VNQ690SPTR-E - STMicroelectronics

1/20October 2004

VNQ690SP-E

QUAD CHANNEL HIGH SIDE DRIVER

Rev. 1

Tabl e 1. General Features

(*) Per each channel

■ OUTPUT CURRENT PER CHANNEL: 10A

■ CMOS COMPATIBLE INPUTS

■ OPEN LOAD DETECTION (OFF STATE)

■ UNDERVOLTAGE & OVERVOLT AGE

SHUT- DOWN

■ OVERVOLTAGE CLAMP

■ THERMAL SHUT-D OWN

■ CURRENT LIMITATION

■ VERY LOW STAND-BY POWER DISSIPATION

■ PROTECTI ON AG A INS T:

LOSS OF GROUN D & LOSS OF VCC

■ REVERSE BATTERY PROTECTION (**)

■ IN COMPLIANCE WITH THE 2002/95/EC

EUROPEAN DIRECTIVE

DESCRIPTION

The VNQ690SP-E is a monolithic device made by

using| STMicroelectronics VIPower M0-3

Technology, intended for driving resistive or

inductive loads with one side connected to ground.

This device has four independen t channel s.

Built-in thermal shut down and output current

limitation protect the chip from over temperature

and short circuit.

Figure 1. Package

Tabl e 2. Order Codes

Not e: (**) See application schematic at page 9

Type RDS(on) Iout VCC

VNQ690SP-E 90mΩ (*) 10A 36V

PowerSO-10™

Package Tube Tape and Reel

PowerSO-10™VNQ690SP-E VNQ690SPTR-E

VNQ690SP-E

2/20

Figu re 2. Blo ck D ia gra m

Table 3. Absolute Maximum Ratings

Symbol Parameter Value Unit

VCC Supply voltage (continuous) 41 V

-VCC Reverse supply voltage (continuous) -0.3 V

IOUT Output current (continuous), per each channel Internally limited A

IR Reverse output current (continuous), per each channel -15 A

IIN Input current +/- 10 mA

ISTAT Status current +/- 10 mA

IGND Ground current at TC<25°C (continuous) -200 mA

VESD

Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)

- INPUT

- STATUS

- OUTPUT

- VCC

4000

5000

Ptot Power dissipation at TC=25°C78W

EMAX Maximum Switching Energy

(L=0.38mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=14A) 53 mJ

TjJunction operating temperature -40 to 150 °C

Tstg Storage temperature -65 to 150 °C

UNDERVOLTAGE

OVERVOLTAGE

OVERTEMP. 1

OVERTEMP. 2

LIM2

DEMAG 2

LIM1

DEMAG 1

INPUT 1

INPUT 2

GND

OUTPUT 1

OUTPUT 2

DRIVER 2

DRIVER 1

LOGIC

OVERTEMP. 3

OVERTEMP. 4

LIM4

DEMAG 4

LIM3

DEMAG 3

INPUT 3

INPUT 4 OUTPUT 3

OUTPUT 4

DRIVER 4

DRIVER 3

STATUS STATUS

OPEN L OAD

OFF-STATE

3/20

VNQ690SP-E

Figu re 3. Con f ig urat i on Diagram (Top View) & Su gg e ste d Conne ct ions for U nu s ed an d N.C. Pins

Figure 4. Current and Voltage Conventions

Table 4. Thermal Data

Note: 1. Whe n m ounted on a st andard si ngle- sided FR -4 board wi t h 0.5cm² of Cu (at le ast 35 µm thick)

Note: 2. Whe n m ounted on a st andard si ngle- si ded FR -4 board wi th 6cm² of Cu (at le ast 35 µm th ick).

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case (MAX) per channel 2 °C/W

Rtj-amb Thermal resistance junction-ambient (MAX) 52 (1) 37 (2) °C/W

Connection / Pin Status N.C. Output Input

Floating X X X X

To Ground X Through 10KΩ resistor

GND

OUTPUT 4

OUTPUT 3

OUTPUT 2

OUTPUT 1

STATUS

INP U T 4

INPUT 3

INPUT 2

INPUT 1

(*) VFn = VCCn - VOUTn during reverse battery condition

GND

INPUT 4

INPUT 3

OUT2

IN3

IN4

IN3

OUT2

OUT1

INPUT 1

IN1

INPUT 2

IN2

IN1

IN2

STAT

STATUS

STAT

OUTPUT 4

OUTPUT 3 I

OUT3

OUT4

OUT3

OUTPUT 1

OUTPUT 2

(*)

VNQ690SP-E

4/20

ELECTRICAL CHARACTERISTICS

(VCC=6V up to 24V; -40°C<Tj<150°C unless otherw ise specified)

Table 5. Power (Per each channel)

Not e: (#) Per device.

