CONDITIONING SEMICOND DVC _ Jf 2323489 oooo1e 2 Fast Switching Silicon, Single Sees Bridge Rectifiers ' Up to 800 Volts Up to 35 Amps_ FEATURES: Soft recovery characteristics Stable performance characteristics due to the incorporation of glassivated power diode chips * Industry standard packaging Electrically isolated active components and Serminals with a maximum high-pot test voltage of 2500 volts RMS Avalanche types available * Available in Doubler, Positive/Negative caritertap configurations TAX All devices described on this data sheet are recognized by Underwriters Laboratories - under their component recognition program MECHANICAL DATA/OUTLINE DIMENSIONS In INCHES (MILLIMETERS) OUTLINE ONE 3,6, & 10 AMPERE . OUTLINE TWO 15, 25, & 35 AMPERE & - NOTES NOTES 4 Fotarity | Is identified with positive output terminals as noted. t 1] 5300/3amp Series marked on her markings are on sides of de I z bottom side only 2] eDe-notee Case Temperature Mossurewent Point <5 2} dc600/6amp & dc100/10amp Seres - I A] BEE | Ea 7 bwcpestns cotut termina -6= - x + 29 for these series Ison sides ot = + 8.8} ol % ices. 1.125 aod TP 3ay* Dernotes case temperalure measurement a { . MAX ~~ A + 8 pont. Pp nn ome ond 108; _ ve _ 0.260 . Cog.4_ oo4Diaixa SIDE VIEW @ This] PII M0130 . x4) THRU - gl@ e+ one -|.. \ 3 MQUNTING 425 .oolro > @ -[g tax 015K oo I _ -leo el 2] wounnne Hove cralane Wor wex | SIDE VIEW ; > (10.2) os2 Max view 0.21 MAX (28.6 1.00 MAX (168) ; . (25.4) RATING CURVES OUTPUT CURRENT DE-RATING SCHEDULE FORWARD SURGE CURRENT SCHEDULE 100 10 K Percent of = Percent of - 55C Output Single Cycle Cc t Surge $0 Pa i] Rating Current Rating i % \ % . | 2 *s 60 * 100 1s 0 - 6 4 & WO m0 . Ambient Gase Temperature Number Cycles at 60/60 Hertz2 : @ CONDITIONING | SEMICOND DvC st ae RATINGS & CHARACTERISTICS 4h 23-05 50/60 hertz inductive/resistive load 7~ 23- -07- DE 2323484 OO00113 4 Type Maximum | Maximum Maximum Typical | Maximum Maximum Maximum Maximum { Outline No. Working RMS Average Combined] Single Peak D.C. Reverse Ref. Peak Input Output Junction. Cucle Forward Reverse Recovery No, Reverse Voltage Current to Surge Voltage Current Time Voltage @ Case Current @ Ir trr Vam(wkg) Thermal Tco=25C @ @ & Resistance VR Ta= VR Ta= Tc= fc Tos & Tc= 25C 55C | 55C 25C [125C V/ 2/ 3/ 4/ 2/ 2/ 2/ 2/ 2/ Nano- Volts Volts Amps | Amps C/Watt Amps | Amps | Volts | Amps | Amps Sec dc30005F 50 35 2.0 3.0 12.0 40 2.0 1.4 .0 | 250 200 1 dc301F 100 70 2.0 3.0 12.0 40 2.0 1.4 5.0 | 250 200 1 dc302F 200 140 2.0 3.0 