-FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR eee FAIRCHILD Pe eS A Schlumberger Company By pe aueae7y ooa7sou s 2N718A 2N1613 NPN Small Signal General Purpose 84D 27504 T-29-23 D am Amplifiers Vceo ... 32 V (Min) PACKAGE tire ... 40-120 @ 150 mA, 20 (Min) @ 500 mA 2N718A TO-18 2N1613 TO-5 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -65 to 200C Operating Junction Temperature 200C Power Dissipation (Notes 2 & 3) Total Dissipation at 718A 1613 25 C Ambient Temperature 0.5 mW 0.8 W 100 C Ambient Temperature 1.0 mW 17W 25 C Case Temperature 1.8W 3.0 W Voltages & Currents Vceo Collector to Emitter Voltage 32 V Veen Collector to Emitter Voltage 50 V (Ree < 10 9) (Note 4) Vcso Collector to Base Voltage 75V Veeo Emitter to Base Voltage 7.0V ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS BVcso Collector to Base Breakdown Voltage 75 Vv ic = 0.1 mA, le =O BVego Emitter to Base Breakdown Voitage 7.0 Vv le = 0.1 mA, Ic =O lego Emitter Current 10 nA Ves = 5.0 V, lo =0 fcgo Collector Cutoff Current 10 nA Vee = 60 V, fe = 0 10 pA Ves = 60 V, le = 0, Ta = 150C hee DC Current Gain 20 Ic = 0.1 MA, Vez = 10 V Nre DC Pulse Current Gain (Note 5) 40 120 le = 150 MA, Vee = 10 V 35 lo = 10 MA, Vee = 10 V 20 Ic = 500 mA, Voz = 10 V | 20 Ic = 10 mA, Vee = 10 V, Ta = 55 C NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200C and junction-to- case thermal resistance of 97.2C (derating factor of 10.3 mW/C), junction-to-ambient thermal resistance of 350 C/W (derating factor of 286 mW/ C) for 2N718A; junction-to-case thermal resistance of 58.3 Cw (derating factor of 17.2 mW/C) junction-to-ambient thermal resistance of 219C (derating factor of 456 mW/ C) for 2Ni6t3. 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 us; duty cycle < 1%. 6. For product family characteristic curves, refer to Curve Set T145. a A PS 3-224_ FAIRCHILD SEMICONDUCTOR seme st ay pe auese74 ooevsos 7 ff 3469674 FAIRCHILD. SEMICONDUCTOR 2N718A/2N1613 84D 27505 Da T-3A- 25 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL} CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS Vceatsua | Collector to Emitter Sustaining Voltage] 50 Vv Ic = 100 mA (pulsed), Ree < 109 (Note 5) Vceisat Collector to Emitter Saturation Voltage 1.6 Vv lc = 150 mA, Is = 15 mA (Note 5) Vecisan Base to Emitter Saturation Voltage 1.3 Vv Ic = 150 mA, lp = 15 MA (Note 5) Cob Output Capacitance 25 pF Ves = 10V, le =0 Cre Input Capacitance 80 pF Ves = 0.5 V, Ic =O Nite High Frequency Current Gain 3.0 Ilo = 50 mA, Vee = 10 V, f = 20 MHz hte Smail Signal Current Gain 30 100 Io = 1.0 MA, Vor = 5.0 V, f = 1.0 kHz 35 150 Ilo = 5.0 MA, Vee = 10 V, f = 1.0 KHz hi Input Resistance 24 34 0 Io = 1.0 MA, Ves = 5.0 V, f = 1.0 kHz 4.0 | 8.0 a Ic = 5.0 mA, Vea = 10 V, f= 1.0 KHz Hop Output Conductance 0.05 | 0.5 pmho | Ie = 1.0 mA, Vea = 5.0 V, f = 1.0 kHz 0.1 1.0 pmho | Ic = 5.0 mA, Vos = 10 V, f= 1.0 kHz yp Voltage Feedback Ratio 3.0 x10 | Ie =1.0 MA, Ves = 5.0 V, f = 1.0 kHz 3.0 x10-4 | Io = 5.0 mA, Vos = 10 V, f= 1.0 kHz tett+t| (test circuit no. 287) 30 ns lo = 50 MA, Veco = 20 V NF Noise Figure 12 dB le = 0.3 mA, Vce = 10 V, f =1.0 kHz, Rs = 510 2 BW = 1.0 Hz 3-225[FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR fe FAIRCHILD Se A Schlumberger Company a4 De syese74 coe7sin a 9 84D 27516 Dua 2N/PN/FTSO2218 ON/PN/FTSO2221 |~ **- 22 NPN Small Signal General Purpose Amplifiers & Switches Vcco ... 