Semiconductor Group 2 Jul-31-1996
BUP 602D
Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
R
thJC ≤ 0.83 K/W
Diode thermal resistance, chip case
R
thJCD≤ 1.5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
GE =
V
CE,
I
C = 0.5 mA
V
GE(th) 4.5 5.5 6.5 V
Collector-emitter saturation voltage
V
GE = 15 V,
I
C = 20 A,
T
j = 25 °C
V
GE = 15 V,
I
C = 20 A,
T
j = 125 °C
V
GE = 15 V,
I
C = 40 A,
T
j = 25 °C
V
GE = 15 V,
I
C = 40 A,
T
j = 125 °C
V
CE(sat)
-
-
-
-
3.3
3
2.2
2.1
-
-
2.8
2.7
Zero gate voltage collector current
V
CE = 600 V,
V
GE = 0 V,
T
j = 25 °C
I
CES - - 200 µA
Gate-emitter leakage current
V
GE = 25 V,
V
CE = 0 V
I
GES - - 100 nA
AC Characteristics
Transconductance
V
CE = 20 V,
I
C = 20 A
g
fs 4 - - S
Input capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
iss - 1040 1400 pF
Output capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
oss - 115 175
Reverse transfer capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
rss - 66 110