Table 6. Protection (see note 1)

(per each channel)

Note: 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be

used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration

and n um ber of ac tivation cyc l es

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VCC (#) Operating supply voltage 6 13 36 V

VUSD (#) Undervoltage shutdown 3.5 4.6 6 V

VUVhyst (#) Undervoltage hysteresis 0.2 1 V

VOV (#) Overvoltage shutdown 36 V

VOVhyst (#) Overvoltage hysteresis 0.25 V

IS (#) Supply current

Off state; VIN=VOUT=0V; VCC=13.5V

Tj=25°C

On state; VIN=3.25V; 9V<VCC<18V

µA

RON On state resistance IOUT=1A; Tj=25°C; 9V<VCC<18V

IOUT=1A, Tj=150°C; 9V<VCC<18V 90

180 mΩ

mΩ

IL(off1) Off State Output Current VIN=VOUT=0V 0 50 µA

IL(off2) Off State Output Current VIN=0V; VOUT=3.5V -75 0 µA

IL(off3) Off State Output Current VIN=VOUT=0V; VCC=13V; Tj =125°C 5 µA

IL(off4) Off State Output Current VIN=VOUT=0V; VCC=13V; Tj =25°C 3 µA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

TTSD Shutdown tempe ratur e 150 170 2 00 °C

TRReset temperature 135 °C

Thyst Thermal hysteresis 7 15 25 °C

ILIM DC Short circuit current 9V<VCC<36V

6V<VCC<36V 10 14 20

20 A

Vdemag Turn-off output voltage

clamp IOUT=2A; VIN=0V; L=6mH VCC-41 VCC-48 VCC-55 V

VSTAT Status low output

voltage ISTAT=1.6mA 0.5 V

ILSTAT Status leakage current Normal operation; VSTAT=5V 10 µA

CSTAT Status pin input

capacitance Normal operation; VSTAT=5V 25 pF

VSCL Status clamp voltage ISTAT=1mA

ISTAT=-1mA 66.8

-0.7 8V

5/20

VNQ690SP-E

ELECTRICAL CHARACTERISTICS (contin ued)

Table 7. VCC - Output Diode

Table 8. Switching (VCC=13V)

Table 9. Openload Detection (off state) per each cha nnel

Table 10. Logic Input

Figu re 5. Sta tu s Ti m in g Wav eforms

Symbol Parameter Test Conditions Min Typ Max Unit

VFForward on Voltage -IOUT=0.9A; Tj=150°C 0.6 V

Symbol Parameter Test Conditions Min Typ Max Unit

td(on) Tur n-on delay time RL=13Ω channels 1,2,3,4 30 µs

td(off) Tur n-off delay time RL=13Ω channels 1,2,3,4 30 µs

dVOUT/dt(on) Tur n-on voltag e slope RL=13Ω channels 1,2,3,4 See

relative

diagram V/µs

dVOUT/dt(off) Tur n-off voltag e slope RL=13Ω channels 1,2,3,4 See

relative

diagram V/µs

Symbol Parameter Test Conditions Min Typ Max Unit

tSDL Status Delay See Figure 1 (Openload detection

reading must be performed after TDOL). 20 µs

VOL Openload Voltage

Detection Threshold VIN=0V 1.5 2.5 3.5 V

TDOL Openload Detection Delay

at Turn Off VCC=18V 300 µs

Symbol Parameter Test Conditions Min Typ Max Unit

VIL Input Low Level Voltage 1.25 V

VIH Input High Level Voltage 3.25 V

VHYST Input Hysteresis Voltage 0.5 V

IIH Input high level voltage VIN=3.25V 10 µA

IIL Input Current VIN=1.25V 1 µA

VICL Input Clamp Voltage IIN=1mA

IIN=-1mA 6 6.8

-0.7 8V

VIN

VSTAT

tDOL

OPENLOAD STATUS TIMING

VIN

VST AT

OVERTEMP STATUS TIMING

tSDL

VNQ690SP-E

6/20

Table 11 . Truth Table (Per each channe l)