30 V (Min) Temperatures Storage Temperature ABSOLUTE MAXIMUM RATINGS (Note 1) 2N Operating Junction Temperature 178C Power Dissipation (Notes 2 & 3) Total Dissipation at 2N2218 25 C Ambient Temperature 0.8 mW 25C Case Temperature 3.0 W Tota! Dissipation at PN2218 25C Ambient Temperature 0.625 W 25C Case Temperature 1.0W Voltages & Currents Vceo Collector to Emitter Voitage 30 V (Note 4) Vcpo Collector to Base Voltage 60V Veso Emitter to Base Voltage 5.0V Ic Collector Current 800 mA PN/FTSO -65 C to 200 C ~55 C to 16 C 150 C 2N2221 O5W 18W FTSO 0.350 W* PACKAGE 2N2218 TO-39 2N2221 TO-18 PN2218 TO-92 PN2221 TO-92 FTSO2218 TO-236AA/AB FTS02221 TO-236AA/AB ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS BVceo Collector to Base Breakdown Voltage 60 Vv Ic = 10 pA, le = 0 BVeso Emitter to Base Breakdown Voltage 5.0 Vv le = 10 pA, Io = 0 : leao Emitter Cutoff Current 10 nA | Vee =3.0V, lc =0 i Icao Collector Cutoff Current 10 nA | Vos = 50 V, te = 01 : 10 pA Vos = 50 V, le = 0, Ta = 150C NOTES: 1. 2. 3. a These ratings are limiting values above which the serviceabifity of any individual semiconductor device may be impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. These ratings give a maximum junction temperature of 175C; function-to-case thermal resistance of 50 C/W (derating factor of 20 mW/ C), and junction-to-ambient thermal resistance of 188 C/W (derating factor of 5.33 wWP? C) for 2N2218; for 2N2221, junction-to-case thermal resistance of 83.5 C/W (derating factor of 12 mW/* C); junction-to-ambient thermal resistance of 300 G/W (derating factor of 333 mW/* C). These ratings give a maximum junction temperature of 150 C, junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/ C): junction-to-ambient thermal resistance of 200 CAW (derating factor of 5.0 mW/ GC) for PN2218 and PN2221; (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/? C). Raling refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length = 300 ys: duty cycle < 2%. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm. (na NO CL CT a 3-236- FAIRCHILD SEMICONDUCTOR ay DEB seei74 coe7si7 3 3469674 FAIRCHILD SEMICONDUCTOR 2N/PN/FTSO2218 2N/PN/FTSO2221 T 84D 27517 Dw 1-23 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS \ hee DC Current Gain (Note 5) 40 120 lc = 150 mA, Vee = 10 V ; 20 Ic = 150 MA, Vee = 1.0 V | 35 Ile = 10 MA, Voce = 10 V : 25 Ic = 1.0 MA, Vee = 10 V 20 le = 0.1 mA, Vee = 10 V 20 le = 500 mA, Voce =10V Veeotsus) | Collector to Emitter Sustaining 30 v lc = 10 mA (pulsed), Ip = 0 Voltage (Note 5) Veetsan Collector to Emitter Saturation 0.4 Vv le = 150 mA, Ip = 50 MA Voltage (Note 5) 1.6 Vv Ic = 500 mA, Ip = 50 mA Vaeisat Base to Emitter Saturation 1.3 Vv le = 150 mA, tls = 15 MA Voltage (Note 5) 2.6 Vv Ic = 500 mA, fs = 50 MA Cob Output Capacitance 8.0 pF Vos = 10V, le =O Nite High Frequency Current Gain 2.5 lo = 20 MA, Vee = 20 V, f = 100 MHz Re(hie) Real Part of Common Emitter 60 2 Ic = 20 MA, Vee = 20 V, f = 300 MHz High Frequency input Impedance 3-237JFAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR Pe FAIRCHILD Pe A Schlumberger Company ay DEG 34ba74 go2751a 5 i 84D 27518 D-= 2N/PN/FTSO2218A 735-7? 