 1368(9.35) _ Roe ee + eet aay 40) -020(0.51 | 1 2 3 a +f e -024(0.60) 9 :025(0.64) .045(1.14) UNITS MHz pF ps HS Hs ps DATA SHEET R2