Figure 6. Switching Ch aracteristi cs

CONDITIONS INPUT OUTPUT SENSE

Normal Operation L

Overtemperature L

Undervoltage L

Overvoltage L

Current Limitation L

Output Voltage > VOL L

VLOAD

VIN

80%

10%

dVOUT/dt(on)

td(off)

90%

dVOUT/dt(off)

td(on) tr

7/20

VNQ690SP-E

Tabl e 12. Electrical Transient Requirements

ISO T/R 7637/1

Test Pulse

TEST LEVELS

I II III IV Delays and

Impedance

1 -25 V -50 V -75 V -100 V 2 ms 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω

3a -25 V -50 V -100 V -150 V 0.1 µs 50 Ω

3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0.01 Ω

ISO T/R

7637/1

Test Pulse

Test Levels Result

IIIIIIIV

1CCCC

2CCCC

3aCCCC

3bCCCC

4CCCC

5CEEE

CLASS CONTENTS

C All functions of the device are performed as designed after exposure to disturbance.

E One or more functions of the device is not performed as designed after exposure and cannot be

returned to proper operation without replacing the device.

VNQ690SP-E

8/20

Figure 7. Waveforms

STATUS

INPUTn

NORMAL OPERATION

UNDERVOLTAGE

VCC VUSD

VUSDhyst

INPUTn

OVERVOLTAGE

VCC

VCC>VOV

STATUS

INPUTn

STATUS

undefined

OVERTEMPERATURE

INPUTn

STATUS

TTSD

LOAD VOLTA GEn

VCC<VOV

LOAD VOLTAGEn

LOAD VOLTA GEn

LOAD CURRENTn

STATUS

INPUTn

OPENLOAD with external pull-up

LOAD VOLTAGEn

tDOL tDOL

VOL

9/20

VNQ690SP-E

Figure 8. Application Schematic

GND PROTECTION NETWORK AGAINST

REVERSE BATTERY

Solution 1 : Resistor in the gr ound line (R

GND

only). T his

can be used with any type of load.

The following is an indication on how to dimension the

GND

resistor.

1) R

GND

≤ 600mV / (IS(on)max).

2) R

GND

≥ (−VCC) / (-IGND)

where -IGND is the DC reverse ground pin current and can

be found in the absolute maximum rating section of the

device’s datasheet.

Power Dissipation in R

GND

(when VCC< 0: durin g rever se

battery situations) is:

PD= (-VCC)2/R

GND

This resistor can be shared amongst several different

HSD. Please note that the value of this resistor should be

calculated with fo rmula (1) where IS(on)max becom es the

sum of the maximum on-state currents of the different

devices.

Please note that if the microprocessor ground is not

common with the device ground then the R

GND

will

produce a shif t (IS(on)max * R

GND

) in the input thr esholds

and the status output values. This shift will vary

depending on how many devices are ON in the case of

several high side drivers sharing the same R

GND

If the calculated power dissipation leads to a large

resistor or several devices have to share the same

resistor then the ST suggests to utilize Solution 2 (see

below).

Solution 2: A diode (D

GND

) in the ground line.

A resistor (R

GND

=1kΩ) should be inserted in parallel to

GND

if the device will be driving an inductive load.

This small signal diode can be safely shared amongst

several diffe rent HSD. Also i n this case, the pr esence of

the ground network will produce a shift (

600mV) in the

input threshold and the status output values if the

microprocessor ground is not common with the device

ground. This shift will not vary if more than one HSD

shares the same diode/resistor network.

Series resistor in INPUT and STATUS lines are also

required to p reven t tha t, d uring bat tery voltag e tr ansie nt,

the current exceeds the Absolute Maximum Rating.

Safest co nfigu ration for unu sed INPU T a nd S TAT US pin

is to leave them unconnected.

LO AD DUMP PROT ECTION

Dld is necessary (Voltage Transient Suppressor) if the

load dump peak voltage exceeds VCC max DC rating.

The same applies if the device will be subject to

transients on the V CC line that are greater than the on es

shown in the ISO T/R 7637/1 table.

