VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
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Revision: 10-Aug-2018 2Document Number: 94391
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 82 °C, 180° conduction half sine wave 70
A
Maximum continuous RMS on-state
current as AC switch IT(RMS) Lead current limitation 75
Maximum peak, one-cycle
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied
Initial TJ = TJ
maximum
930
10 ms sine pulse, no voltage reapplied 1100
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 4325 A2s
10 ms sine pulse, no voltage reapplied 6115
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 61 150 A2s
Low level value of threshold voltage VT(TO)1
TJ = 125 °C
0.916 V
High level value of threshold voltage VT(TO)2 1.21
Low level value of on-state slope resistance rt1 4.138 m
High level value of on-state slope resistance rt2 3.43
Maximum peak on-state voltage VTM 100 A, TJ = 25 °C 1.4 V
Maximum rate of rise of turned-on current dI/dt TJ = 25 °C 150 A/μs
Maximum holding current IHAnode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C 200
mA
Maximum latching current ILAnode supply = 6 V, resistive load, TJ = 25 °C 400
Maximum reverse and direct leakage current IRRM/IDRM
TJ = 25 °C VR = rated VRRM/VDRM
(TJ = TJ max., linear to 80 %
VDRM = Rg- k = open)
1.0
TJ = 125 °C 15
Maximum rate of rise of off-state voltage dV/dt TJ = 125 °C 500 V/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM T = 30 μs 10 W
Maximum average gate power PG(AV) 2.5
Maximum peak gate current IGM 2.5 A
Maximum peak negative gate voltage - VGM 10
V
Maximum required DC gate voltage to trigger VGT
TJ = - 40 °C
Anode supply = 6 V resistive load
1.8
TJ = 25 °C 1.5
TJ = 125 °C 1.1
Maximum required DC gate current to trigger IGT
TJ = - 40 °C
Anode supply = 6 V resistive load
150
mATJ = 25 °C 100
TJ = 125 °C 80
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = rated value 0.25 V
Maximum DC gate current not to trigger IGD 6mA