BUP 602D IGBT With Antiparallel Diode Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Including fast free-wheel diode Pin 2 Pin 1 G Pin 3 C E Type VCE IC Package Ordering Code BUP 602D 600V 36A TO-218 AB Q67040-A4229-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 600 V 600 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 36 TC = 90 C 22 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 72 TC = 90 C 40 IF Diode forward current TC = 90 C 31 Pulsed diode current, tp = 1 ms IFpuls TC = 25 C 180 Ptot Power dissipation TC = 25 C W 150 Chip or operating temperature Tj - 55 ... + 150 Storage temperature Tstg - 55 ... + 150 Semiconductor Group Unit 1 C Jul-31-1996 BUP 602D Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values E Unit - 55 / 150 / 56 Thermal Resistance Thermal resistance, chip case RthJC 0.83 Diode thermal resistance, chip case RthJCD 1.5 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.5 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 20 A, Tj = 25 C - 2.1 2.7 VGE = 15 V, IC = 20 A, Tj = 125 C - 2.2 2.8 VGE = 15 V, IC = 40 A, Tj = 25 C - 3 - VGE = 15 V, IC = 40 A, Tj = 125 C - 3.3 - Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 600 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current A - - 200 IGES VGE = 25 V, VCE = 0 V nA - - 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 20 A Input capacitance 4 pF - 1040 1400 - 115 175 - 66 110 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Jul-31-1996 BUP 602D Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 300 V, VGE = 15 V, IC = 20 A RGon = 47 Rise time - 40 60 - 70 110 - 250 330 - 500 680 tr VCC = 300 V, VGE = 15 V, IC = 20 A RGon = 47 Turn-off delay time td(off) VCC = 300 V, VGE = -15 V, IC = 20 A RGoff = 47 Fall time tf VCC = 300 V, VGE = -15 V, IC = 20 A RGoff = 47 Free-Wheel Diode Diode forward voltage VF V IF = 20 A, VGE = 0 V, Tj = 25 C - 1.8 - IF = 20 A, VGE = 0 V, Tj = 125 C - 1.6 - Reverse recovery time trr ns IF = 20 A, VR = -300 V, VGE = 0 V diF/dt = -300 A/s, Tj = 125 C Reverse recovery charge - 110 160 Qrr C IF = 20 A, VR = -300 V, VGE = 0 V diF/dt = -300 A/s Tj = 25 C - 0.6 1.1 Tj = 125 C - 1.3 2.4 Semiconductor Group 3 Jul-31-1996 BUP 602D Power dissipation Ptot = (TC) parameter: Tj 150 C Ptot Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 160 36 W A IC 120 28 24 100 20 80 16 60 12 40 8 20 0 0 4 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 C TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 160 TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 tp = 17.0s A K/W IC ZthJC 100 s 10 1 10 -1 D = 0.50 1 ms 0.20 10 0 10 -2 0.10 0.05 10 ms 0.02 single pulse 0.01 DC 10 -1 0 10 10 1 10 2 V 10 10 -3 -5 10 3 VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Jul-31-1996 BUP 602D Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 40 A IC 30 40 A 17V 15V 13V 11V 9V 7V IC 30 25 25 20 20 15 15 10 10 5 5 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 40 A IC 30 25 20 15 10 5 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Jul-31-1996 BUP 602D Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 47 par.: VCE = 300 V, VGE = 15 V, IC = 20 A 10 3 10 3 tf t tf t ns ns tdoff tdoff tr tr 10 2 10 2 tdon tdon 10 1 0 5 10 15 20 25 30 35 40 A IC 10 1 0 50 20 40 60 80 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 47 E = f (RG) , inductive load , Tj = 125C 120 RG par.: VCE = 300V, VGE = 15 V, IC = 20 A 3.0 3.0 Eoff mWs mWs E E 2.0 2.0 Eon Eoff 1.5 1.5 1.0 1.0 0.5 Eon 0.5 0.0 0.0 0 5 10 15 20 25 30 35 40 A 50 0 IC Semiconductor Group 6 20 40 60 80 120 RG Jul-31-1996 BUP 602D Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 20 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 C 100 V 14 300 V 10 0 Ciss 10 -1 Coss 12 10 8 6 Crss 4 2 0 0 10 20 30 40 50 60 70 nC 90 10 -2 0 5 10 15 20 25 30 QGate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 50 nH ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 10 V 40 VCE 2.5 ICsc/IC(90C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0.0 0 100 200 Semiconductor Group 300 400 500 600 V 800 VCE 7 0 100 200 300 400 500 600 V 800 VCE Jul-31-1996 BUP 602D Typ. forward characteristics Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IF = f (VF) parameter: Tj Diode 10 1 40 K/W A IF ZthJC 30 25 Tj=125C 10 0 10 -1 Tj=25C 20 D = 0.50 10 -2 0.20 15 0.10 0.05 10 10 -3 0.02 single pulse 0.01 5 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF Semiconductor Group 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Jul-31-1996 BUP 602D Package Outlines Dimensions in mm Weight: Semiconductor Group 9 Jul-31-1996