BUX81
Document Number 5865
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
VCESM Collector – Emitter Voltage VBE = 0
VCER Collector – Emitter Voltage RBE = 100Ω
VCEO Collector – Emitter Voltage(open base)
ICCollector Current (d.c)
ICM Peak Collector Current tp= 2ms
IBBase Current (d.c)
Ptot Total Power Dissipation Tmb = 50°C
TSTG Storage Temperature Range
TJMaximum Junction Temperature
1000V
500V
450V
10A
15A
4A
150W
-65 to +200°C
+200°C
MECHANICAL DATA
Dimensions in mm (inches)
(0.875)
max.
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Tj= 25°C unless otherwise stated)
TO–204AA (TO–3)
PIN 1 — Base PIN 2 — Emitter Case is Collector.
Applications
The BUX81 is an epitaxial silicon NPN planar transistor that
has high current and high power handling capability and
high switching speed.
This device is especially suitable for switching–control
amplifiers, power gates, switching regulators, power-switch-
ing circuits converters, inverters and control circuits.Other
recommended applications include DC–RF amplifiers and
power oscillators.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.