2N/PN/FTSO2221A NPN Small Signal General Purpose Amplifiers & Switches Vceo -. 40 V (Min) @ 10 mA Rre .-- 40-120 @ 150 mA fon + Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Tota! Dissipation at 25C Ambient Temperature (Note 7) 25C Case Temperature Total Dissipation at 95C Ambient Temperature 95 G Case Temperature Voltages & Currents Vceo Collector to Emitter Voltage (Note 4) Vcro Collector to Base Voltage Vero Emitter to Base Voltage le Collector Current ELECTRICAL CHARACTERISTICS . 35 ns (Max) @ 150 mA, ton -.- 285 ns (Max) @ 150 mA Complements ... 2N/PN/FTSO2904A Series ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGE 2N2218A TO-39 2N2221A TO-18 PN2218A . TO-92 PN2221A TO-92 FTSO2218A TO-236AA/AB FTSO2221A TO-236AA4/AB 2N PN/FTSO ~65 C to 200C -56C to 150C 175C 150C 2218A 2221A 0.8 W 0.5 W 3.0 W 1.8W PN FTSO 0.625 W 0.350 W" 1.0 W 40V 75V 6.0 V 800 mA (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN {MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown Voltage 40 Vv Ip = 10 mA, lp = 0 (Note 5) BVeso Emitter to Base Breakdown Voltage 6.0 Vv Io = 0, le = 10 pA BVcgo Collector to Base Breakdown Voltage 75 Vv Io =10 pA, Ic = 0 NOTES: 1. These ratings are limiting values above which the serviceability of any indlvidual serniconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3, These ratings give a maximum junction temperature of 175 C, junction-to-case thermal resistance of 50 C/W (derating factor of 20 mW/? Cand junction- to-ambient thermal resistance of 168 C/W (derating factor of 5.33 mW/ C) for 2N2218A. For the 2N2221A, junction-to-case thermal resistance of 83.5 C/W (derating factor of 12 mW C), junction-to-ambient thermal resistance of 300 C/W (derating factor of 3.33 mW/C). These ratings give 4 maximum junction temperature of 150 C, junction-fo-case thermal resistance of 125 G/W (derating factor of 8.0 mW/ CG}; and junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/? C) for PN2218Aand PN2221A. For FTSO2218Aand FTSO2221Ajunction-to-amblent thermal resistance of 357 C/W (derating factor of 2.8 mW/C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length = 300 ps; duty cycle = 1%. For product family characteristic curves, refer to Curve Set 7145. Package mounted on 99.5% alumina 8mm x 8mm x 0.6 mm. i 3-238 FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR DE By 3465674 oo27519 7 T 84D 27519 D = k 2N/PN/FTSO2218A ; 2N/PN/FTSO2221A T_ 45-24 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX j UNITS TEST CONDITIONS Ioex Collector Reverse Current 10 nA Voce = 60 V, Ven = 3.0 V : IcBo Collector Reverse Current 10 nA Vca = 60 V, le = 0 | 10 vA | Vea = 60 V, le = 0, Ts = 150C , lezo Emitter to Base Cutoff Current 10 nA Ves = 3.0 V, le =0 lec Base Current 20 nA Ves = 3.0 V, Vce = 60 V -_ Hre DC Current Gain 20 Ic = = 100 BA, Vor = 10V | 25 lc = 1.0 MA, Vce = 10 V E (Note 5) 35 Io = 10 mA, Voce = 10 V (Note 5) 40 120 lo = 180 mA, Voce = 10 V (Note 5) 26 Ic = 500 