2SK3679-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Ratings Unit V 900 V 900 Equivalent A Continuous drain current 9 A Pulsed drain current 36 V Gate-source voltage 30 A Repetitive or non-repetitive 9 mJ Maximum Avalanche Energy 287.7 kV/s Maximum Drain-Source dV/dt 40 Peak Diode Recovery dV/dt 5 kV/s Gate(G) Max. power dissipation 2.16 W 95 Operating and storage Tch +150 C -55 to +150 temperature range Tstg C Isolation Voltage VISO *6 2 kVrms *1 L=6.51mH, Vcc=90V, Tch=25C See to Avalanche Energy Graph *2 Tch < =150C *3 IF < = BVDSS, Tch < = 150C *4 VDS<= 900V *5 VGS=-30V *6 t=60sec, f=60Hz = -ID, -di/dt=50A/s, Vcc < circuit schematic Drain(D) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=900V VGS=0V Tch=25C VDS=720V VGS=0V Tch=125C VGS=30V VDS=0V ID=4.5A VGS=10V ID=4.5A VDS=25V Min. 5 VDS =25V VGS=0V f=1MHz VCC=600V ID=4.5A VGS=10V RGS=10 V CC=450V ID=9A VGS=10V L=6.51mH Tch=25C IF=9A VGS=0V Tch=25C IF=9A VGS=0V -di/dt=100A/s Tch=25C Typ. 900 3.0 Max. 5.0 25 250 100 1.58 1.22 10 1100 1650 140 210 8 12 25 38 12 18 50 75 12 18 31 46.5 4.5 8 11 16.5 9 0.90 3.2 15.5 1.50 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.316 58.0 Units C/W C/W 1 2SK3679-01MR FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) 150 14 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 20V 10V 8.0V 7.0V 12 125 6.5V 10 ID [A] PD [W] 100 75 8 6 6.0V 50 4 25 VGS=5.5V 2 0 0 0 25 50 75 100 125 0 150 5 10 15 20 VDS [V] Tc [C] Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 10 1 VGS[V] 1.7 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=5.5V 10 ID [A] 5 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V 6.0V 6.5V 7.0V 8.0V 10V 4 20V 1.5 RDS(on) [ ] RDS(on) [ ] 1.6 1.4 3 max. 2 1.3 typ. 1 1.2 1.1 0 0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3679-01MR FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A 7.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=9A,Tch=25C 6.5 12 6.0 5.5 max. Vcc= 180V 450V 720V 10 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 3.0 min. 8 6 2.5 4 2.0 1.5 2 1.0 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 5 10 15 10 1 10 0 10 20 25 30 35 40 45 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 10 Ciss -1 Coss IF [A] C [nF] Tch [C] 1 10 -2 Crss 10 -3 10 0 10 1 10 0.1 0.00 2 0.25 0.50 VDS [V] 10 3 0.75 1.00 1.25 1.50 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 700 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V IAS=4A 600 tf 500 10 2 IAS=6A t [ns] EAS [mJ] td(off) td(on) 10 400 IAS=9A 300 1 200 tr 100 10 0 10 0 -1 10 0 10 1 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 2SK3679-01MR Avalanche Current I AV [A] 10 2 10 1 10 0 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=90V Single Pulse -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4