AUIRF6215S
2 2015-11-13
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by TJmax, starting TJ = 25°C, L = 14mH, RG = 25, IAS = -6.6A. (See fig.12)
ISD -6.6A, di/dt 620A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
R is measured at TJ of approximately 90°C
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.29 VGS = -10V, ID = -6.6A
––– ––– 0.58 VGS = -10V, ID = -6.6A,TJ =150°C
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Trans conductance 3.6 ––– ––– S VDS = -25V, ID = -6.6A
IDSS Drain-to-Source Leakage Current ––– ––– -25 µA VDS = -150V, VGS = 0V
––– ––– -250 VDS = -120V,VGS = 0V,TJ =150°C
IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– ––– 66
nC
ID = -6.6A
Qgs Gate-to-Source Charge ––– ––– 8.1 VDS = -120V
Qgd Gate-to-Drain Charge ––– ––– 35 VGS = -10V
td(on) Turn-On Delay Time ––– 14 –––
ns
VDD = -75V
tr Rise Time ––– 36 ––– ID = -6.6A
td(off) Turn-Off Delay Time ––– 53 ––– RG= 6.8
tf Fall Time ––– 37 ––– RD= 12
LS Internal Source Inductance ––– 7.5 ––– nH
Between lead,6mm (0.25in.)
from package and center
of die contact
Ciss Input Capacitance ––– 860 –––
pF
VGS = 0V
Coss Output Capacitance ––– 220 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– -11
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– -44 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C,IS = -6.6A,VGS = 0V
trr Reverse Recovery Time ––– 160 240 ns TJ = 25°C ,IF = -6.6A
Qrr Reverse Recovery Charge ––– 1.2 1.7 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)