MA, Vce = 10 V (Note 5) 15 Io = 10 MA, Vce = 10 V, Ta =-55C (Note 5) 20 Io = 150 mA, Vee = 1.0 V Veesan Collector to Emitter Saturation Voltage 0.3 Vv Ic = 150 mA, lp = 15 MA (Note 5) 1.0 Vv le = 500 mA, ip = 50 MA Vecwan Base to Emitter Saturation Voltage 06 | 1.2 Vv Ic = 150 mA, Is = 15 MA (Note 5) 2.0 Vv Ic = 500 mA, ls = 50 mA Cop Output Capacitance 8.0 pF Ves = 10 V, le = 0, f = 100 kHz Cib Input Capacitance 25 pF Ves = 0.5 V, Ic = 0, f = 100 kHz te High Frequency Current Gain 2.5 lo = 20 mA, Vee = 5.0 V, f = 100 MHz te Small Signal Current Gain 30 150 Io = 1.0 mA, Voa = 10 V, f = 1.0 kHz 50 | 300 lo = 10 MA, Voce = 10 V, f = 1.0 kHz hie input Resistance 1.0 | 3.5 ko Ic = 1.0 MA, Vos = 10V, f = 1.0 kHz 0.2 1.0 ko lo = 10 MA, Ves = 10 V, f = 1.0 KHz Roe Output Conductance 3.0 15 pmho | Io = 1.0 mA, Vee = 10 V, f = 1.0 kHz 10 100 pmho | tc = 10 mA, Vve = 10 V, f = 1.0 kHz Hire Voltage Feedback Ratio 500 x10 | Ic = 1.0 mA, Vow = 10 V, f= 1,0 kHz 250 x106 | lc = 10 mA, Ves = 10 V, f = 1.0 kHz Re (hie) Real Part of Common Emitter 60 0 ic = 20 MA, Vce = 20 V High Frequency Input Impedance f = 300 MHz ta Turn On Delay Time (test circuit no. 231) 10 ns les = 150 MA, Voc = 30 V, Ini =15MA t Rise Time (test circuit no. 231) 25 ns les = 150 MA, Veo = 30V, ler =15MA ts Storage Time (test circuit no. 232) 225 ns = 150 mA, Voc = 30 V, lai = lp2 = 15 MA tr Fall Time (test circuit no. 232) 60 ns les = 150 MA, Veo = 30 V, le: = lpp = 15 MA Ta Active Region Time Constant 2.5 ns le = 150 MA, Vce = 30 V lb Cc Collector to Base Time Constant 150 ps Ip = 20 MA, Vee = 20V, f =31.8 MHz 3-239-FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR FAIRC HILD A Schlumberger Company By DEB 34eab74 0027520 3 , 84D 27520 D 2N2219/PN2219/FTSO2219 2N2222/PN2222/FTSO2222 NPN Small Signal General Purpose Amplifiers & Switches Veso ... 30 V (Min) tre ... 100-300 @ 150 mA, 30 (Min) @ 500 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 Ambient Temperature 25 C Case Temperature Total Dissipation at 25 C Ambient Temperature 25 CG Case Temperature Voltages & Currents Vceo Collector to Emitter Voitage (Note 4) Vceo Collector to Base Voltage Veso Emitter to Base Voltage Ic Collector Current 2N PN/ FTSO -65 C to 200 C-55C to 150C 176C 150 C 2N2219 2N2222 0.8 mW 0.5 w 3.0 W 1.8W PN2219 FTSO 0.625 W 0.350 W* 1.0 W 30 V 60 V 5.0 V 800 mA JT-3S-2%3 | PACKAGE 2N2219 TO-39 2N2222 TO-18 PN2219 TO-92 | PN2222 TO-92 | FTSO2219 TO-236AA/AB FTSO2222 TO-236AA/AB | ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIG MIN | MAX | UNITS TEST CONDITIONS BVcso Collector to Base Breakdown Voltage 60 Vv lo = 10 pA, lz = 0 BVeso Emitter to Base Breakdown Voltage 5.0 Vv le =10 pA, Ile = 0 lego Emitter Cutoff Current 10 nA Ves = 3.0 V, Io = 0 Icgo Collector Cutoff Current 10 nA Vea = 50 V, le = 0 , 10 pA Ves = 50 V, le = 0, Ta = 150C NOTES: 1, These ratings are limiting values above which the serviceabllity of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 175 C; function-to-case thermal resistance of 0 C/W (derating factor of 20 mW/C), and junction-to-ambient thermal resistance of 188 C/W (derating factor of 5.33 wW/ C) for 2N2219; for 2N2222, junction-to-case