+5V

prot

STATUS

INPUT1

+5V

OUTPUT3

OUTPUT1

OUTPUT2

OUTPUT4

INPUT3

INPUT4

prot

INPUT2

GND

Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.

VNQ690SP-E

10/20

µC I/Os PROTECTION:

If a ground protection network is used and negative

transient are present on the VCC line, the control pins will

be pulled negative. ST suggests to insert a resistor (Rprot)

in line to prevent the µC I/Os pins to latch-up.

The value of these resistors is a compromise between the

leakage current of µC and the current required by the

HSD I/Os (Input levels compatibility) with the latch-up

limit of µC I/Os.

-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-V

GND

) / IIHmax

Calculation example:

For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V

5kΩ ≤ Rprot ≤ 65kΩ.

Recommen ded R pr ot value is 10kΩ.

11/20

VNQ690SP-E

Figure 9. Off State Output Current

Figure 10. Input High Level

Figure 11. Input Clamp Voltage

Figure 12. High Level Input Current

Figure 13. Input Low Level

Figure 14. Input Hysteresis Voltage

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

1.25

1.5

1.75

2.25

2.5

2.75

3.25

3.5

IL(off1) (µA)

Vcc=24V

Vout=0V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

2.25

2.5

2.75

3.25

3.5

3.75

Vih (V )

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

6.25

6.5

6.75

7.25

7.5

7.75

Vicl (V)

Iin=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0.5

1.5

2.5

3.5

4.5

Iih (µA)

Vin=3.25V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

1.2

1.4

1.6

1.8

2.2

2.4

2.6

Vil (V )

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0.5

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

Vihyst (V )

VNQ690SP-E

12/20

Figure 15. Overvoltage Shutdown

Figure 16. Turn-on Voltage Slope

Figure 17. I LIM Vs T case

Figure 18. Openloa d Off State Detection

Threshold

Figure 19. Turn-off Voltage Slope

Figure 20. On State Resistance Vs VCC

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

32.5

37.5

42.5

47.5

Vov (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

100

150

200

250

300

350

400

450

500

dVout/dt(on) (V/ms)

Vcc=13V

RI=13Ohm

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

7.5

12.5

17.5

22.5

Ilim (A)

Vcc=13V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0.5

1.5

2.5

3.5

4.5

Vol (V)

Vin=0V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

100

150

200

250

300

350

400

450

500

550

600

dVout/dt(off) (V/ms)

Vcc=13V

RI=13Ohm

0 5 10 15 20 25 30 35 40

Vcc (V)

100

120

140

160

Ron (mOhm)

Iout=1A

Tc= 25ºC

Tc= -40ºC

Tc= 150ºC

13/20

VNQ690SP-E

Figure 21. On State Resistance Vs Tcase

Figure 22. Status Leakage Current

Figure 23. Status Clamp V oltage

Figu re 24. S t at us Low Output V ol ta ge

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

100

120

140

160

Ron (mOhm)

Iout=1A

Vcc=9 V; 18V & 36V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.045

0.05

Ilstat (µA)

Vstat=5V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

6.6

6.7

6.8

6.9

7.1

7.2

7.3

7.4

Vscl (V)

Istat=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Vstat (V)

Istat=1.6mA

VNQ690SP-E

14/20

Figure 25. Maximum turn of f current versus load inductance

A = Single Pulse at TJstart=150ºC

B= Repet iti ve pulse at TJstart=100ºC

C= Repetitive Pulse at TJstart=125ºC

Conditions:

VCC=13.5V

Values are generated wit h RL=0Ω

In case of repetitive pulses , Tjstart (at begi nning of

each demagnetization) of every pulse must not

exceed the temperature specified above for

curves B and C.

100

0.01 0.1 1 10 100

L(mH)

ILMAX (A)

VIN, IL

Demagnetization Demagnetization Demagnetization

15/20

VNQ690SP-E

PowerS O-10™ Thermal Data

Figu re 26. P ow e rS O-1 0™ PC Boa rd

Figure 27. Rthj-amb Vs PCB copper area in open bo x free air condition

Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,

Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm2).

