5
C0G (NP0) Dielectric
Specications and Test Methods
051818 5
Parameter/Test NP0 Specication Limits Measuring Conditions
Operating Temperature Range -55ºC to +125ºC Temperature Cycle Chamber
Capacitance Within specied tolerance Freq.: 1.0 MHz ± 10% for cap ≤ 1000 pF
1.0 kHz ± 10% for cap > 1000 pF
Voltage: 1.0Vrms ± .2V
Q<30 pF: Q≥ 400+20 x Cap Value
≥30 pF: Q≥ 1000
Insulation Resistance 100,000MΩ or 1000MΩ - µF,
whichever is less
Charge device with rated voltage for
60 ± 5 secs @ room temp/humidity
Dielectric Strength No breakdown or visual defects Charge device with 250% of rated voltage for
1-5 seconds, w/charge and discharge current
limited to 50 mA (max)
Note: Charge device with 150% of rated
voltage for 500V devices.
Resistance to
Flexure
Stresses
Appearance No defects Deection: 2mm
Test Time: 30 seconds
Capacitance
Variation
±5% or ±.5 pF, whichever is greater
QMeets Initial Values (As Above)
Insulation
Resistance
≥ Initial Value x 0.3
Solderability ≥ 95% of each terminal should be covered
with fresh solder
Dip device in eutectic solder at 230 ± 5ºC
for 5.0 ± 0.5 seconds
Resistance to
Solder Heat
Appearance No defects, <25% leaching of either end terminal
Dip device in eutectic solder at 260ºC for 60sec-
onds. Store at room temperature for 24 ± 2hours
before measuring electrical properties.
Capacitance
Variation
≤ ±2.5% or ±.25 pF, whichever is greater
QMeets Initial Values (As Above)
Insulation
Resistance
Meets Initial Values (As Above)
Dielectric
Strength
Meets Initial Values (As Above)
Thermal
Shock
Appearance No visual defects Step 1: -55ºC ± 2º 30 ± 3 minutes
Capacitance
Variation
≤ ±2.5% or ±.25 pF, whichever is greater Step 2: Room Temp ≤ 3 minutes
QMeets Initial Values (As Above) Step 3: +125ºC ± 2º 30 ± 3 minutes
Insulation
Resistance
Meets Initial Values (As Above) Step 4: Room Temp ≤ 3 minutes
Dielectric
Strength
Meets Initial Values (As Above) Repeat for 5 cycles and measure after
24 hours at room temperature
Load Life
Appearance No visual defects
Charge device with twice rated voltage in
test chamber set at 125ºC ± 2ºC
for 1000 hours (+48, -0).
Remove from test chamber and stabilize at
room temperature for 24 hours
before measuring.
Capacitance
Variation
≤ ±3.0% or ± .3 pF, whichever is greater
Q
(C=Nominal Cap)
≥ 30 pF: Q≥ 350
≥10 pF, <30 pF: Q≥ 275 +5C/2
<10 pF: Q≥ 200 +10C
Insulation
Resistance
≥ Initial Value x 0.3 (See Above)
Dielectric
Strength
Meets Initial Values (As Above)
Load
Humidity
Appearance No visual defects
Store in a test chamber set at 85ºC ± 2ºC/
85% ± 5% relative humidity for 1000 hours
(+48, -0) with rated voltage applied.
Remove from chamber and stabilize at room
temperature for 24 ± 2 hours before measuring.
Capacitance
Variation
≤ ±5.0% or ± .5 pF, whichever is greater
Q
≥ 30 pF: Q≥ 350
≥10 pF, <30 pF: Q≥ 275 +5C/2
<10 pF: Q≥ 200 +10C
Insulation
Resistance
≥ Initial Value x 0.3 (See Above)
Dielectric
Strength
Meets Initial Values (As Above)
100917 5
C0G (NP0) Dielectric
Specifications and Test Methods
Parameter/Test NP0 Specification Limits Measuring Conditions
Operating Temperature Range -55ºC to +125ºC Temperature Cycle Chamber
Capacitance Within specified tolerance Freq.: 1.0 MHz ± 10% for cap ≤ 1000 pF
Q<30 pF: Q≥ 400+20 x Cap Value 1.0 kHz ± 10% for cap > 1000 pF
≥30 pF: Q≥ 1000 Voltage: 1.0Vrms ± .2V
Insulation Resistance 100,000MΩ or 1000MΩ - µF, Charge device with rated voltage for
whichever is less 60 ± 5 secs @ room temp/humidity
Charge device with 250% of rated voltage for
Dielectric Strength No breakdown or visual defects 1-5 seconds, w/charge and discharge current
limited to 50 mA (max)
Note: Charge device with 150% of rated
voltage for 500V devices.
Appearance No defects Deflection: 2mm
Capacitance Test Time: 30 seconds
Resistance to Variation ±5% or ±.5 pF, whichever is greater
Flexure Q Meets Initial Values (As Above)
Stresses
Insulation ≥ Initial Value x 0.3
Resistance
Solderability ≥ 95% of each terminal should be covered Dip device in eutectic solder at 230 ± 5ºC
with fresh solder for 5.0 ± 0.5 seconds
Appearance No defects, <25% leaching of either end terminal
Capacitance
Variation ≤ ±2.5% or ±.25 pF, whichever is greater
Dip device in eutectic solder at 260ºC for 60
Q Meets Initial Values (As Above) seconds. Store at room temperature for 24 ± 2
Resistance to
hours before measuring electrical properties.
Solder Heat Insulation Meets Initial Values (As Above)
Resistance
Dielectric Meets Initial Values (As Above)
Strength
Appearance No visual defects Step 1: -55ºC ± 2º 30 ± 3 minutes
Capacitance
Variation ≤ ±2.5% or ±.25 pF, whichever is greater Step 2: Room Temp ≤ 3 minutes
Q Meets Initial Values (As Above) Step 3: +125ºC ± 2º 30 ± 3 minutes
Thermal
Shock Insulation Meets Initial Values (As Above) Step 4: Room Temp ≤ 3 minutes
Resistance
Dielectric Meets Initial Values (As Above) Repeat for 5 cycles and measure after
Strength 24 hours at room temperature
Appearance No visual defects
Capacitance
Variation ≤ ±3.0% or ± .3 pF, whichever is greater Charge device with twice rated voltage in
≥ 30 pF: Q≥ 350 test chamber set at 125ºC ± 2ºC
Load Life Q≥10 pF, <30 pF: Q≥ 275 +5C/2 for 1000 hours (+48, -0).
(C=Nominal Cap) <10 pF: Q≥ 200 +10C
Insulation ≥ Initial Value x 0.3 (See Above) Remove from test chamber and stabilize at
Resistance room temperature for 24 hours
Dielectric Meets Initial Values (As Above) before measuring.
Strength
Appearance No visual defects
Capacitance
Variation ≤ ±5.0% or ± .5 pF, whichever is greater Store in a test chamber set at 85ºC ± 2ºC/
≥ 30 pF: Q≥ 350 85% ± 5% relative humidity for 1000 hours
Load Q ≥10 pF, <30 pF: Q≥ 275 +5C/2 (+48, -0) with rated voltage applied.
Humidity <10 pF: Q≥ 200 +10C
Insulation ≥ Initial Value x 0.3 (See Above) Remove from chamber and stabilize at
Resistance room temperature for 24 ± 2 hours
Dielectric Meets Initial Values (As Above) before measuring.
Strength