thermal resistance of 83.5 C/W (derating factor of 12 mW/ C); junction-to-ambient thermal resistance of 300 CAV (derating factor of 3.33 mW/* GC). These ratings give a maximum junction temperature of 150 C, junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/* C); junction-to-ambient thermal resistance of 200 C/AW (derating factor of 5.0 mW/* C) for PN2219 and PN2222; (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 28 mW/ C). eS Rating refers to a high current point where collector to emitter voltage is lowest. Puise conditions: tength = 300 ys; duty cycle < 2%. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm. (rn en a NN a 3-240- FAIRCHILD SEMICONDUCTOR bie ancien BY DEB s4bIb74 Ade7Sed T, 3469674 FAIRCHILD SEMICONDUCTOR 84D 27521 Du 2N2219/PN2219/FTSO2219 2N2222/PN2222/FTSO2222 JT: 38-02 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) t SYMBOL CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS | hee DC Current Gain (Note 5) 400 | 300 Ig = 150 MA, Vee = 10 V . 50 io = 150 MA, Vee = 1.0 V 75 Ic = 10 mA, Vce = 10 V 50 Ic = 0.1 mA, Vce = i0V 35 le = 0.1 MA, Vee = 10 V 30 Io = 500 MA, Voce = 10 V Vecowus) | Collector to Emitter Sustaining 30 V lc = 10 MA (pulsed), la = 0 ~- Voltage (Note 5) a Versa Collector to Emitter Saturation 0.4 v Ic = 150 mA, Ip = 50 MA Voltage (Note 5) 1.6 Vv Ic = 500 mA, Ip = 50 MA Veeisat) Base to Emitter Saturation 13 Vv Ic = 150 MA, Ip = 15 mA Voltage (Note 5) 2.6 Vv Ic = 500 mA, ts = 50 mA Cob Output Capacitance 8.0 pF Vca = 10V, le = 0 Nte High Frequency Current Gain 2.5 Ic = 20 MA, Vor = 20V, f= 100 MHz Re(hie} Real Part of Common Emitter High 60 0 Io = 20 MA, Vee = 20 V, f = 300 MHz Frequency Input Impedance 3-241FAIRCHILD SEMICONDUCTOR . BY DE aubabe4 OoO275ee T 3469674 FAIRCHILD SEMICONDUCTOR 84D 27522 D 2N/PN/FTSO/2219A 2N/PN/FTSO2222A NPN Small Signal General Purpose Amplifiers & Switches 7~35.a3 | a FAIRCHILD ee A Schlumberger Company Vceo -.. 40 V (Min) @ 10 mA PACKAGE hre ... 100-300 (2N/PN/FTSO2219A, 2N/PN/FTSO2222A) 2N2219A TO-39 @ 150 mA 2N2222A TO-39 ton... 35ns (Max) @ 150 mA, tor... 285s (Max) @ 150mA PN2219A TO-92 Complements ... 2N/PN/FTSO2904A Series PN2222A TO-92 FTSO2219A TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) FTSO2222A TO-236AA/AB Temperatures 2N PN/FTSO Storage Temperature -65 C to 200 C -55C to 150C Operating Junction Temperature 175C 150C Power Dissipation (Notes 2 & 3) Total Dissipation at 2N2219A 2N2222A 25C Ambient Temperature (Note 7) 0.8 W 0.5W 25C Case Temperature 3.0 W 1.8W PN FTSO 25C Ambient Temperature 0.625 W 0.350 W* 25C Case Temperature 10W Voltages & Currents Vceo Collector to Emitter Voitage 40 V (Note 4) Veso Collector to Base Voltage 75V Veso Emitter to Base Voltage 6.0V Ic Collector Current 800 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown Voltage | 40 Vv lc = 10 mA, lp =0 (Note 5) BVeeo Emitter to Base Breakdown Voltage 6.0 Vv lo = 0, fe = 10 pA BVceo Collector to Base Breakdown Voltage 75 Vv le = 10 pA, Ic = 0 Icex Collector Reverse Current 10 nA | Vce = 60 V, Ves = 3.0 V NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be Impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 175C, junction-to-case