Silicon Phototransistor
SDP8405
17 September 1997
DESCRIPTION
FEATURES
T-1 plastic package
•
20¡ (nominal) acceptance angle
•
Consistent optical properties
•
Wide sensitivity ranges
•
Mechanically and spectrally matched to
SEP8505 and SEP8705 infrared emitting diodes
•
The SDP8405 is an NPN silicon phototransistor transfer
molded in a T-1 clear plastic package. Transfer molding
of this device assures superior optical centerline
performance compared to other molding processes.
Lead lengths are staggered to provide a simple method
of polarity identification.
(.51)
.020SQ.LEAD TYP.
.050
(1.27)
DIA.
(3.94)
.155
EMITTER
COLLECTOR
DIA.
.125(3.18)
.115(2.92)
MIN.
(12.7)
.500
.03(.76)
.180(4.57)
.200(5.08)
MAX.
(6.35)
.250
.05(1.27) LEAD TYP.
DIM_100.ds4
OUTLINE DIMENSIONS
in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
© Honeywell Inc.
Silicon Phototransistor
SDP8405
17 September 1997
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MINPARAMETER SYMBOL TYP MAX
SCHEMATIC
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5 V
Power Dissipation
70 mW [À]
Operating Temperature Range
-40¡C to 85¡C
Storage Temperature Range
-40¡C to 85¡C
Soldering Temperature (5 sec)
240¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.18 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
© Honeywell Inc.
Silicon Phototransistor
SDP8405
17 September 1997
SWITCHING TIME TEST CIRCUIT
cir_015.cdr
SWITCHING WAVEFORM
cir_004.cdr
Responsivity vs
Angular Displacement
gra_047.ds4
Angular displacement - degrees
Relative response
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Collector Current vs
Ambient Temperature
gra_039.ds4
Ambient temperature - °C
Normalized collector
current
0.0
0.4
0.8
1.2
1.6
2.0
0 10 20 30 40 50 60 70 80
Fig. 2
Dark Current vs
Temperature
gra_301.cdr
Fig. 3 Non-Saturated Switching Time vs
Load Resistance
gra_041.ds4
Load resistance - Ohms
Response time - µs
1
10
100
10 100 1000 10000
Fig. 4
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
© Honeywell Inc.
Silicon Phototransistor
SDP8405
17 September 1997
Spectral Responsivity
gra_036.ds4
Wavelength - nm
Relative response
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
400 600 800 1000 1200
Fig. 5 Coupling Characteristics
with SEP8505
gra_029.ds4
Lens-to-lens separation - inches
Light current - mA
0.1
0.2
0.4
1
2
4
10
0.01 0.2 0.4 0.7 1 0.02 0.04 0.1
0.7
7
VCE = 5 V
IF = 25 mA
TA = 25 °C
Fig. 6
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
© Honeywell Inc.