12.0 40 2.0 1.4 5.0 | 250 200 1 dc304F 400 280 2.0 3.0 12.0 40 2.0 1.4 5.0 | 250 200 1 dc306F 600 420 2.0 3.0 12.0 40 2.0 1.4 | 5.0 | 250 250 1 dc308F 800 560 2.0 3.0 12.0 40 2.0 | 1.4 | 5.0 | 250 250 1 dc6005F 50 35 3.0 5.0 8.0 110 5.0 1.4 | 5.0 | 350 200 1 dc601F 100 70 3.0 5.0 8.0 110 5.0 1.4 | 5.0 | 350 200 1 dc602F 200 140 3.0 5.0 8.0 110 5.0 1.4 | 5.0 | 350 200 1 dc604F 400 280 3,0 5.0 8.0 110 5.0 1.4 | 5.0 | 350 200 1 dc606F 600 420 3.0 5,0 8.0 110 5.0 1.4 | 5.0 | 350 250 1 dc608F 800 560 3.0 5.0 8.0 110 5.0 | 1.4 5.0 | 350 250 1 dc1005F 50 35 3.0 10.0 3.0 200 10.01 1.5 | 5.0 | 450 200 1 dc101F 100 70 3.0 10.0 3,0 200 10.0 | 1.5 5.0 | 450 200 1 dc102F 200 140 3,0 10.0 3.0 200 10.0 | 1.5 5.0 | 450 200 1 dci04F 400 280 3.0 10.0 3.0 200 10.0 | 1.5 5.0 | 450 200 1 dct06F 600 420 3.0 * 10.0 3.0 200 10.0 | 1.5 5.0 | 450 250 1 dco108F 800 560 3.0 10.0 3.0 200 10.0 | 1.5 5.0 | 450 250 1 CSB1505F 50 35 3.5 15.0 1.4 200 15.0 | 1.6 | 10.0] 500 200 2 CSB151F 100 70 3.5 15.0 1.4 200 15.01 1.6 | 10.0 | 500 200 2 CSB152F 200 140 3.5 15.0 1.4 200 | 150] 1.6 | 10.0} 500] 200 2 CSB154F 400 280 3.5 15.0 1.4 200 15.01 1.6 | 10.0] 500 200 2 CSB156F 600 420 3.5 15.0 1.4 200 15.0] 1.6 | 10.0] 500 250 2 CSB158F 800 560 3.5 15.0 1.4 200 -T5.0 | 1.6 | 10.0 | 500 250 2 CSB2505F 50 35 5.0 25.0 1.3 300 25.0} 1.6 | 10.0} 500; 200 2 CSB251F 100 70 5.0 25.0 1.3 300 25.0] 1.6 |} 10.0 | 500 200 2 CSB252F 200 140 5.0 25.0 1.3 300 25.0} 1.6 | 10.0 | 500 200 2 CSB254F 400 280 5.0 25.0 1.3 300 26.0} 1.6 | 10.0 | 500 200 2 CSB256F 600 420 5.0 25.0 1.3 300 25.0} 1.6 | 10.0 | 500 250 2 CSB258F 800 560 5.0 25.0 1.3 300 25.0} 1.6 | 10.0 | 500 250 2 CSB3505F 50 35 6.0 35.0 1.2 350 35.0 | 1.7 | 10.0 | 500 200 2 CSB351F 100 70 6.0 35.0 1.2 350 35.0 | 1.7 | 10.0 | 500 200 2 CSB352F 200 140 6.0 35.0 1.2 350 35.0 | 1.7 | 10.0 | 500 200 2 CSB354F 400 280 6.0 35.0 1.2 350 35.0 | 1.7 | 10.0 } 500 200 2 CSB356F 600 420 6.0 35.0 1.2 350 35.0} 1.7 | 10.0 | 500 250 2 CSB358F 800 560 6.0 35.0 1.2 350 35.0 | 1.7 | 10.0 | 500 250 2 NOTES: 1/ Operational temperature: -55 C to 185 C Storage temperature: -55 C to 150 CG 2/ Per rectifier element 3/ Terminal mounted onfyno heat sinking 4/ Base mounted onto heat sinking surface / Recovery. test conditions are (per MIL-S-19500/286C): 1FM = O.SApk: IRr = 1.0Apk: Recover to 0.254 DISTRIBUTED/REPRESENTED BY: CONDITIONING SEMICONDUCTOR DEVICES CORPORATION CN Ridge Road, Frankford Township Post Office Box 2098 Branchville, New Jersey 07826 Telephone; (201) 948-3900 Telex: 219023/CSDC UR