0246810

PCB Cu heatsink area (cm^2)

RTHj_amb (°C/W)

Tj-Tamb=50°C

VNQ690SP-E

16/20

Figure 28. P ow erS O-10 Th ermal Imp edance Jun ction Am bient Singl e Pulse

Figu re 29 . Th erm al fittin g m od e l of a double

channel HSD in PowerSO -10 Pulse calculation formula

Table 13. Thermal Parameter

0.01

0.1

100

1000

0.0001 0.001 0.01 0.1 1 10 100 1000

Time (s)

ZTH (°C/W)

Footprint

6 cm

T_amb

Pd1

C3 C4

R3R1 R6R5R2

C5 C6C2

Pd2

C1 C2

Tj_1

Tj_2

Area/island (cm2) Footprint 6

R1 (°C/W) 0.05

R2 (°C/W) 0.3

R3( °C/W) 0.3

R4 (°C/W) 0.8

R5 (°C/W) 12

R6 (°C/W) 37 22

C1 (W.s/°C) 0.001

C2 (W.s/°C) 5.00E-03

C3 (W.s/°C) 0.02

C4 (W.s/°C) 0.3

C5 (W.s/°C) 0.75

C6 (W.s/°C) 3 5

ZTHδRTH δZTHtp 1δ–()+⋅=

where δtpT⁄=

17/20

VNQ690SP-E

PACKAGE MECHANICAL

Table 14. PowerSO-10™ Mechanical Data

No te : (*) Mua r onl y POA P013P

Figure 30. PowerSO-10™ P ackage Dimensions

Symbol millimeters

Min Typ Max

A 3.35 3.65

A (*) 3.4 3.6

A1 0.00 0.10

B 0.40 0.60

B (*) 0.37 0.53

C 0.35 0.55

C (*) 0.23 0.32

D 9.40 9.60

D1 7.40 7.60

E 9.30 9.50

E2 7.20 7.60

E2 (*) 7.30 7.50

E4 5.90 6.10

E4 (*) 5.90 6.30

e 1.27

F 1.25 1.35

F (*) 1.20 1.40

H 13.80 14.40

H (*) 13.8 5 14.35

h 0.50

L 1.20 1.80

L (*) 0.8 0 1.10

a0º 8º

α (*) 2º 8º

DETAIL "A"

PLANE

SEATING

= =

0.10 A

DET AIL "A"

SEATING

PL A NE

0.25

P095A

VNQ690SP-E

18/20

Figure 31. PowerSO-10™ Suggested Pad Layout And Tube Shipment (No Suffix)

Figure 32. Tape And Reel Shipment (suffix “TR”)

6.30

10.8 - 11

14 .6 - 14 .9

9.5

51.27

0.67 - 0.73

0.54 - 0.6

MUARCASABLANCA

All d imens ions are in mm.

Base Q. ty Bulk Q.ty Tube le ngth (± 0.5) A B C (± 0.1)

Casablanca 50 1000 532 10.4 16.4 0.8

Muar 50 1000 532 4.9 17.2 0.8

REEL DIMENSIONS

All dimensions are in mm.

Base Q.ty 600

Bulk Q.ty 600

A (max) 330

B (min) 1.5

C (± 0.2) 13

F20.2

G (+ 2 / -0) 24.4

N (min) 60

T (max) 30.4

TAPE DIMENSIONS

According to Electronic Industries Association

(EIA) Standard 481 rev. A, Feb. 1986

All dimensions are in mm.

Tape width W 24

Tape Hole Spacing P0 (± 0.1) 4

Component Spacing P 24

Hole Diameter D (± 0.1/-0) 1.5

Hole Diameter D1 (min) 1.5

Hole Position F (± 0.05) 11.5

Compartment Depth K (max) 6.5

Hole Spacing P1 (± 0.1) 2

Top

cover

tape

End

Start

No componentsNo co m ponents Components

500m m min

500mm min

Em pt y com ponents pockets

saled with cover tape.

User direction of feed

19/20

VNQ690SP-E

RE VISION HISTORY

Date Revision Description of Changes

Oct. 2004 1 - First Issue.

VNQ690SP-E

20/20

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by i m plicati on or otherwise under any pate nt or patent ri ghts o f STMic roelectronics. Specifications mentioned i n t hi s publ i cation are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for us e as cri t i cal com ponents in l i fe support de vices or s ys tems without express written approval of STMi croele ct ronic s.

The ST l ogo is a re gi stered tr ademar k of STM i croel ectro ni cs .

All other nam es are t he propert y o f thei r respective owners

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