thermal resistance of 50 C/W (derating factor of 20 mW/ C), and junction-to-ambient thermal resistance of 188 C/W (derating factor of 5.33 mW/ C) for 2219A. For the 2N2222A, junction-to-case thermal resistance of 83.5 C/W (derating factor of 12 mW/C), junction-to-ambient thermal resistance of 300 C/W (derating factor of 3.33 mW/ C). These ratings give a maximum junction temperature of 150C, junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/* C); junction-to-ambient thermai resistance of 200 CAV (derating factor of 5.0 mW/ C) for PN2219A, PN2222A. For the FTSO2219A/2222A, these ratings give a maximum junction-to- ambient thermal resistance of 357 CAW (erating factor of 2.8 mW/? C), Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 us; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x & mm x 0.6 mm. (ee Le 3-242 > teeeo ld 3469674 FAIRCHILD SEMICONDUCTOR .FAIRCHILD SEMICONDUCTOR 64 84D 27523 Ds 2N/PN/FTSO2219A 2N/PN/FTSO2222A T-35- 3 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) DE a4 74 0027524 4 T SYMBOL } CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS Icgo Coilector Reverse Current 10 nA | Vos = 60 V, le = 0 10 pA Vos = 60 V, le = 0, Ta = 150C leso Emitter to Base Cutoff Current 10 nA | Ves =3.0V, ic =0 Ist Base Current 20 nA Ves = 3.0 V, Vee = 60 V hee DC Current Gain 35 ig = 100 pA, Vce = 10 V 50 le = 1.0 MA, Vee = 10 V (Note 5) 75 Ip = 10 MA, Vee = 10 V (Note 5) 100 | 300 Ic = 150 MA, Vee = 10 V (Note 5) 40 lc = 500 mA, Vce = 10 V (Note 5) 35 Ie = 10 mA, Voce = 10 V, Ta = 55C (Note 5) 50 Ic = 150 MA, Voce = 1.0 V Veeteat Collector to Emitter Saturation Voltage 0.3 Vv le = 150 mA, Ip = 15 MA (Note 5) 1.0 Vv Ic = 500 mA, ls = 50 mA Veetsan Base to Emitter Saturation Voltage 0.6 1.2 Vv le = 150 mA, lp = 15 mA (Note 5) 2.0 Vv le = 500 mA, Ip = 50 mA Cop Output Capacitance 8.0 pF Vos = 10 V, le = 0, f = 100 kHz Cib Input Capacitance 25 pF Ves = 0.5 V, le = 0, f = 100 kHz Hite High Frequency Current Gain 3.0 tc = 20 mA, Vce = 5.0 V, f = 100 MHz te Small Signal Current Gain 50 | 300 Ic = 1.0 MA, Vos = 10 V, f = 1.0 kHz 75 | 375 lo = 10 mA, Vea = 10 V, f = 1.0 kHz hie Input Resistance 2.0 | 8.0 kX | le =1.0 MA, Ves = 10 V, f = 1.0 kHz 0.25 | 1.25 kO lc = 10 MA, Ves = 10 V, f = 1.0 kHz Ros Output Conductance 5.0 35 pmho | Ic = 1.0 MA, Voce = 10 V, f = 1.0 kHz 25 | 200 pmho | lo = 10 MA, Voce = 10 V, f = 1.0 kHz Nee Voltage Feedback Ratio 800 x108 | Ic = 1.0 mA, Vos = 10 V, f= 1.0 KHz 400 x106 | lc= 10 mA, Vos = 10 V, f = 1.0 kHz Re (hie Real Part of Common Emitter 60 a lc = 20 mA, Vee = 20 V Frequency Input Impedance f = 300 MHz tu Turn On Delay Time (test circuit no. 231 10 ns Ics = 150 mA, Veo = 80 V, lai = 15 MA t Rise Time (test circuit no. 231) 25 ns los = 150 MA, Vcc = 30V, fas =15MA ts Storage Time (test circuit no. 232) 225 ns lcs = 150 MA, Veco = 30 V, la: = leo = 15 MA tr Fall Time (test circuit no. 232) 60 ns les = 150 MA, Vcc = 30 V, le: = Ip2 = 15 MA Ta Active Region Time Constant 2.5 ns le = 150 mA, Vce = 30 V tp Ce Collector to Base Time Constant 150 ps Ic = 20 MA, Voce = 20 V, f=31.8 MHz NF Noise Figure 4.0 dB lc = 100 pA, Vee =10V, Re =1.0k0, BW = 1.0 Hz, f = 1.0 kHz